arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0809.2212cond-mat.str-el
收藏

锰氧化物中的取代无序和电荷局域化

Substitutional disorder and charge localization in manganites

Eduardo V. Castro, J. M. B. Lopes dos Santos

摘要:

在锰氧化物$RE_{1-x}AE_{x}$ MnO $_{3}$($RE$和$AE$分别是稀土和碱土元素)中,$RE^{3+}$和$AE^{2+}$的随机分布引起Mn位中载流子的位能的随机但相关的位移。我们考虑一个现实的模型,这种对角无序,除了双交换跳跃的障碍,并调查作为温度的函数的金属-绝缘体的过渡,跨顺磁性-铁磁性线,并作为掺杂$x$的函数。与以前的结果相反,我们发现,参数的值,估计从锰氧化物的电子结构,是不兼容的可能性的无序诱导的金属到绝缘体的过渡伴随着铁磁到顺磁过渡在中间掺杂($x\sim0.2-0.4$)。这些研究结果清楚地表明,取代无序被认为是一个重要的影响时,解决锰氧化物的巨磁电阻性能。

英文摘要:

In the manganites $RE_{1-x}AE_{x}$MnO$_{3}$ ($RE$ and $AE$ being rare-earth and alkaline-earth elements, respectively) the random distribution of $RE^{3+}$ and $AE^{2+}$ induces random, but correlated, shifts of site energies of charge carriers in the Mn sites. We consider a realistic model of this diagonal disorder, in addition to the double-exchange hopping disorder, and investigate the metal-insulator transition as a function of temperature, across the paramagnetic-ferromagnetic line, and as a function of doping $x$. Contrary to previous results, we find that values of parameters, estimated from the electronic structure of the manganites, are not incompatible with the possibility of a disorder induced metal to insulator transition accompanying the ferromagnetic to paramagnetic transition at intermediate doping ($x\sim0.2-0.4$). These findings indicate clearly that substitutional disorder has to be considered as an important effect when addressing the colossal magnetoresistance properties of manganites.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑