NiO薄膜的异常电阻开关行为：可能同时存在导电通道的形成和破裂
Abnormal Resistance Switching Behaviors of NiO Thin Films: Possible Occurrence of Simultaneous Formation and Rupture of Conducting Channels
摘要：
我们详细报道了NiO薄膜电阻开关的电流-电压（I-V）特性。在单极电阻切换中，通常认为当NiO从低电阻状态变为高电阻状态时，导电细丝将断裂。然而，我们发现，这种电阻开关有时会在电压和电流驱动的I-V测量期间显示出异常行为。我们使用随机断路器网络模型来解释异常开关行为是如何发生的。我们发现，这种电阻变化可以通过一系列雪崩过程发生，其中导电细丝可以形成也可以破裂。
英文摘要：
We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting filaments will rupture when NiO changes from a low resistance to a high resistance state. However, we found that this resistance switching can sometimes show abnormal behavior during voltage- and current-driven I-V measurements. We used the random circuit breaker network model to explain how abnormal switching behaviors could occur. We found that this resistance change can occur via a series of avalanche processes, where conducting filaments could be formed as well as ruptured.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
