We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of $6\times 10^{6}$A/cm$^2$, the magnetization of the two magnetic rings can be switched back and forth between parallel and antiparallel onion states. Theoretical analysis and micromagnetic simulation show that the dominant mechanism for the observed current-driven switching is the spin torque rather than the current-induced circular Oersted field.
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required for magnetic switching are similar to values for all-metallic spin-valve devices. In the tunnel junctions, spin-transfer-driven switching can occur at voltages that are high enough to quench the tunnel magnetoresistance, demonstrating that the current remains spin-polarized at these voltages.
The influence of depolarizing field on the magnitude and stability of a uniform polarization in ferroelectric capacitors and tunnel junctions is studied using a nonlinear thermodynamic theory. It is predicted that, in heterostructures involving strained epitaxial films and metal electrodes, the homogeneous polarization state may remain stable against transformations into the paraelectric phase and into polydomain states down to the nanoscale. This result supports the possibility of depolarizing-field-related resistive switching in ferroelectric tunnel junctions with dissimilar electrodes. The …
Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization reversal in a ferroelectric barrier changes the tunneling current across the junction. Here, we demonstrate the reproducible tunneling electroresistance effect using a combination of Piezoresponse Force Microscopy (PFM) and Conducting Atomic Force Microscopy (C-AFM) techniques on nanometer-thick epitaxial BaTiO3 single crystal thin films on SrRuO3 bottom electrode…
We report a novel atom extraction mechanism from the native substrate by means of a scanning tunneling microscope tip-crash on a Ag(111) surface at 5 K. Individual atoms are scattered on the surface when a silver coated tip is dipped into the substrate at low tunneling biases. Quantitative analyses reveal that the mechanical energy supplied by the tip-crash dominates the atom extraction process. Application of this procedure is demonstrated by constructing quantum structures using the extracted atoms on an atom-by-atom basis.
We have observed at low temperatures (<8K) hysteretic I(V) characteristics for sub-mkm (~200nm) metallic break-junctions based on the heavy-fermion compound UPd2Al3. Degrading the quality of the contacts by in situ increasing the local residual resistivity or temperature rise reduces the hysteresis. We demonstrate that those hysteretic I(V) curves can be reproduced theoretically by assuming the constriction to be in the thermal regime. Our calculations show that such anomalous I(V) curves are due to the sharp increase of ρ(T) of UPd2Al3 near the Neel temperature T_N ~ 14K. From this point of v…
In a recent Letter [N.A. Pertsev and H. Kohlstedt, Phys. Rev. Lett. 98, 257603 (2007)] the authors claim that "even nanoscale capacitors and tunnel junctions may have out of plane polarization sufficient for memory applications." Here we show in an elementary way that this conclusion is not substantiated by their calculations and that they should have come to the opposite conclusion within their approximations.
Flexoelectricity is a universal electromechanical coupling effect whereby all dielectric materials polarize in response to strain gradients. In particular, nanoscale flexoelectricity promises exotic phenomena and functions, but reliable characterization methods are required to unlock its potential. Here, we report anomalous mechanical control of quantum tunnelling that allows for characterizing nanoscale flexoelectricity. By applying strain gradients with an atomic force microscope tip, we systematically polarize an ultrathin film of otherwise nonpolar SrTiO$_{3}$, and simultaneously measure t…
We observe both dc voltage rectification and frequency conversion that occur when a reference microwave current is injected to a MgO based magnetic tunnel junction (MTJ). The rectification that is spin-transfer torque dependent is observed when the frequency of the input microwave current coincides with the resonance frequency of the magnetization of the active layer. In addition, we demonstrate that frequency conversion is the result of amplitude modulation between the reference signal and the resistance of the MTJ that is fluctuating at the resonance frequency of the magnetization of the act…
In order to fully understand nanoscale heat transport it is necessary to spectrally characterize phonon transmission in nanostructures. Towards this goal we have developed a microfabricated phonon spectrometer. We utilize microfabricated superconducting tunnel junction-based (STJ) phonon transducers for the emission and detection of tunable, non-thermal, and spectrally resolved acoustic phonons, with frequencies ranging from ~100 to ~870 GHz, in silicon microstructures. We show that phonon spectroscopy with STJs offers a spectral resolution of ~15-20 GHz, which is ~20 times better than thermal…
We report the destabilization of the charge ordered insulating (COI) state in a localized region of Pr_0.63Ca_0.37MnO_3 single crystal by current injection using a scanning tunneling microscope tip. This leads to controlled phase separation and formation of localized metallic nanoislands in the COI matrix which have been detected by local tunneling conductance mapping. The metallic regions thus created persist even after reducing the injected current to lower values. The original conductance state can be restored by injecting a current of similar magnitude but of opposite polarity. We thus ach…
Thickness uniformity is regarded as an important parameter in designing thin film devices. However, some applications based on films with non-uniform thickness have recently emerged, such as gas sensors and optimized materials based on the gradual change of film composition. This work deals with superconducting Pb thin films with a thickness gradient prepared with the aid of a diffuse stencil mask. Atomic Force Microscopy and Energy-Dispersive X-ray Spectroscopy show variations ranging from 90~nm to 154~nm. Quantitative magneto-optical images reveal interesting features during both the abrupt …
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when the voltage applied to the device is sufficiently high. From two-dimensional self-consistent non-equilibrium Green's function simulations, the dependence of the Schottky barrier profile on the applied …
Nanoscale Electronic Phase Separation Driven by Fe-site Ordering in Fe\textsubscript{5-x}GeTe\textsubscript{2}
Indian Institute of Technology Delhi（印度德里理工学院）；S. N. Bose National Centre for Basic Sciences（S.N.玻色基础科学国家中心）；Indian Institute of Science Education and Research Bhopal（印度科学教育研究学院博帕尔分校）
In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20nm. We have used a 3D full band, quantum mechanical simulator based on atomistic sp3d5s spin-orbital coupled tight binding method.In this L shaped nonlinear geometry the gate electric field and tunnel junction internal field are oriented in same direction. A broken narrow bandgap BG structure has another advantage that transport is by mixture of electrons holes. TFETs are …
Ability to tailor the nature of the magnetic coupling between two ferromagnetic electrodes can enable the realization of new spintronics device systems. This paper discusses our finding that deposition of an ultrathin tantalum (Ta) on the NiFe top electrode reversed the nature of inter-ferromagnetic electrode coupling. We observed that the deposition of ~ 5 nm Ta on the top of a magnetic tunnel junction with Ta( 2 nm)/Co(5 nm)/NiFe (5 nm)/AlOx( 2 nm)/NiFe (10-15 nm) configuration changed the magnetic coupling between two ferromagnetic electrodes from antiferromagnetic to ferromagnetic. We inve…
The magnetic stray field is an unavoidable consequence of ferromagnetic devices and sensors leading to a natural asymmetry in magnetic properties. Such asymmetry is particularly undesirable for magnetic random access memory applications where the free layer can exhibit bias. Using atomistic dipole-dipole calculations we numerically simulate the stray magnetic field emanating from the magnetic layers of a magnetic memory device with different geometries. We find that edge effects dominate the overall stray magnetic field in patterned devices and that a conventional synthetic antiferromagnet str…
In this article we present a novel semi-analytical approach to calculate first-order electron-vibration coupling constants within the framework of density functional theory. It combines analytical expressions for the first-order derivative of the Kohn-Sham operator with respect to nuclear displacements with coupled-perturbed Kohn-Sham theory to determine the derivative of the electronic density matrix. This allows us to efficiently compute accurate electron-vibration coupling constants. We apply our approach to describe inelastic electron tunneling spectra of metallic and molecular junctions. …
In the present work, we have investigated the performances of p plus minus Al0.3Ga0.7Sb Pocket Implanted L shaped GaSb InAs staggered bandgap SG heterojunction vertical n channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20 nm. In this L shaped nonlinear geometry the gate electric field and tunnel junction internal field are oriented in same direction. We have used a 3 D full band atomistic sp3d5s spin orbital coupled tight binding method based quantum mechanical simulator. We have investigated current voltage characteristics, ON current, OF…
Thermal-magnetic noise at ferromagnetic resonance (T-FMR) can be used to measure magnetic perpendicular anisotropy of nanoscale magnetic tunnel junctions (MTJs). For this purpose, T-FMR measurements were conducted with an external magnetic field up to 14 kOe applied perpendicular to the film surface of MgO-based MTJs under a dc bias. The observed frequency-field relationship suggests that a 20 A CoFeB free layer has an effective demagnetization field much smaller than the intrinsic bulk value of CoFeB, with 4PiMeff = (6.1 +/- 0.3) kOe. This value is consistent with the saturation field obtaine…
This letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results predict that the possibility to separate electrically those two torque sources is very promising from a technological point of view for both next generation of nanoscale spintronic oscillators and microwave detectors. A scalable synchronization scheme based on the parallel connection of those three terminal devices is also proposed.
In the present work, we have investigated ballistic quantum transport in vertical halo implanted p plus minus GaSb InAs n TFETs. We have investigated the current voltage characteristics, ON current, OFF current leakage, subthreshold swing variation as function of gate length, drain length, gate undercut, equivalent oxide thickness, High K and drain thickness. The electrostatic control, I V performances and optimization of device structure are carried out for novel L shaped nonlinear geometry n TFETs. In the n TFETs device p plus minus GaSb InAs heterostructure gives rise to type III broken gap…
We report on a photodetector in which colloidal quantum-dots directly bridge nanometer-spaced electrodes. Unlike in conventional quantum-dot thin film photodetectors, charge mobility no longer plays a role in our quantum-dot junctions as charge extraction requires only two individual tunnel events. We find an efficient photoconductive gain mechanism with external quantum-efficiencies of 38 electrons-per-photon in combination with response times faster than 300 ns. This compact device-architecture may open up new routes for improved photodetector performance in which efficiency and bandwidth do…
While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical strain, achieving an enhancement factor of ~2 in the experimental tunneling magnetoresistance (TMR) ra…
Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through MgO barriers is only beginning to be unravelled. Using planar magnetic tunnel junctions in which ultra-thin layers of magnetic metals are deposited in the middle of a MgO tunnel barrier here we demonstrate that the TMR is strongly modified when these layers are discontinuous and composed of small pancake shaped nanodots. At low temperatures, in the Coulomb …
In discrete energy structure of nanoscale magnets, nonadiabatic transitions at avoided level crossings lead to fundamental processes of dynamics of magnetizations. The thermal environment causes dissipative effects on these processes. In this paper we review the features of the nonadiabatic transition and the influence of the thermal environment. In particular we discuss the temperature independent stepwise structure of magnetization at very low temperatures (deceptive nonadiabatic transition), the alternate enhancement of relaxation in the sequence of resonant tunneling points (parity effects…
Nonexponential relaxation of magnetization at resonant tunneling points of nanoscale molecular magnets is interpreted to be an effect of fluctuating random field around the applied field. We demonstrate such relaxation in Langevin equation analysis and clarify how the initial relaxation (square-root time) changes to the exponential decay. The scaling properties of the relaxation are also discussed.
We propose conceptually novel thermopile structures for the anisotropic magneto-Peltier effect (AMPE) to enhance its heating/cooling power. The cross-shaped thermopile, one of the representative AMPE-based thermopile structures, consists of four L-shaped ferromagnetic metals arranged in a cross-shaped configuration, which allows concentration of the AMPE-induced temperature modulation at the center of the cross structure. The AMPE-based thermopile does not require the use of any complicated junctions comprising different materials, enabling the design of compact and versatile temperature contr…
A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic devices. In parallel, Hafnia based ferroelectrics are showing great potential for device miniaturization down to the nanoscale. Here we utilize ferroelectric Hf0.5Zr0.5O2 (HZO) with thickness of only 2 nm, epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a large band-gap insulating barrier integrated in MFTJs with cobalt top electrodes. As previously reported for other MFTJs with similar electrodes, …
Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So far, most of existing FTJs have been based on perovskite-oxide barrier layers. The recent discovery of the two-dimensional (2D) van der Waals ferroelectric materials opens a new route to realize tunnel junctions with new functionalities and nm-scale dimensions. Due to the weak coupling between the atomic layers in these materials, the relative dipole alignmen…
We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 Ω-cm2) for various optoelectronic applications. We exploit the ability to overgrow high quality GaN over GdN nanoislands to create new nanoscale heterostructure designs that are not feasible in planar epitaxy. GdN nanoisland assisted inter-band tunneling was found to enhance tunneling in both of the polar orientations of GaN. Tunnel injection of holes was confirmed by low temperature op…
Numerical integration of the Landau-Lifshitz-Gilbert equation with thermal fluctuations is used to study the dynamic response of single-domain nanomagnets to rapid changes in the applied magnetic field. The simulation can resolve magnetization patterns within nanomagnets and uses the Fast Multipole method to calculate dipole-dipole interactions efficiently. The thermal fluctuations play an essential part in the reversal process whenever the applied field is less than the zero-temperature coercive field. In this situation pillar-shaped nanomagnets are found to reverse through a local curling mo…
