Electric field enhanced electron spin coherence is characterized using time-resolved Faraday rotation spectroscopy in n-type ZnO epilayers grown by molecular beam epitaxy. An in-plane dc electric field E almost doubles the transverse spin lifetime at 20 K, without affecting the effective g-factor. This effect persists till high temperatures, but decreases with increasing carrier concentration. Comparisons of the variations in the spin lifetime, the carrier recombination lifetime and photoluminescence lifetimes indicate that the applied E enhances the radiative recombination rate. All observed effects are independent of crystal directionality and are performed at low magnetic fields (B < 0.2 T).
In this paper, the reported experimental data in [Sci. Rep., 2012, 2, 533] related to electrical transport properties in bulk ZnO, ZnMgO/ZnO, and ZnMgO/ZnO/ZnMgO single and double heterostructures were analyzed quantitatively and the most important scattering parameters for controlling electron concentration and electron mobility were obtained. Treatment of intrinsic mechanisms included polar-optical phonon scattering, piezoelectric scattering and acoustic deformation potential scattering. For extrinsic mechanisms, ionized impurity, dislocation scattering, and strain-induced fields were includ…
The effect of applying an external electric field on doping-induced spin-orbit splitting of the lowest conduction-band states in a bismuth-doped zinc oxide nanowire is studied by performing electronic structure calculations within the framework of density functional theory. It is demonstrated that spin splitting in Bi-doped ZnO nanowires could be tuned and enhanced electrically via control of the strength and direction of the applied electric field, thanks to the nonuniform and anisotropic response of the ZnO:Bi nanowire to external electric fields. The results reported here indicate that a si…
We have investigated the H2 pressure-dependent (from vacuum to 20 bar) current-voltage characteristics of ZnO thin films prepared by spin coating method. The gas pressure effect on conductance (G) was subtracted using He gas. The G increased as applying 2 bar of H2 pressure, and then it monotonously decreased with the further increment of H2 pressure. Using X-ray diffraction patterns and X-ray photoelectron spectroscopy before and after H2 exposure, we found that the H2 spillover effect plays an important role in the variation of G of ZnO film.
Time-resolved optical techniques are used to explore electron spin dynamics in bulk and epilayer samples of n-type ZnO as a function of temperature and magnetic field. The bulk sample yields a spin coherence time T2* of 20 ns at T = 30 K. Epilayer samples, grown by pulsed laser deposition, show a maximum T2* of 2 ns at T = 10 K, with spin precession persisting up to T = 280 K.
Complex impedance spectroscopy data in the frequency range 16Hz < f < 3 MHz at room temperature were acquired on pure ZnO single crystal and thin film. The measured impedance of the ZnO samples shows large changes with time after exposure to or covering them from visible light. At fixed times Cole-Cole-diagrams indicate the presence of a single relaxation process. A simple analysis of the impedance data allows us to obtain two main relaxation times. The behavior for both, ZnO crystal and thin film, is similar but the thin film shows shorter relaxation times. The analysis indicates the existenc…
Cu doped transparent ZnO thin films were spin coated on conductive glass substrates. The samples were subsequently annealed in air for 1 hour at 500 0C in order to form the phase of ZnO. ZnO samples were doped with different Cu molar percentages up to 5%. The impedance and photovoltaic properties of sample were measured. Photocurrent and photovoltage of doped and undoped samples were measured in KI/I2 electrolyte. Adding a trace amount of Cu improved the conducting properties of ZnO samples without changing other basic properties of ZnO. The photocurrent gradually increases with the doping con…
The structure-property relation of nanostructured Al-doped ZnO thin films has been investigated in detail through a systematic variation of structure and morphology, with particular emphasis on how they affect optical and electrical properties. A variety of structures, ranging from compact polycristalline films to mesoporous, hierarchically organized cluster assemblies, are grown by Pulsed Laser Deposition at room temperature at different oxygen pressures. We investigate the dependence of functional properties on structure and morphology and show how the correlation between electrical and opti…
Effect of ambient gases on photoluminescence (PL) and electrical conductivity of films prepared using ZnO nanoparticles (NPs) have been investigated. It is observed that NPs of size below 20 nm kept inside a chamber exhibit complete reduction in their visible PL when oxygen partial pressure of the surrounding gases is decreased by evacuation. However the visible PL from ZnO NPs is insensitive to other major gases present in the ambient air. The rate of change of PL intensity with pressure is inversely proportional to the ambient air pressure and increases when particle size decreases due to th…
A comparative study of wurtzite ZnO doped by rare earth elements (Tm, Yb, Ce) have been investigated using density functional theory (DFT) based on the full-potential linearized augmented plane wave orbital (FP-LAPW) method, as implemented in Wien2K code. The structural parameters were calculated by PBEsol functional and in good agreement with the experimental data. The electronic (density of states, band structure) and optical (absorption coefficient, reflectivity, refraction index) properties were determined by TB-mBJ potential. The rare earth element doped ZnO have a significant impact on t…
We present a versatile, large-scale fabrication method for nanostructured semiconducting junctions. Silicon substrates were processed by femtosecond laser pulses in methanol and a quasi-ordered distribution of columnar nanospikes was formed on the surface of the substrates. A thin (80 nm) layer of ZnO was deposited on the laser-processed silicon surface by pulsed laser deposition, forming a nanostructured p-Si/n-ZnO heterojunction. We characterized the structural, optical, and electrical properties of the heterojunction. Electrical I-V measurements on the nanostructured p-Si/n-ZnO device show …
Neodymium doped Na2O-ZnO-TeO2 (NZT) glasses were prepared by the conventional melt quenching technique. DTA and TG were used to confirmation of glass preparation through the glass transition temperature at 447°C for the glass system. The analysis of FTIR spectra and X-ray diffraction described the nature of the samples were ionic and amorphous respectively. The optical bandgap energy was estimated using absorption spectra and found to be decreased from 2.63eV to 1.32 eV due to the increase of doping concentration. The intensity of the emission spectra was enhanced for the higher concentration …
Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically-aligned La_{2/3}Sr_{1/3}MnO_3:ZnO nanocomposites, in which La_{2/3}Sr_{1/3}MnO_3 (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO a…
We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)-sapphire substrates. Magnetic force microscopy (MFM) and magnetic measurements with SQUID magnetometer show clear ferromagnetic behavior of the films up to room temperature whereas they are antiferromagnetic below 200 K approximately. Temperature dependence of the carrier mobility was determined using Raman line shape analysis of the longitudinal-optical-phonon-plasmon coupled modes. It shows that the microscopic mechanism for ferro…
Vertically aligned ZnO nanotube arrays fabricated on an ITO substrate are found to exhibit strong persistent photoconductivity (PPC) effect and electrically driven conductance switching behavior, though the latter shows a gradual decay from high conductance state to a low conductance state. Unlike the electrical switching, the PPC cannot be reset or reversed by an electrical pulse. Excitation wavelength dependent conductance measurement indicates the presence of the defect localized states (DLS) ~ 240meV above the valence band edge, in support of the hypothesis that the doubly ionization of th…
Laser Annealing of Transparent ZnO Thin Films: A Route to Improve Electrical Conductivity and Oxygen Sensing Capabilities
Instituto de Nanociencia y Materiales de Aragón, CSIC-Universidad de Zaragoza（阿拉贡纳米科学与材料研究所，西班牙科学理事会-萨拉戈萨大学）；Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP（格勒诺布尔阿尔卑斯大学，法国国家科学研究中心，格勒诺布尔理工学院）
Graded Al-doped ZnO layers, constituted by a mesoporous forest like system evolving into a compact transparent conductor, were synthesized by Pulsed Laser Deposition with different morphology to study the correlation with functional properties. Morphology was monitored by measuring the resulting surface roughness and its effects on electrical conductivity (especially carrier mobility, which significantly decreases with increasing roughness) allow to discuss the limitations in conduction mechanisms. Significant changes in light scattering capability due to variations in morphology are also inve…
The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in Zn1-xMnxO type system. Zn1-xMnxO (x = 0.02, 0.04) samples have been synthesized by solid-state reaction method and have been irradiated with 50 MeV Li3+ ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. XRD result shows single phase wurtzite structure for Zn0.98Mn0.02O, whereas for Zn0.96Mn0.04O sample an impurity phase has been f…
The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in which free carrier concentration is very low. For optimized ALD process it can reach the level of 10^15 cm-3, while mobility of electrons is between 20 and 50 cm2/Vs. Electrical parameters of ZnO films deposited by ALD at low temperature regime are appropriate for constructing of the ZnO-based p-n and Schottky junctions. We demonstrate that such junctions are…
We have investigated the electrical conduction processes in as-grown and thermally cycled ZnO single crystal as well as as-grown ZnO polycrystalline films over the wide temperature range 20--500 K. In the case of ZnO single crystal between 110 and 500 K, two types of thermal activation conduction processes are observed. This is explained in terms of the existence of both shallow donors and intermediately deep donors which are consecutively excited to the conduction band as the temperature increases. By measuring the resistivity $ρ(T)$ of a given single crystal after repeated thermal cycling in…
Superlattices provide a great platform for studying coherent transportation of low-frequency phonons, which are the main issues in mastering the manipulation of heat conduction. Studies have shown that the dominating characteristics in the thermal conductivity of superlattice can be adjusted between wave-like and particle-like phonon properties depending on the superlattice period. However, the phonon coherence length and the phonon mean free path from Umklapp processes have not been defined in one superlattice system, and the transition from wave-like and particle-like behavior is not clear t…
Ionic layer epitaxy (ILE) has recently been developed as an effective strategy to synthesize nanometer-thick 2D materials with a non-layered crystal structure, such as ZnO. The packing density of the amphiphilic monolayer is believed to be a key parameter that controls the nanosheet nucleation and growth. In this work, we systematically investigated the growth behavior of single-crystalline ZnO nanosheets templated at the water-air interface by an anionic oleylsulfate monolayer with different packing densities. The thicknesses of ZnO nanosheets were tuned from one unit cell to four unit cells,…
The composites of strontium-doped lanthanum manganite (LSMO) with zinc oxide (ZnO) are candidate materials for energy harvesting by virtue of their magnetic and piezoelectric characteristics. They could be used to harvest energy from stray sources, such as the vibrations and electromagnetic noise from transformers and compressors within electrical grid power stations to power small diagnostic sensors, among other applications. The LSMO/ZnO nanocomposites were made by: (i) milling the two bulk powders and, (ii) a wet chemical process which resulted in core-shell structures. The electrical, piez…
Zinc oxide is a wide-bandgap semiconductor which is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be practically achieved, a thorough, scientific understanding of the various spin transport and relaxation processes undergone in this material is essential. In the present paper we report our investigations into these processes via temperature dependent, non-local Hanle experiments. Epitaxial ZnO thin films were deposited on c-axis sapphire substrates using a pulsed laser deposition technique. Careful structural, optical,…
We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform magneto-transport measurements and find a crossover from weak localization to weak antilocalization effect with increasing gate voltage, which demonstrates that the Rashba spin-orbit coupling is tuned by the gate electrode. The efficiency of the gate tuning of the spin-orbit interaction is higher than those obtained for two-dimensional electron gas, and as high as that for …
Herein we demonstrate the ability to optically tune the mobility of electrically powered Janus particles (JP) that are half coated with various Zinc Oxide (ZnO) semiconducting layers, i.e. polycrystalline, amorphous and amorphous with a SiO2 passivation layer. The ZnO semiconductor photo-response enables increase in its electrical conductivity with light having wavelengths of sufficient photon energy with respect to the semiconductor bandgap. This effect, termed optically modulated electrokinetic propulsion (OMEP), can be harnessed to increase the contrast in polarizability between the dielect…
Transparent conducting oxides (TCOs) play an essential role in modern optoelectronic devices through their combination of electrical conductivity and optical transparency. We review recent progress in our understanding of multi-component TCOs formed from solid-solutions of ZnO, In2O3, Ga2O3 and Al2O3, with a particular emphasis on the contributions of materials modelling, primarily based on Density Functional Theory. In particular, we highlight three major results from our work: (i) the fundamental principles governing the crystal structures of multi-component oxide structures including (In2O3…
The observed correlation of oxygen vacancies and room temperature ferromagnetic ordering in Co doped ZnO1-o nanoparticles reported earlier (Naeem et al Nanotechnology 17, 2675-2680) has been further explored by transport and optical measurements. In these particles room temperature ferromagnetic ordering had been observed to occur only after annealing in forming gas. In the current work the optical properties have been studied by diffuse reflection spectroscopy in the UV-Vis region and the band gap of the Co doped compositions has been found to decrease with Co addition. Reflections minima are…
The attachment of semiconducting nanoparticles to carbon nanotubes is one of the most challenging subjects in nanotechnology. Successful high coverage attachment and control over the charge transfer mechanism and photo-current generation opens a wide field of new applications such as highly effective solar cells and fibre-enhanced polymers. In this work we study the charge transfer in individual double-wall carbon nanotubes highly covered with uniform ZnO nanoparticles. The synthetic colloidal procedure was chosen to avoid long-chained ligands at the nanoparticle-nanotube interface. The result…
Doped ZnO is a promising material for spintronics applications. For such applications, it is important to understand the spin dynamics and particularly the spin coherence of this II-VI semiconductor. The spin lifetime $τ_{s}$ has been measured by optical orientation experiments, and it shows a surprising non-monotonic behavior with temperature. We explain this behavior by invoking spin exchange between localized and extended states. Interestingly, the effects of spin-orbit coupling are by no means negligible, in spite of the relatively small valence band splitting. This is due to the wurtzite …
During the past years there has been renewed interest in the wide-bandgap II-VI semiconductor ZnO, triggered by promising prospects for spintronic applications. First, ferromagnetism was predicted for dilute magnetic doping. In comprehensive investigation of ZnO:Co thin films based on the combined measurement of macroscopic and microscopic properties, we find no evidence for carrier-mediated itinerant ferromagnetism. Phase-pure, crystallographically excellent ZnO:Co is uniformly paramagnetic. Superparamagnetism arises when phase separation or defect formation occurs, due to nanometer-sized met…
This paper addresses the effect of disorder on the carrier transport mechanism of atomic layer deposited ZnO thin films as has been investigated by temperature dependent electrical resistivity measurements in the temperature range of 4.2K to 300K. Films were grown on (0001) sapphire substrate at different substrate temperatures varying from 150 to 350 C. The defects and structural disorder in the films were found to be strongly dependent on their growth temperature. The films grown at 150, 300 and 350 C were found to be semiconductor-like in the whole measurement temperature range of resistivi…
We examine how the photo-induced carriers contribute the thermoelectric transport, i.e. the nature of the photo-Seebeck effect, in the wide-gap oxide semiconductor ZnO for the first time. We measure the electrical conductivity and the Seebeck coefficient with illuminating light. The light illumination considerably changes the Seebeck coefficient as well as the conductivity, which is sensitive to the photon energy of the illuminated light. By using a simple parallel-circuit model, we evaluate the contributions of the photo-induced carriers to the conductivity and the Seebeck coefficient, whose …
In this paper Al doped ZnO (AZO) thin films with 0, 3, 6 and 12 at. % Al concentration were prepared by sol-gel method on glass substrates. The deposited films were annealed at different temperatures of 300, 350, 400, 450 and 500 °C for 1 h in air. X-ray diffraction (XRD) showed wurtzite crystalline structure for the films annealed above 400 °C. The films were subsequently irradiated by beams of excimer (KrF, λ=248 nm) laser. The evolution of crystal structure, surface morphology and optical properties were studied using XRD, filed emission scanning electron microscope (FE-SEM) and UV-Vis spec…
Present paper reports the effect of ZnO additives on humidity and temperature sensing properties of cuprous oxide. The cuprous oxide powder was mixed with 10% and 25% ZnO by weight and these samples were pelletized by using hydraulic pressing machine. The sensing materials were also investigated by Scanning Electron Microscope (SEM) and X-ray Diffraction (XRD). SEM images show morphology and porosity of material. The average particles size of cuprous oxide was found to be 1.2 micron. The sheet like structures of ZnO is evident in micrographs. From XRD all peaks are well identified and crystall…
We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon and we investigate their electrical and optical behavior, demonstrating high sensitivity and broadband operation. Microstructured p-type silicon was obtained by ns-laser irradiation in SF6 gas, which results in the formation of quasi-ordered and uniform microspikes on the silicon surface. The irradiated silicon contains sulfur impurities, which extend its absorbance to the near infrared. A thin film of ZnO was conformally deposited on the microstructured silicon substrates by …
The wide bandgap semiconductor ZnO is interesting for spintronic applications because of its small spin-orbit coupling implying a large spin coherence length. Utilizing vertical spin valve devices with ferromagnetic electrodes (TiN/Co/ZnO/Ni/Au), we study the spin-polarized transport across ZnO in all-electrical experiments. The measured magnetoresistance agrees well with the prediction of a two spin channel model with spin-dependent interface resistance. Fitting the data yields spin diffusion lengths of 10.8nm (2K), 10.7nm (10K), and 6.2nm (200K) in ZnO, corresponding to spin lifetimes of 2.6…
We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T2, of 0.3 ms is found for profiles peaking 50 nm below a Si/SiO2 interface, increasing to 0.75 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum informa…
Time-resolved magneto-optics is a well-established optical pump probe technique to generate and to probe spin coherence in semiconductors. By this method, spin dephasing times T_2^* can easily be determined if their values are comparable to the available pump-probe-delays. If T_2^* exceeds the laser repetition time, however, resonant spin amplification (RSA) can equally be used to extract T_2^*. We demonstrate that in ZnO these techniques have several tripping hazards resulting in deceptive values for T_2^* and show how to avoid them. We show that the temperature dependence of the amplitude ra…
Flexible and transparent electronics presents a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc.Zinc oxide (ZnO) and related materials are the most commonly used inorganic semiconductors in flexible and transparent devices, owing to their high electrical performance, together with low processing temperature and good optical transparency.In this paper, we review recent advances in flexible and transparent thin-film transistors (TFTs) based on ZnO and related material…
Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100 microseconds: 50 times longer than the previous maximum for electrically-detected spin readout experiment…
Deep Spin Defects in Zinc Oxide for High-Fidelity Single-Shot Readout
University of Wisconsin-Madison（威斯康星大学麦迪逊分校）；Sungkyunkwan University（成均馆大学）；Ajou University（亚洲大学）；University of California, Santa Cruz（加州大学圣克鲁兹分校）；University of Washington（华盛顿大学）
The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial thin films with 0<=x<=0.9 on MgO(001) substrates with excellent structural properties both in pure Ar atmosphere and an Ar/O2 mixture by laser molecular beam epitaxy. We find that the electrical conductivity and the saturation magnetization can be tuned over a wide range during growth. Our extensive characterization of the films provides a clear picture of …
Minute-long quantum coherence enabled by electrical depletion of magnetic noise
University of Chicago（芝加哥大学）；Argonne National Laboratory（阿贡国家实验室）；Q-NEXT, Argonne National Laboratory（Q-NEXT，阿贡国家实验室）；Joint Center for Quantum Information and Computer Science, University of Maryland（马里兰大学量子信息与计算机科学联合中心）；National Institutes for Quantum and Radiological Science and Technology（国立研究开发法人量子放射线医学科学研究机构）；Linköping University（林雪平大学）；Tohoku University（东北大学）；University of Illinois Urbana-Champaign（伊利诺伊大学厄巴纳-香槟分校）
We investigate the minimum conductivity of graphene within a quasiclassical approach taking into account electron-hole coherence effects which stem from the chiral nature of low energy excitations. Relying on an analytical solution of the kinetic equation in the electron-hole coherent and incoherent cases we study both the electrical and thermal conductivity whose relation fullfills Wiedemann-Franz law. We found that the most of the previous findings based on the Boltzmann equation are restricted to only high mobility samples where electron-hole coherence effects are not sufficient.
We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.
A pair of coupled dots with one electron in each dot can provide improvements in spin coherence, particularly at an electrical bias called the sweet spot, but few measurements have been performed on self-assembled dots in this regime. Here, we directly measure the $T_2^*$ coherence time of the singlet-triplet states in this system as a function of bias and magnetic field, obtaining a maximum $T_2^*$ of 60 ns, more than an order of magnitude higher than an electron spin in a single quantum dot. Our results uncover two main dephasing mechanisms: electrical noise away from the sweet spot, and a m…
High-spin paramagnetic manganese defects in polar piezoelectric zinc oxide exhibit a simple almost axial anisotropy and phase coherence times of the order of a millisecond at low temperatures. The anisotropy energy is tunable using an externally applied electric field. This can be used to control electrically the phase of spin superpositions and to drive spin transitions with resonant microwave electric fields.
The electrical and structural characteristics of 50 nm zinc oxide (ZnO) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors subjected to proton irradiation at different temperatures are reported and compared. We irradiated the devices with 200 keV protons to a fluence of 1016 cm-2. Examination of the X-ray diffraction (XRD) rocking curves indicates a strongly preferred (100) orientation for the grains of the as-deposited film, with decreases in crystal quality for all irradiated samples. In addition, peak shifts in XRD and Raman spectra of the control sample relative to well-known …
We study single- and multi-quantum transitions of the nuclear spins of ionized arsenic donors in silicon and find quadrupolar effects on the coherence times, which we link to fluctuating electrical field gradients present after the application of light and bias voltage pulses. To determine the coherence times of superpositions of all orders in the 4-dimensional Hilbert space, we use a phase-cycling technique and find that, when electrical effects were allowed to decay, these times scale as expected for a field-like decoherence mechanism such as the interaction with surrounding $^{29}$Si nuclea…
We imaged the transport of current-induced spin coherence in a two-dimensional electron gas confined in a triple quantum well. Nonlocal Kerr rotation measurements, based on the optical resonant amplification of the electrically-induced polarization, revealed a large spatial variation of the electron g factor and the efficient generation of a current controlled spin-orbit field in a macroscopic Hall bar device. We observed coherence times in the nanoseconds range transported beyond half-millimeter distances in a direction transverse to the applied electric field. The measured long spin transpor…
Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricate diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge state control and broad Stark shift tuning exceeding 850 GHz. Surprisingly, we show that charge depletion results in a narrowing of the optical linewidths …
