L型垂直InSb/InAsn-TFETs中的二维全带原子量子输运
2D full-band, Atomistic Quantum transport in L-shaped Vertical InSb/InAsn-TFETs
摘要：
本文研究了栅长为20 nm、沟道厚度为4 nm的L型垂直断带隙异质结构InSb InAsn沟道隧道场效应晶体管TFFET的性能。我们使用了一个基于原子sp 3d 5s自旋轨道耦合紧束缚方法的三维全带量子力学模拟器，在这个L型非线性几何结构中，栅电场和隧道结内场是同向的。断裂的窄带隙BG结构具有另一个优点，即通过电子空穴的混合来传输。薄膜晶体管由于具有低的亚阈值摆幅和高的Ion Ioff比，在低功耗逻辑设计中具有很好的应用前景。本文研究了低亚阈值摆幅和低压工作的L型非线性隧道FET的电流电压特性、导通电流、截止电流和亚阈值摆幅随等效氧化层厚度、栅长、漏长、栅底切、高K值和漏厚的变化关系。为了研究这种L形非线性几何中的二维电子输运，我们使用基于非平衡格林函数NEGF的量子输运方法，使用sp 3d 5s紧束缚模型，其中Poisson-Schr odinger求解器自洽迭代以获得势和局域态密度LDOS。这种方法的优点是它可以处理任意几何形状和复杂的2D结构，如带到带隧道BTBT器件。NEGF量子输运方法给出了三维泊松势和空间电荷、能量分辨透射率和光谱函数以及电子空穴在空间和能量上的局域态密度。
英文摘要：
In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20nm. We have used a 3D full band, quantum mechanical simulator based on atomistic sp3d5s spin-orbital coupled tight binding method.In this L shaped nonlinear geometry the gate electric field and tunnel junction internal field are oriented in same direction. A broken narrow bandgap BG structure has another advantage that transport is by mixture of electrons holes. TFETs are promising devices for lowpower logic design due to low subthreshold swing SS and high Ion Ioff ratio. We investigate current voltage characteristics, ON current OFF current andsubthreshold swing as function of equivalent oxide thickness, gate length, drain length, gate undercut, High K, and drain thicknessfor L shaped nonlinear geometry tunnel FET for low subthreshold swing and lowvoltage operation. To study 2D electronic transport in this L shaped nonlinear geometry we used Non Equilibrium Green Function NEGF based quantum transport method using sp3d5s tight binding model in which Poisson-Schr odinger solver self consistently iterates to obtain potentials and Local Density of States LDOS. The advantage of this method is that it can handle arbitrary geometries and complicated 2D structures like Band to Band tunnelling BTBT devices. NEGF quantum transport method gives output in terms of Poisson potential and space charge in 3D, energy resolved transmission and spectral function and Local Density of States of electrons holes in space and energy.
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