We have investigated the anisotropy of the magnetoresistance in the Pr-based HF compound PrFe4P12. The large anisotropy of effective mass and its strong field dependence have been confirmed by resistivity measurements. Particularly for H||[111], where the effective mass is most strongly enhanced, the non-Fermi liquid behavior has been observed. Also, we have found the angular dependence of the magnetoresistance sharply enhanced at H||[111], which is evidently correlated with both the non-Fermi liquid behavior and the high-field ordered state (B-phase).
A pronounced asymmetry of magnetoresistance with respect to the magnetic field direction is observed for NbSe$_3$ crystals placed in a magnetic field perpendicular to their conducting planes. It is shown that the effect persists in a wide temperature range and manifests itself starting from a certain magnetic induction value $B_0$, which at $T=4.2$ K corresponds to the transition to the quantum limit, i.to the state where the Landay level splitting exceeds the temperature.
We report the magnetoresistance of a charge-density wave (CDW) in $o$-TaS$_3$ whiskers at 4.2 K under a magnetic field up to 5.2 T. An anisotropic negative magnetoresistance is found in the nonlinear regime of current-voltage characteristics. The angle dependence of the magnetoresistance, studied by rotating the magnetic field upon the $c$-axis, exhibited a two-fold symmetry. The magnetoresistance amplitude exhibits maxima when the field is parallel to the $a$-axis, whereas it vanishes to the $b$-axis. The observed anisotropy may come from difference in interchain coupling of adjacent CDWs alo…
A systematic study of the temperature and magnetic field dependence of the longitudinal and transverse resistivities of epitaxial thin films of magnetite (Fe3O4) is reported. The anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) are sensitive to the in-plane orientation of current and magnetization with respect to crystal axes in a way consistent with the cubic symmetry of the system. We also show that the AMR exhibit sign reversal as a function of temperature, and that it shows significant field dependence without saturation up to 9 T. Our results provide a unified descript…
Antiferromagnetic spintronics actively introduces new principles of magnetic memory, in which the most fundamental spin-dependent phenomena, i.e. anisotropic magnetoresistance effects, are governed by an antiferromagnet instead of a ferromagnet. A general scenario of the antiferromagnetic anisotropic magnetoresistance effects mainly stems from the magnetocrystalline anisotropy related to spin-orbit coupling. Here we demonstrate magnetic field driven contour rotation of the fourfold anisotropic magnetoresistance in bare antiferromagnetic Sr2IrO4/SrTiO3 (001) thin films hosting a strong spin-orb…
We report the discovery of giant and anisotropic magnetoresistance due to the orbital rearrangement in a non-magnetic correlated metal. In particular, we measured the magnetoresistance under fields up to 31.4 T in the cubic Pr-based heavy fermion superconductor PrV$_2$Al$_{20}$ with a non-magnetic $Γ_3$ doublet ground state, exhibiting antiferro-quadrupole ordering below 0.7 K. For the [100] direction, we find that the high-field phase appears between 12 T and 25 T, accompanied by a large jump at 12 T in the magnetoresistance ($ΔMR \sim $ 100 $\% $) and in the anisotropic magnetoresistivity (A…
The impact of carrier localization on the anisotropic magnetoresistance (AMR) has been investigated in NSSMO thin films. Carrier localization is caused by the reduced average radius of the A-site of the perovskite lattice and enhanced size disorder due to substitution of smaller cations for larger.
MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become comparable. Below metal-insulator transition we found giant anisotropic magnetoresistance (GAMR), which depends on orientation of magnetization to crystallographic axes and manifests itself in positive magnetoresistance near 50% for Rxx at T=1.7K, H//[110] crystallographic direction and parallel to current in contrast to smaller and negative magnetoresistance for H//…
Slow oscillations of the in-plane magnetoresistance are observed in the rare-earth tritellurides and proposed as an effective tool to determine the parameters of electronic structure in various strongly anisotropic quasi-two-dimensional compounds. These oscillations do not originate from the small Fermi surface pockets, as revealed usually by the Shubnikov-de-Haas oscillations, but from the entanglement of close frequencies due to a finite interlayer transfer integral $t_z$, which allows to estimate its value. For TbTe$_3$ and GdTe$_3$ we obtain the estimate $t_z\approx 1$ meV.
We study TmB_4, a frustrated magnet on the Archimedean Shastry-Sutherland lattice, through magnetization and transport experiments. The lack of anisotropy in resistivity shows that TmB_4 is an electronically three-dimensional system. The magnetoresistance (MR) is hysteretic at low-temperature even though a corresponding hysteresis in magnetization is absent. The Hall resistivity shows unconventional anomalous Hall effect (AHE) and is linear above saturation despite a large MR. We propose that complex structures at magnetic domain walls may be responsible for the hysteretic MR and may also lead…
Studies of interlayer transport in layered metals have generally made use of zero temperature conductivity expressions to analyze angle-dependent magnetoresistance oscillations (AMRO). However, recent high temperature AMRO experiments have been performed in a regime where the inclusion of finite temperature effects may be required for a quantitative description of the resistivity. We calculate the interlayer conductivity in a layered metal with anisotropic Fermi surface properties allowing for finite temperature effects. We find that resistance maxima are modified by thermal effects much more …
We measured the magnetoresistance of the 2D electron liquid formed at the (111) LaAlO$_3$/SrTiO$_3$ interface. The hexagonal symmetry of the interface is manifested in a six-fold crystalline component appearing in the anisotropic magnetoresistance (AMR) and planar Hall data, which agree well with symmetry analysis we performed. The six-fold component increases with carrier concentration, reaching 15% of the total AMR signal. Our results suggest the coupling between higher itinerant electronic bands and the crystal as the origin of this effect and demonstrate that the (111) oxide interface is a…
In this work, we argue that an anisotropic interaction potential may stabilize anisotropic liquid phases of electrons even in a strong magnetic field regime where normally one expects to see only isotropic quantum Hall or isotropic Fermi liquid states. We use this approach to support a theoretical framework that envisions the possibility of an anisotropic liquid crystalline state of electrons in the lowest Landau level. In particular, we argue that an anisotropic liquid state of electrons may stabilize in the lowest Landau level close to the liquid-solid transition region at filling factor $ν=…
A parallel field negative magnetoresistance has been found in quench-condensed ultrathin films of amorphous bismuth in the immediate vicinity of the thickness-tuned superconductor-insulator transition. The effect appears to be a signature of quantum fluctuations of the order parameter associated with the quantum critical point.
SrIrO3, the three-dimensional member of the Ruddlesden-Popper iridates, is a paramagnetic semimetal characterised by a the delicate interplay between spin-orbit coupling and Coulomb repulsion. In this work, we study the anisotropic magnetoresistance (AMR) of SrIrO3 thin films, which is closely linked to spin-orbit coupling and probes correlations between electronic transport, magnetic order and orbital states. We show that the low-temperature negative magnetoresistance is anisotropic with respect to the magnetic field orientation, and its angular dependence reveals the appearance of a fourfold…
Using magnetoresistance measurements as a function of applied magnetic field and its direction of application, we present sharp angular-dependent magnetoresistance oscillations for the electron-doped cuprates in their low-temperature non-metallic regime. The presence of irreversibility in the magnetoresistance measurements and the related strong anisotropy of the field dependence for different in-plane magnetic field orientations indicate that magnetic domains play an important role for the determination of electronic properties. These domains are likely related to the stripe phase reported pr…
Thin films of perovskite manganite La$_{0.7}$Ca$_{0.3}$MnO$_{3}$ were grown epitaxially on various substrates by either the pulsed laser deposition method or laser molecular beam epitaxy. The substrates change both the volume and symmetry of the unit cell of the films. It is revealed that the symmetry as well as the volume of the unit cell have strong influence on the metal-insulator transition temperature and the size of magnetoresistance.
We investigate the effects of strain on antiferromagntic (AFM) single crystal thin films of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are att…
We performed a systematic study of the temperature- and field-dependence of magnetization and resistivity of Gd2PdSi3, which is a centrosymmetric skyrmion crystal. While the magnetization behavior is consistent with the reported phase diagram based on susceptibility, we show that a phase diagram can also be constructed based on the anomalous magnetoresistance with one-to-one correspondence among all the features. In addition, the crossover boundary into the field-induced ferromagnetic state is also identified. Our results suggest that the ferromagnetic spin fluctuations above the Néel temperat…
The temperature and thickness dependencies of the in-plane anisotropic magnetoresistance (AMR) of SmB$_6$ thin films are reported. We find that the AMR changes sign from negative ($ρ_{||}<ρ_{\perp}$) at high temperatures to positive ($ρ_{||}>ρ_{\perp}$) at low temperatures. The temperature, T$_s$, at which this sign change occurs, decreases with increasing film thickness $t$ and T$_s$ vanishes for $t$ $>$ 30 nm. We interpret our results in the framework of a competition between two components: a negative bulk contribution and a positive surface AMR.
We show that the Anomalous Hall Effect (AHE) observed in Colossal Magnetoresistance Manganites is a manifestation of Berry phase effects caused by carrier hopping in a non-trivial spin background. We determine the magnitude and temperature dependence of the Berry phase contribution to the AHE, finding that it increases rapidly in magnitude as the temperature is raised from zero through the magnetic transition temperature T_c, peaks at a temperature $T_{max} > T_c$ and decays as a power of T, in agreement with experimental data. We suggest that our theory may be relevant to the anomalous hall e…
The helimagnetic order describes a non-collinear spin texture of antiferromagnets, arising from competing exchange interactions. Although collinear antiferromagnets are elemental building blocks of antiferromagnetic (AFM) spintronics, the potential of implementing spintronic functionality in non-collinear antiferromagnets has not been clarified thus far. Here, we propose an AFM helimagnet of EuCo2As2 as a novel single-phase spintronic material that exhibits a remarkable sign reversal of anisotropic magnetoresistance (AMR). The contrast in the AMR arises from two electrically distinctive magnet…
The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La0.7Sr0.3MnO3/SrTiO3 (LSMO/STO) superlattices grown by an rf sputtering system are systematically analyzed to study the spin polarization of manganite at interfaces. A perfectly epitaxial growth with sharp interfaces between LSMO and STO layers is confirmed by the transmission electron microscopy (TEM) image and the x-ray diffraction. The presence of positive low-temperature AMR in LSMO/STO superlattices with thinner LSMO layers or thicker STO layers implies that two bands of majority and minority character c…
Angular-dependent in-plane magnetoresistance (AMR) for single crystal $Na_{0.34}(H_3O)_{0.15}CoO_2$ with charge ordering is studied systematically. The anisotropic magnetoresistance shows a twofold symmetry at high temperature with rotating H in the Co-O plane, while a sixfold symmetry below a certain temperature ($T_ρ$). At $T_ρ$, the symmetry of AMR changes from twofold to fourfold with rotating magnetic field (H) in the plane consisting of the current and c-axis. The variation of AMR symmetry with temperature arises from the subtle changes of the spin structure. These results give a direct …
The interlayer magnetoresistance of a quasi-two-dimensional layered metal with a d-wave pseudogap is calculated semiclassically. An expression for the interlayer resistivity as a function of the strength and direction of the magnetic field, the magnitude of the pseudogap, temperature, and scattering rate is obtained. We find that the pseudogap, by introducing low-energy nodal quasiparticle contours, smooths the dependence on field direction in a manner characteristic of its anisotropy. We thus propose that interlayer resistance measurements under a strong field of variable orientation can be u…
We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using high-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer. The unusual behaviour exhibited by these devices is discussed in the context of existing theories for enhanced AMR ferromagnetic semiconductor nanoscale devices, particularly with regard to the dependence on the magnetotransport of the bulk material. We conclude that our results are most consist…
Transport and magnetic studies on polycrystalline samples of SrFe1-xCoxO3-d have been carried out to investigate the relationship between the magnetic structure and the anomalous Hall resistivity rH. The hysteretic behavior of the magnetization observed in the measurements with varying temperature T up and then down after zero field cooling indicates that the system has the reentrant spin-glass phase, which is supported by the increasing width of the magnetic reflections observed by neutron diffraction with decreasing T below the Curie temperature TC. Detailed analyses of the observed Hall res…
A spin valve is a prototype of spin-based electronic devices found on ferromagnets, in which an antiferromagnet plays a supporting role. Recent findings in antiferromagnetic spintronics show that an antiferromagnetic order in single-phase materials solely governs dynamic transport, and antiferromagnets are considered promising candidates for spintronic technology. In this work, we demonstrated antiferromagnet-based spintronic functionality on an itinerant Ising antiferromagnet of Ca0.9Sr0.1Co2As2 by integrating nanoscale spin-valve-type structure and investigating anisotropic magnetic properti…
Thin films of perovskite manganite La_{0.7}Ca_{0.3}MnO_{3} were grown epitaxially on SrTiO_3(100), MgO(100) and LaAlO_3(100) substrates by the pulsed laser deposition method. Microscopic structures of these thin film samples as well as a bulk sample were fully determined by x-ray diffraction measurements. The unit cells of the three films have different shapes, i.e., contracted tetragonal, cubic, and elongated tetragonal for SrTiO_3, MgO, and LaAlO_3 cases, respectively, while the unit cell of the bulk is cubic. It is found that the samples with cubic unit cell show smaller peak magnetoresista…
In this paper, the magnetic and transport properties were systematically studied for EuAg$_4$As$_2$ single crystals, crystallizing in a centrosymmetric trigonal CaCu$_4$P$_2$ type structure. It was confirmed that two magnetic transitions occur at $\textit{T}$$_{N1}$ = 10 K and $\textit{T}$$_{N2}$ = 15 K, respectively. With the increasing field, the two transitions are noticeably driven to lower temperature. At low temperatures, applying a magnetic field in the $\textit{ab}$ plane induces two successive metamagnetic transitions. For both $\textit{H}$ $\parallel$ $\textit{ab}$ and $\textit{H}$ $…
SrRuO3 is an itinerant ferromagnet and in its thin film form when grown on miscut SrTiO3 it has Tc of ~ 150 K and strong uniaxial anisotropy. We measured both the Hall effect and the magnetoresistance (MR) of the films as a function of the angle between the applied field and the normal to the films at temperatures above Tc. We extracted the extraordinary Hall effect that is proportional to the perpendicular component of the magnetization and thus the MR for each angle of the applied field could be correlated with the magnitude and orientation of the induced magnetization. We successfully fit t…
We present electrical transport data for single-crystalline Co$_2$FeSi which provide clear-cut evidence that this Heusler compound is truly a half-metallic ferromagnet, i.e. it possesses perfect spin-polarization. More specifically, the temperature dependence of $ρ$ is governed by electron scattering off magnons which are thermally excited over a sizeable gap $Δ\approx 100 K$ ($\sim 9 meV$) separating the electronic majority states at the Fermi level from the unoccupied minority states. As a consequence, electron-magnon scattering is only relevant at $T\gtrsimΔ$ but freezes out at lower temper…
Detailed behavior of the magnetoresistance (MR) is studied in lightly doped antiferromagnetic La_{1.99}Sr_{0.01}CuO_{4}, where, thanks to the weak ferromagnetic moment due to spin canting, the antiferromagnetic (AF) domain structure can be manipulated by the magnetic field. The MR behavior demonstrates that CuO_2 planes indeed contain anti-phase AF domain boundaries in which charges are confined, forming anti-phase stripes. The data suggest that a high magnetic field turns the anti-phase stripes into in-phase stripes, and the latter appear to give better conduction than the former, which chall…
Magnetic-field (H) induced first-order magnetic transition and the assiciated electronic phase-separation phenomena are active topics of research in magnetism. Magnetoresistance (MR) is a key property to probe these phenomena and, in literature, a butterfly-shaped MR loop has been noted while cycling the field, with the envelope curve lying below the virgin curve in MR versus H plots of such materials. Here, we report an opposite behavior of MR loop for an alloy, Tb4LuSi3, at low temperatures (<<20 K) in the magnetically ordered state. Such an anomalous curve reveals unexpected domination of h…
In this study, we present a theoretical interpretation of the experimental results that the anisotropic magnetoresistance (AMR) effect has a four-fold symmetric component, $c_4$, in cubic ferromagnetic metals. The theoretical model that we employ is based on the Anderson impurity model that includes a four-fold symmetric crystalline electric field, and we assume that the impurities have 3d electron orbitals and spin--orbit interaction (SOI). We describe the DC conductivity on the basis of the Kubo formula, and we investigate $c_4$ by analyzing the magnetization direction dependence of the resu…
Magnetoresistance (MR) in the a-axis resistivity of untwinned YBa_{2}Cu_{3}O_{y} single crystals is measured for a wide range of doping (y = 6.45 - 7.0). The y-dependence of the in-plane coherence length ξ_{ab} estimated from the fluctuation magnetoconductance indicates that the superconductivity is anomalously weakened in the 60-K phase; this gives evidence, together with the Hall coefficient and the a-axis thermopower data that suggest the hole doping to be 12% for y = 6.65, that the origin of the 60-K plateau is the 1/8 anomaly. At high temperatures, the normal-state MR data show signatures…
