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arXiv 0807.2778cond-mat.mes-hall
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非掺杂介观结构中的低温输运

Low Temperature Transport in Undoped Mesoscopic Structures

S. Sarkozy, K. Das Gupta, C. Siegert, A. Ghosh, M. Pepper, I. Farrer, H. E. Beere, D. A. Ritchie, G. A. C. Jones

摘要:

使用高质量的未掺杂的GaAs/AlGaAs异质结构与光学图案化的绝缘层之间的两层栅极,它是可能的调查非常低的密度介观区域中的杂质的数量是很好地量化。散射长度标度的签名外观出现在受限的二维区域中,其中零偏异常(ZBA)也被观察到。这些结果明确地概述了分子束外延生长所需的参数,以获得超低密度的大的二维区域,以及清洁可再生的介观器件。

英文摘要:

Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified. Signature appearances of the scattering length scale arise in confined two dimensional regions, where the zero-bias anomaly (ZBA) is also observed. These results explicitly outline the molecular beam epitaxy growth parameters necessary to obtain ultra low density large two dimensional regions as well as clean reproducible mesoscopic devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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