Spin-polarized electron transport in diluted magnetic semiconductors (DMS) in the paramagnetic phase is described within the thermoballistic transport model. In this (semiclassical) model, the ballistic and diffusive transport mechanisms are unified in terms of a thermoballistic current in which electrons move ballistically across intervals enclosed between arbitrarily distributed points of local thermal equilibrium. The contribution of each interval to the current is governed by the momentum relaxation length. Spin relaxation is assumed to take place during the ballistic electron motion. In paramagnetic DMS exposed to an external magnetic field, the conduction band is spin-split due to the giant Zeeman effect. In order to deal with this situation, we extend our previous formulation of thermoballistic spin-polarized transport so as to take into account an arbitrary (position-dependent) spin splitting of the conduction band. The current and density spin polarizations as well as the magnetoresistance are each obtained as the sum of an equilibrium term determined by the spin-relaxed chemical potential, and an off-equilibrium contribution expressed in terms of a spin transport function that is related to the splitting of the spin-resolved chemical potentials. The procedures for the calculation of the spin-relaxed chemical potential and of the spin transport function are outlined. As an illustrative example, we apply the thermoballistic description to spin-polarized transport in DMS/NMS/DMS heterostructures formed of a nonmagnetic semiconducting sample (NMS) sandwiched between two DMS layers. We evaluate the current spin polarization and the magnetoresistance for this case and, in the limit of small momentum relaxation length, find our results to agree with those of the standard drift-diffusion approch to electron transport.
We propose paramagnetic semiconductors as active media for refrigeration at cryogenic temperatures by adiabatic demagnetization. The paramagnetism of impurity dopants or structural defects can provide the entropy necessary for refrigeration at cryogenic temperatures. We present a simple model for the theoretical limitations to specific entropy and cooling power achievable by demagnetization of various semiconductor systems. Performance comparable to that of the hydrate (CMN) is predicted.
We study the mutual coupling of spin fluctuations and lattice vibrations in paramagnetic CrN by combining atomistic spin dynamics and ab initio molecular dynamics. The two degrees of freedom are dynamically coupled leading to non-adiabatic effects. Those effects suppress the phonon life times at low temperature compared to an adiabatic approach. The here identified dynamic coupling provides an explanation for the experimentally observed unexpected temperature dependence of the thermal conductivity of magnetic semiconductors above the magnetic ordering temperature.
Gallium oxide (b-Ga2O3) is a wide-bandgap compound semiconductor with a bandgap of ~ 4.9 eV that is currently considered promising for a wide range of applications ranging from transparent conducting electrodes to UV optoelectronic devices and power electronics. However, all of these applications require a reliable and precise control of electrical and optical properties of the material, which can be largely affected by impurities, such as transition metals commonly present during the growth. In this work we employ electron paramagnetic resonance (EPR) spectroscopy to obtain EPR signatures of …
We report on study of magnetic impurities spin relaxation in diluted magnetic semiconductors above Curie temperature. Systems with a high concentration of magnetic impurities where magnetic correlations take place were studied. The developed theory assumes that main channel of spin relaxation is mobile carriers providing indirect interactions between magnetic impurities. Our theoretical model is supported by experimental measurements of manganese spin relaxation time in GaMnAs by means of spin-flip Raman scattering. It is found that with temperature increase spin relaxation rate of ferromagnet…
EPR and ferromagnetism in diluted magnetic semiconductor quantum wells
受调制掺杂的CdMnTe量子阱中的电子顺磁共振（EPR）谱的最新测量的启发，[F. J. Teran { \it et al.}，物理修订信函{ \bf 91}，077201（2003）]，我们发展了准二维稀磁半导体（DMS）中集体自旋激发的理论。我们的理论解释了在这些实验中发现的Mn离子的局部矩和巡回电子自旋之间的集体耦合的结果的巨大的奈特位移。我们用这个理论来讨论（II，Mn）VI量子阱中的铁磁性的物理，并推测它可能在n型调制掺杂系统中观察到的温度。
Indication of antiferromagnetic interaction between paramagnetic Co ions in the diluted magnetic semiconductor Zn$_{1-x}$Co$_{x}$O
采用X射线磁性圆二色性（XMCD）技术研究了ZnO（0001）衬底上不同氧分压下同质外延生长的Zn $_{1-x}$ Co $_x$ O（$x=0.07$和0.10）薄膜在Co $2p$芯能级吸收边的磁性.吸收光谱的线形在所有的膜中是相同的，并且表明Co $^{2+}$离子取代了Zn位点。的磁场和温度的XMCD强度的依赖性是一致的磁化强度测量，表明除了钴有没有额外的来源的磁矩，并证明在同质外延Zn $_{1-x}$ Co $_{x}$ O薄膜的顺磁和铁磁成分的共存，相反，在异质外延Zn $_{1-x}$ Co $_{x}$ O薄膜的铁磁性先前研究。利用Curie-Weiss定律对XMCD的强度进行了分析，发现顺磁性Co离子之间存在反铁磁相互作用。缺失的XMCD强度和磁化强度信号表明，大多数的Co离子是非磁性的，可能是因为它们是强耦合的反铁磁彼此。在高真空中退火降低了顺磁和铁磁信号。我们将还原归因于Zn $_{1-x}$ Co $_{x}$ O中Co离子与反铁磁纳米团簇的热扩散和聚集。
Organic semiconductors find increasing importance in spin transport devices due to the modulation and control of their properties through chemical synthetic versatility. The organic materials are used as interlayers between two ferromagnet (FM) electrodes in organic spin valves (OSV), as well as for magnetic spin manipulation of metal-organic complexes at the molecular level. In the latter, specifically, the substrate-induced magnetic switching in a paramagnetic molecule has been evoked extensively, but studied by delicate surface spectroscopies. Here we present evidence of the substantial mag…
We uncovered for the first time the spin dynamics involved in the birth and growth of giant spin polarons in a magnetic semiconductor. For this purpose, we developed a new measurement technique, which for the first time provides direct access to the spin dynamics, irrespective of phonons and carriers involved in the process. Moreover, we solved for the first time the Landau-Liftshitz equation in the specific scenario of spin polarons, which fits our data excellently, and demonstrates for the first time that the spin polaron growth slows down dramatically when the sample is cooled in the parama…
We report the systematic studies of spin current transport and relaxation mechanism in highly doped organic polymer film. In this study, we have determined spin diffusion length (SDL), spin lifetime, and spin diffusion constant by using different experimental techniques. The spin lifetime estimated from the electron paramagnetic resonance experiment is much shorter than the previous expectation beyond the experimental ambiguity. This suggests that significantly large spin diffusion constant, which is reasonably explained by the hopping transport mechanism in degenerate semiconductors, exists i…
The unique properties of organic semiconductors make them versatile base materials for many applications ranging from light emitting diodes to transistors. The low spin-orbit coupling typical for carbon-based materials and the resulting long spin lifetimes give rise to a large influence of the electron spin on charge transport which can be exploited in spintronic devices or to improve solar cell efficiencies. Magnetic resonance techniques are particularly helpful to elucidate the microscopic structure of paramagnetic states in semiconductors as well as the transport processes they are involved…
We have experimentally tested the hypothesis of free charge carrier mediated spin-transport in the small molecule organic semiconductor Alq3 at room temperature. A spin current was pumped into this material by pulsed ferromagnetic resonance of an adjacent NiFe layer, while a charge current resulting from this spin current via the inverse spin-Hall effect (ISHE) was detected in a Pt layer adjacent on the other side of the Alq3 layer, confirming a pure spin current through the Alq3 layer. Charge carrier spin states in Alq3, were then randomized by simultaneous application of electron paramagneti…
A temperature-dependent approach involving Green-Kubo equilibrium atomic and spin dynamics (GKEASD) is reported to assess phonon and magnon thermal transport processes accounting for phonon-magnon interactions. Using body-center cubic (BCC) iron as a case study, GKEASD successfully reproduces its characteristic temperature-dependent spiral and lattice thermal conductivities. The non-electronic thermal conductivity, i.e., the sum of phonon and magnon thermal conductivities, calculated using GKEASD for BCC Fe agrees well with experimental measurements. Spectral energy analysis reveals that high-…
F+ center, an electron trapped at oxygen vacancy (VO), was investigated in the oxygen deficient Y3Al5O12 (YAG) crystals by EPR. The measurements were performed at temperatures 5-450 K and frequencies 9.4-350 GHz with using both the continue wave and pulse EPR technique. The pulse electron-nuclear double resonance was applied to resolve the hyperfine interaction of the trapped electron with surrounding nuclei. The measurements show that at low temperatures, T < 50 K, EPR spectrum of the F+ center is anisotropic with g factors in the range 1.999-1.988 and originates from three magnetically inequ…
We report on a method by which we can systematically extract spectroscopic information such as isotropic electron-nuclear hyperfine coupling constants from near-zero field magnetoresistance spectra. The method utilizes a least squares fitting of models developed from the stochastic quantum Liouville equation. We applied our fitting algorithm to two distinct material systems: Si/SiO2 MOSFETs, and a-Si:H MIS capacitors. Our fitted results and hyperfine parameters are in reasonable agreement with existing knowledge of the defects present in the systems. Our work indicates that the NZFMR response …
Theoretical study of nitrogen-vacancy spin coherence enhanced by vacancy aggregation in diamond using cluster-correlation expansion
University of Tsukuba（筑波大学）；Institute of Pure and Applied Sciences（纯理与应用科学研究院）；Japanese-French Laboratory for Semiconductor Physics and Technology J-FAST（日法半导体物理与技术实验室（J-FAST））；CNRS（法国国家科学研究中心）；University Grenoble Alpes（格勒诺布尔阿尔卑斯大学）；Grenoble INP（格勒诺布尔国立理工学院）
Developing the field of quantum information science (QIS) hinges upon designing viable qubits, the smallest unit in quantum computing. One approach to creating qubits is introducing paramagnetic defects into semiconductors or insulators. This class of qubits has seen success in the form of nitrogen-vacancy centers in diamond, divacancy defects in SiC, and P doped into Si. These materials feature paramagnetic defects in a low nuclear spin environment to reduce the impact of nuclear spin on electronic spin coherence. In this work, we report single crystal growth of Ba$_2$CaWO$_{6-δ}$, and the co…
Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/paramagnet interface are a candidate spintronic technology for a new generation of electrically-controlled magnetic memory devices. Phenomenologically, the torques have field-like and antidamping-like components with distinct symmetries. Microscopically, they are considered to have two possible origins. In one picture, a spin-current generated in the paramagnet via the relativistic spin Hall effect (SHE) is absorbed in the ferromagnet and induces the spin transfer torque (STT). In the other picture, a n…
This article reviews the principles that govern the combined transport of spin, heat, and charge. The extensive thermodynamic quantity associated with spin transport is the magnetization; its Onsager-conjugate force is in general the derivative of the free energy with respect to the magnetization. Spins are carried in one of two ways: (1) by spin-polarized free electrons in magnetic metals and doped semiconductors, or (2) by spin waves (magnons) that reside on localized electrons on unfilled d- or f-shells of transition metal or rare-earth elements. The paper covers both cases in separate chap…
Triplet excited states in organic semiconductor materials and devices are notoriously difficult to detect and study with established spectroscopic methods. Yet, they are a crucial intermediate step in next-generation organic light emitting diodes (OLED) that employ thermally activated delayed fluorescence (TADF) to upconvert non-emissive triplets to emissive singlet states. In organic photovoltaic (OPV) devices, however, triplets are an efficiency-limiting exciton loss channel and are also involved in device degradation. Here, we introduce an innovative spin-sensitive method to study triplet s…
