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arXiv 0803.2791astro-ph
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C型shock waves的SiO谱线发射:星际喷流和外流

SiO line emission from C-type shock waves : interstellar jets and outflows

A. Gusdorf, S. Cabrit, D. R. Flower, G. Pineau des Forets

摘要:

我们研究了SiO的产生在气相中的分子流出,通过溅射的含Si材料在耐火颗粒芯,这是采取橄榄石;我们还计算了旋转线光谱的SiO。溅射是由中性粒子在稳态C型冲击波中以双极扩散的速度撞击带电晶粒所驱动的。SiO分子的发射是通过LVG代码计算的。已经生成了模型网格。我们将我们的结果与早期的研究(Schilke et al. 1997)进行了比较。带电颗粒和中性流体之间的耦合的处理的改进导致更窄的冲击波和更低分数的Si被释放到气相中。更现实的假设有关的初始分数丰度的O2导致SiO的形成被推迟,使它发生在冷,致密的postshock流。与最近观察到的SiO线强度在L1157和L1448分子流出得到很好的协议。推断的温度,不透明度,和SiO柱密度在发射区显着不同的LVG `板'模型的装置估计。推导了SiO的丰度分数。观察到的线轮廓比预测的要宽,这意味着在光束中有多个未解决的激波区域。

英文摘要:

We study the production of SiO in the gas phase of molecular outflows, through the sputtering of Si--bearing material in refractory grain cores, which are taken to be olivine; we calculate also the rotational line spectrum of the SiO. The sputtering is driven by neutral particle impact on charged grains, in steady--state C-type shock waves, at the speed of ambipolar diffusion. The emission of the SiO molecule is calculated by means of an LVG code. A grid of models has been generated. We compare our results with those of an earlier study (Schilke et al. 1997). Improvements in the treatment of the coupling between the charged grains and the neutral fluid lead to narrower shock waves and lower fractions of Si being released into the gas phase. More realistic assumptions concerning the initial fractional abundance of O2 lead to SiO formation being delayed, so that it occurs in the cool, dense postshock flow. Good agreement is obtained with recent observations of SiO line intensities in the L1157 and L1448 molecular outflows. The inferred temperature, opacity, and SiO column density in the emission region differ significantly from those estimated by means of LVG `slab' models. The fractional abundance of SiO is deduced. Observed line profiles are wider than predicted and imply multiple, unresolved shock regions within the beam.

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