We report the emission of strong coherent broadband terahertz radiation from 6H-Silicon-Carbide (SiC) excited with optical pulses. The measured terahertz spectral signal-to-noise ratio is better than one thousand. We determine that the terahertz radiation is generated via second order optical nonlinearity (optical rectification). We present a measurement of the ratio of nonlinear susceptibility tensor elements $χ_{zzz}^{(2)}/χ_{zxx}^{(2)}$ and the complex index of refraction of silicon carbide at THz frequencies.
We report on terahertz (THz) electron paramagnetic resonance generalized spectroscopic ellipsometry (THz-EPR-GSE). Measurements of the field and frequency dependencies of the magnetic response due to the spin transitions associated with the nitrogen defect in 4H-SiC are shown as an example. THz-EPR-GSE dispenses with the need of a cavity, permits independently scanning field and frequency parameters, and does not require field or frequency modulation. We investigate spin transitions of hexagonal ($h$) and cubic ($k$) coordinated nitrogen including coupling with its nuclear spin (I=1), and we p…
We observe a terahertz radiation from a hydrogen-bonded organic molecular ferroelectric 5,6-dichloro-2-methylbenzimidazole excited by a femtosecond laser pulse at room temperature. The emitted terahertz wave consists of three oscillatory components, the frequencies of which agree with those of Raman- and infrared-active phonon modes. This suggests that the terahertz radiation is attributed to polarization modulations by infrared-active phonons excited via the impulsive stimulated Raman scattering processes. By taking into account the Raman polarizability tensor and dipole-moment for each phono…
Polarization control of terahertz wave is a challenging subject in terahertz science and technology. Here, we report a simple method to control polarization state of the terahertz wave in terahertz generation process. At room temperature, terahertz radiation from a noncentrosymmetric and chiral oxide, sillenite Bi$_{12}$GeO$_{20}$, is observed by the irradiation of linearly polarized femtosecond laser pulses at 800 nm. The polarization state of the emitted terahertz wave is found to be elliptic with an ellipticity of $\sim$0.37$\pm$0.10. Furthermore, the ellipticity was altered to a nearly zer…
Terahertz lights are usually generated through the optical rectification process within a femtosecond laser pulse in non-centrosymmetric materials. Here, we report a new generation mechanism of terahertz lights based upon a photoinduced phase transition (PIPT), in which an electronic structure is rapidly changed by a photoirradiation. When a ferroelectric organic molecular compound, tetrathiafulvalene-p-chloranil, is excited by a femtosecond laser pulse, the ionic-to-neutral transition is driven and simultaneously a strong terahertz radiation is produced. By analyzing the terahertz electric-fi…
Terahertz radiation by optical rectification has been observed at room temperature in a hydrogen-bonded organic molecular ferroelectric crystal, 2-phenyl malondialdehyde (PhMDA). The radiated electromagnetic wave consisted of a single-cycle terahertz pulse with a temporal width of $\sim$ 0.5 ps. The terahertz radiation amplitude divided by the sample thickness in PhMDA was nearly equivalent to that in a typical terahertz wave emitter ZnTe. This is attributable to a long coherence length in the range of 130 $\sim$ 800 $μ$m for the terahertz radiation from PhMDA. We also discussed the possibilit…
We report on the observation of terahertz radiation in a non-centrosymmetric insulating oxide, paratellurite ($α$-TeO$_2$) by irradiation of a femtosecond laser pulse at room temperature. In the power spectrum of the terahertz radiation, an intensity fringe pattern with a period of $\sim$ 0.25 THz shows up below 3 THz. It can be reproduced by taking into account the effective generation length for the terahertz radiation with a poor phase-matching condition. In addition, a temporal oscillation component appears in the radiated terahertz wave with a frequency of $\sim$ 3.71 THz, which is in goo…
We report on the emission of terahertz radiation by irradiation of femtosecond laser pulses in non-centrosymmetric paraelectric and ferroelectric phases of Co$_3$B$_7$O$_{13}$I boracite. The Generation of the terahertz waves in both phases is caused by optical rectification via a second-order nonlinear optical effect. In the ferroelectric phase, we successfully visualized ferroelectric domains by analyzing the polarization state of the terahertz wave radiated from the crystal. In a large area of the crystal ($\sim$ 500 $\times$ 500 $μ$m$^2$), the observed polarization vector of the radiated te…
Using a spatiotemporal terahertz radiation imaging technique, we visualize photogenerated metallic inhomogeneity in the charge-ordered insulating phase of Pr$_{0.7}$Ca$_{0.3}$MnO$_3$ thin film. We reveal that photogenerated metallic regions with micrometer length scales within the charge-ordered insulating matrix are created on subpicoseond time scales. Such an inhomogeneity becomes homogeneous when the laser power and bias voltage are increased. The observed photogenerated metallic regions would act as nucleus of the insulator-metal transition observed in Pr$_{0.7}$Ca$_{0.3}$MnO$_3$.
Electromagnetic radiation of 1 - 10 THz range has been found at room temperature in a structure with a point contact between a ferromagnetic rod and a thin ferromagnetic film under electric current of high enough density. The radiation is due to nonequilibrium spin injection between the structure components. By estimates, the injection can lead to inverted population of the spin subbands. The radiation power exceeds by orders of magnitude the thermal background (with the Joule heating taking into account) and follows the current without inertia.
This is a brief overview of the main physical ideas for application of field effect transistors for generation and detection of TeraHertz radiation. Resonant frequencies of the two-dimensional plasma oscillations in FETs increase with the reduction of the channel dimensions and reach the THz range for sub-micron gate lengths. When the mobility is high enough, the dynamics of a short channel FET at THz frequencies is dominated by plasma waves. This may result, on the one hand, in a spontaneous generation of plasma waves by a dc current and on the other hand, in a resonant response to the incomi…
We show that in graphene epitaxially grown on SiC the Drude absorption is transformed into a strong terahertz plasmonic peak due to natural nanoscale inhomogeneities, such as substrate terraces and wrinkles. The excitation of the plasmon modifies dramatically the magneto-optical response and in particular the Faraday rotation. This makes graphene a unique playground for plasmon-controlled magneto-optical phenomena thanks to a cyclotron mass 2 orders of magnitude smaller than in conventional plasmonic materials such as noble metals.
Terahertz (THz) radiation has been observed from multiferroic BiFeO$_3$ thin films via ultrafast modulation of spontaneous polarization upon carrier excitation with illumination of femtosecond laser pulses. The radiated THz pulses from BiFeO$_3$ thin films were clarified to directly reflect the spontaneous polarization state, giving rise to a memory effect in a unique style and enabling THz radiation even at zero-bias electric field. On the basis of our findings, we demonstrate potential approaches to ferroelectric nonvolatile random access memory with nondestructive readability and ferroelect…
We report on terahertz (THz) radiation under electrical pumping from a degenerate semiconductor possessing an electron accumulation layer. In InN, the random grating formed by topographical defects provides high-efficiency coupling of surface plasmon polaritons supported by the accumulation layer to the THz emission. The principal emission band occupies the 2-6 THz spectral range. We establish a link between the shape of emission spectra and the structural factor of the random grating and show that the change of slope of power dependencies is characteristic for temperature-dependent plasmonic …
A detailed theoretical study is presented for the influence of linearly polarised intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for 1s and 2p states on intensity and frequency of the THz radiation has been examined.
In this paper we compare suitability of three different semi-insulating bulk silicon carbide (SiC) materials for fabrication of radiation detectors. We prepared planar sensors with various metal contact combination and characterized detector quality by the alpha spectroscopy and I-V characteristic measurements. We observed that 4H-SiC material from the II-VI company is not suitable for radiation detector fabrication due to high concentration of vanadium doping. We also present a poor charge collection efficiency of the 4H-SiC Norstel material due to high concentration of residual impurities an…
We show that a moving Josephson vortex in spatially modulated layered superconductors generates out-of-plane THz radiation. Remarkably, the magnetic and in-plane electric fields radiated are of the same order, which is very unusual for any good-conducting medium. Therefore, the out-of-plane radiation can be emitted to the vacuum without the standard impedance mismatch problem. Thus, the proposed design can be more efficient for tunable THz emitters than previous proposals, for radiation only propagating along the ab-plane.
We propose how to control the THz radiation generated by fast moving Josephson vortices in spatially modulated (either along the c-axis or the ab-plane) samples of Bi-2212 and related superconducting compounds. We show that the JVs moving in a subset of weaker junctions can generate out-of-ab-plane and outside-the-cone Cherenkov radiation. The ab-plane modulation of superconducting properties (achieved, for instance, by ion irradiation lithography) can result in transition radiation within certain frequency windows, i.e., allowing the design of tunable THz emitters and THz photonic crystals.
Strong terahertz radiation from mesa structure of $\rm{Bi_2Sr_2CaCu_2O_{8+δ}}$ single crystal has been observed recently, where the mesa intrinsically forms a cavity. For a thick mesa of large number of junctions, there are many cavity modes with different wave vectors along the c-axis corresponding to almost degenerate bias voltages. The mechanism responsible for exciting the uniform mode which radiates coherent terahertz waves in experiments is unknown. In this work, we show that the in-plane dissipation selects the uniform mode. For perturbations with non-zero wave numbers along the c-axis,…
Quantum confinement, magnetic-field effects, and laser coupling with the two low-lying states of electrons bound to donor impurities in semiconductors may be used to coherently manipulate the two-level donor system in order to establish the appropriate operational conditions of basic quantum bits (qubits) for solid-state based quantum computers. Here we present a detailed theoretical calculation of the damped Rabi oscillations and time evolution of the 1s and 2p+ donor states in bulk GaAs under an external magnetic field and in the presence of terahertz laser radiation, and their influence on …
We propose a novel tunable terahertz (THz) filter using the resonant acousto-optic (RAO) effect. We present a design based on a transverse optical (TO) phonon mediated interaction between a coherent acoustic wave and the THz field in LiNbO3. We predict a continuously tunable range of the filter up to 4 THz via the variation of the acoustic frequency between 0.1 and 1 GHz. The RAO effect in this case is due to cubic and quartic anharmonicities between TO phonons and the acoustic field. The effect of the interference between the anharmonicities is also discussed.
We demonstrate a new method to detect ferroelectric domains in inside and surface regions of organic ferroelectrics by mapping out two orthogonally polarized terahertz waves radiated from the crystal upon the irradiation of near-infrared femtosecond laser pulses. We used polarization dependence of the effective depths radiating the terahertz waves, which originate from the optical anisotropy in the terahertz frequency region. This allows us to distinguish ferroelectric domains in the inside and surface regions of the crystals. We applied this method to a room-temperature organic supramolecular…
Raman spectroscopy has been used to identify defective bonding in neon and silicon ion irradiated single crystals of 6H-SiC. Observable differences exist in the C-C bonding region corresponding to different defect structures for neon and silicon ion implantations. Raman spectra of ion irradiated SiC show less tensile strain than neutron irradiations, explained by a residual compressive stress caused by the swelling constrained by the undamaged substrate. Evidence of oxidation during high temperature ion implantation is observed as C-O and Si-O Raman signals. Annealing irradiated SiC while acqu…
The oscillatory interlayer exchange interaction between two magnetic layers separated by a metallic spacer is one of the few coherent quantum phenomena that persist at room temperature. Here we show that this interaction can be controlled dynamically by illuminating the sample (e.g. a spin valve) with radiation in the 10-100 THz range. We predict that the exchange interaction can be changed from ferromagnetic to anti-ferromagnetic (and vice versa) by tuning the amplitude and/or the frequency of the radiation. Our chief theoretical result is an expression that relates the dynamical exchange int…
The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements, coupled with Monte Carlo simulations of THz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoexcited electrons was determined via optical-pump THz-probe spectroscopy, and was found to double after passivation. These experiments demonstrate that passivation significantly reduces the surface state…
Materials with a negative dielectric permittivity (e.g. metals) display high reflectance and can be shaped into nanoscale optical-resonators exhibiting extreme mode confinement, a central theme of nanophotonics. However, the ability to $actively$ tune these effects remains elusive. By photoexciting free carriers in 4H-SiC, we induce dramatic changes in reflectance near the "Reststrahlen band" where the permittivity is negative due to charge oscillations of the polar optical phonons in the mid-infrared. We infer carrier-induced changes in the permittivity required for useful tunability (~ 40 cm…
We compute the jerk current tensor of GaAs, Si, and ferroelectric single-layer GeS, GeSe, SnS, and SnSe. We find peak values of the order of $10^{14}$ mA/V$^3$s$^2$ in GaAs and Si within the visible energy spectrum and an order of magnitude larger in single-layer GeS, GeSe, SnSe and SnS. We show that the detailed knowledge of this tensor and its large value in single-layer GeS, GeSe, SnSe and SnS make it possible to predict the magnitude and angle of rotation of polarization of intense terahertz pulses generated in photoconductive switches and point to alternative functionalities of these devi…
Terahertz (THz) radiation is a powerful tool with widespread applications ranging from imaging, sensing, and broadband communications to spectroscopy and nonlinear control of materials. Future progress in THz technology depends on the development of efficient, structurally simple THz emitters that can be implemented in advanced miniaturized devices. Here we show how the natural electronic anisotropy of layered conducting transition metal oxides enables the generation of intense terahertz radiation via the transverse thermoelectric effect. In thin films grown on offcut substrates, femtosecond l…
We demonstrate that polymer composites with a low loading of graphene, below 1.2 wt. %, are efficient as electromagnetic absorbers in the THz frequency range. The epoxy-based graphene composites were tested at frequencies from 0.25 THz to 4 THz, revealing total shielding effectiveness of 85 dB (1 mm thickness) with graphene loading of 1.2 wt. % at the frequency f=1.6 THz. The THz radiation is mostly blocked by absorption rather than reflection. The efficiency of the THz radiation shielding by the lightweight, electrically insulating composites, increases with increasing frequency. Our results …
We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency (CCE) distribution induced by 20 MeV C ions irradiations with fluences ranging from 20 to 200 ions/um2. The lateral IBIC microscopy with 4 MeV protons over the SBD cross section, carried out on the pristine diode evidenced the widening of the depletion layer extension as function of the applied bias and allowed the measurement of the minority carrier diffusion lengths. After the irradiation with C ions, lateral IBIC…
The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of 0.3-1.2 THz at room temperature. It has been found that the effective dynamic conductivity and effective radiation absorption coefficient in the heterostructure due to the presence of germanium quantum dots in it are much larger than the respective quantities of both the bulk Ge single crystal and Ge/Si(001) without arrays of quantum dots. The possible microscopi…
We report experimental observation of electrically-tunable coherent perfect absorption (CPA) of terahertz (THz) radiation in graphene. We develop a reflection-type tunable THz cavity formed by a large-area graphene layer, a metallic reflective electrode and an electrolytic medium in between. Ionic gating in the THz cavity allows us to tune the Fermi energy of graphene up to 1eV and to achieve critical coupling condition at 2.8 THz with absorption of 99%. With the enhanced THz absorption, we were able to measure the Fermi energy dependence of the transport scattering time of highly doped graphe…
The nano-scale intrinsic Josephson junctions in highly anisotropic cuprate superconductors have potential for generation of terahertz electromagnetic waves. When the thickness of a superconductor sample is much smaller than the wavelength of electromagnetic waves in vacuum, the superconductor renders itself as a cavity. Unlike conventional lasers, the presence of the cavity does not guarantee a coherent emission because of the internal degree of freedom of the superconductivity phase in long junctions. We study the excitation of terahertz wave by solitons in a stack of intrinsic Josephson junc…
Terahertz electromagnetic radiation is extremely useful for numerous applications such as imaging and spectroscopy. Therefore, it is highly desirable to have an efficient table-top emitter covering the 1-to-30-THz window whilst being driven by a low-cost, low-power femtosecond laser oscillator. So far, all solid-state emitters solely exploit physics related to the electron charge and deliver emission spectra with substantial gaps. Here, we take advantage of the electron spin to realize a conceptually new terahertz source which relies on tailored fundamental spintronic and photonic phenomena in…
We observe intense pulses of far-infrared electromagnetic radiation emitted from arrays of InAs nanowires. The THz radiation power efficiency of these structures is about 15 times higher compared to a planar InAs substrate. This is explained by the preferential orientation of coherent plasma motion to the wire surface, which overcomes radiation trapping by total-internal reflection. We present evidence that this radiation originates from a low-energy acoustic surface plasmon mode of the nanowire. This is supported by independent measurements of electronic transport on individual nanowires, ult…
Nonlinear intensity dependence of ratchet currents induced by terahertz laser radiation in bilayer graphene with asymmetric periodic grating gates
University of Regensburg（雷根斯堡大学）；CENTERA Laboratories, Institute of High Pressure Physics, Polish Academy of Sciences（波兰科学院高压物理研究所 CENTERA 实验室）；Ioffe Institute（约费研究所）；National Institute for Materials Science（日本国立材料研究所）
The terahertz radiation-induced conductivity and dielectric polarization tensors as well as the Faraday and Kerr rotation angles and the non-equilibrium spin textures are studied for two-dimensional electron gas with strong spin-orbit coupling subjected to high magnetic field and to tunable periodic potential of a two-dimensional gated superlattice. It is found that both real and imaginary parts of the frequency-dependent induced conductivity approach maximum values with sharp and detectable peaks at frequencies corresponding to the inter-subband transitions between spin-split magnetic subband…
