使用受体掺杂的单极电阻开关Pt/SrTiOx/Pt电容器中的高复位电流的减小
Reduction of high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor doping
摘要：
单极性电阻开关的高复位电流IR是非易失性存储器实际应用中需要解决的重要问题。我们发现，在形成和设置过程中，顺应性电流，Icomp，可以作为一个重要的参数，以减少IR。掺杂Co或Mn可以显着降低使用SrTiOx膜制成的电容器的漏电流，打开一个更大的操作窗口Icomp。通过降低Icomp与受体掺杂，我们可以减少IR SrTiOx膜的约20倍。我们的工作表明，通过载流子掺杂降低Icomp可能是降低单极电阻开关中IR的可行替代方案。
英文摘要：
The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that,during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce IR. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, opening a larger operation window for Icomp. By decreasing Icomp with acceptor doping, we could reduce IR in SrTiOx films by a factor of approximately 20. Our work suggests that the decrease of Icomp by carrier doping could be a viable alternative for reducing IR in unipolar resistance switching.
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