自旋忆阻系统
Spin memristive systems
摘要：
最近，除了众所周知的电阻器、电容器和电感器之外，第四种无源电路元件，称为忆阻器，已经根据理论预测被确定。在这种情况下使用的模型实例包括在纳米级系统与耦合的离子和电子传输。在这里，我们讨论了一个系统，其忆阻行为是完全基于电子自旋自由度，这允许一个更方便的控制比纳米结构中的离子传输。在半导体/铁磁体结的时间相关的自旋输运的分析提供了忆阻行为的直接证据。我们的方案是从根本上不同于先前讨论的方案的忆阻器件，并拓宽了可能的应用范围的半导体自旋电子学。
英文摘要：
Recently, in addition to the well-known resistor, capacitor and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale system with coupled ionic and electronic transport. Here, we discuss a system whose memristive behaviour is based entirely on the electron spin degree of freedom which allows for a more convenient control than the ionic transport in nanostructures. An analysis of time-dependent spin transport at a semiconductor/ferromagnet junction provides a direct evidence of memristive behaviour. Our scheme is fundamentally different from previously discussed schemes of memristive devices and broadens the possible range of applications of semiconductor spintronics.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
