自组装垂直取向La_{2/3} Sr_{1/3} MnO_3：ZnO-nanopillar复合材料的电流感应磁滞
Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites
摘要：
磁阻随机存取存储器（MRAM）有望成为下一代信息存储设备。然而，在它成为广泛使用的存储解决方案之前，许多材料挑战仍未解决。其中，迫切需要的是确定一种材料系统，适合于缩小规模，并与低功耗逻辑应用兼容。自组装垂直取向La_{2/3} Sr_{1/3} MnO_3：ZnO纳米复合材料，其中La_{2/3} Sr_{1/3} MnO_3（LSMO）基质和ZnO纳米柱形成缠结结构，在LSMO和ZnO垂直界面之间发生位置匹配生长，通过结合其优异的电、磁（B）和光学性能，可能提供新的MRAM应用。在本文中，我们展示了在这些纳米柱复合材料的磁阻测量电流感生磁滞的结果。我们观察到，当电流水平较低时，例如，1 μ A，磁阻显示出线性的，负的，非滞后的B场依赖性。令人惊讶的是，当使用大电流时，I > 10 μ A，当B场在上下方向上扫描时观察到滞后行为。这种滞后现象随着样品温度的升高而减弱。一个可能的自旋阀机制有关的电流感应磁滞的建议和讨论。
英文摘要：
Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically-aligned La_{2/3}Sr_{1/3}MnO_3:ZnO nanocomposites, in which La_{2/3}Sr_{1/3}MnO_3 (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic (B), and optical properties. In this paper, we show the results of electrical current induced magnetic hysteresis in magneto-resistance measurements in these nano-pillar composites. We observe that when the current level is low, for example, 1 uA, the magneto-resistance displays a linear, negative, non-hysteretic B field dependence. Surprisingly, when a large current is used, I > 10 uA, a hysteretic behavior is observed when the B field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. A possible spin-valve mechanism related to this electrical current induced magnetic hysteresis is proposed and discussed.
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