解释NiO薄膜中单极记忆和阈值电阻开关的逾渗模型
Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film
摘要：
我们观察到两种类型的单极电阻开关（RS）在NiO薄膜：存储RS在低温和阈值RS在高温。我们解释这些现象，使用键渗流模型，描述了导电丝的形成和破裂。假设焦耳加热和热耗散过程中的债券，我们解释如何RS类型可能发生，并通过温度控制。我们发现，这些单极RS是密切相关的，可以解释一个简单的统一的渗流图片。
英文摘要：
We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond percolation model that describes the forming and rupturing of conducting filaments. Assuming Joule heating and thermal dissipation processes in the bonds, we explain how both RS types could occur and be controlled by temperature. We show that these unipolar RS are closely related and can be explained by a simple unified percolation picture.
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