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arXiv 0903.1490cond-mat.mtrl-sci
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单极电阻开关中复位开关电压的可预测性

Predictability of reset switching voltages in unipolar resistance switching

S. B. Lee, S. C. Chae, S. H. Chang, T. W. Noh

摘要:

在NiO电容器的单极电阻开关中,导电通道中的焦耳热会导致低阻态电流-电压(I-V)曲线的强非线性。由于导电沟道的非线性性质,复位电流IR可以缩放到I-V曲线的非线性系数Bo。这种比例关系可用于预测复位电压,与NiO电容器尺寸无关;它也可应用于TiO 2和FeOy电容器。利用这种关系,我们开发了一种纠错方案,以提供一个明确的窗口,分离复位和设置电压在存储器操作。

英文摘要:

In unipolar resistance switching of NiO capacitors, Joule heating in the conducting channels should cause a strong nonlinearity in the low resistance state current-voltage (I-V) curves. Due to the percolating nature of the conducting channels, the reset current IR, can be scaled to the nonlinear coefficient Bo of the I-V curves. This scaling relationship can be used to predict reset voltages, independent of NiO capacitor size; it can also be applied to TiO2 and FeOy capacitors. Using this relation, we developed an error correction scheme to provide a clear window for separating reset and set voltages in memory operations.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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