Magneto-gyrotropic photogalvanic effects in quantum wells are reviewed. We discuss experimental data, results of phenomenological analysis and microscopic models of these effects. The current flow is driven by spin-dependent scattering in low-dimensional structures gyrotropic media resulted in asymmetry of photoexcitation and relaxation processes. Several applications of the effects are also considered.
The magneto-gyrotropic photogalvanic and spin-galvanic effects are observed in (0001)-oriented GaN/AlGaN heterojunctions excited by terahertz radiation. We show that free-carrier absorption of linearly or circularly polarized terahertz radiation in low-dimensional structures causes an electric photocurrent in the presence of an in-plane magnetic field. Microscopic mechanisms of these photocurrents based on spin-related phenomena are discussed. Properties of the magneto-gyrotropic and spin-galvanic effects specific for hexagonal heterostructures are analyzed.
We show that free-carrier (Drude) absorption of both polarized and unpolarized terahertz radiation in quantum well (QW) structures causes an electric photocurrent in the presence of an in-plane magnetic field. Experimental and theoretical analysis evidences that the observed photocurrents are spin-dependent and related to the gyrotropy of the QWs. Microscopic models for the photogalvanic effects in QWs based on asymmetry of photoexcitation and relaxation processes are proposed. In most of the investigated structures the observed magneto-induced photocurrents are caused by spin-dependent relaxa…
We report on the observation of nonlinear magneto-gyrotropic photogalvanic effect in HgTe/HgCdTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the heterostructures is shown to cause a dc electric current in the presence of an in-plane magnetic field. A cubic in magnetic field component of the photocurrent is observed in quantum wells with the inverted band structure only. The experimental data are discussed in terms of both the phenomenological theory and microscopic models.
We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé-factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most quantum well widths, the PGEs are mainly driven by spin-related mechanisms, which results in a photocurrent proportional to the g* factor. In structures with a vanishingly small g* factor, however, linear and …
Electrical control of the orbital degrees of freedom is an important area of research in the emerging field of "orbitronics." Orbital {\it gyrotropic} magneto-electric effect (OGME) is the generation of an orbital magnetization in a nonmagnetic metal by an applied electric field. Here, we show that strain induces a large GME in the monolayer Nb$X_2$ ($X =$ S, Se) normal to the plane, primarily driven by the orbital moments of the Bloch bands as opposed to the conventional spin magnetization, without any need for spin-orbit coupling. The key physics is captured within an effective two-band vall…
We report on the magneto-gyrotropic photogalvanic effect (MPGE) in n-doped (110)-grown GaAs/AlGaAs quantum-well (QW) structures caused by free-carrier absorption of terahertz radiation in the presence of a magnetic field. The photocurrent behavior upon variation of the radiation polarization state, magnetic field orientation and temperature is studied. The developed theory of MPGE describes well all experimental results. It is demonstrated that the structure inversion asymmetry can be controllably tuned to zero by variation of the delta-doping layer positions. For the in-plane magnetic field t…
The magnetoelectric effect (or Edelstein effect) in noncentrosymmetric superconductors states that a supercurrent can induce spin magnetization. This is an intriguing phenomenon which has potential applications in superconducting spintronic devices. However, the original Edelstein effect only applies to superconductors with polar point group symmetry. In recent years, many new noncentrosymmetric superconductors have been discovered, such as superconductors with chiral lattice symmetry and superconducting transition metal dichalcogenides with various lattice structures. In this Rapid Communicat…
This article reviews spin-dependent transport of carriers in homogenous three-dimensional and two-dimensional semiconductors. We begin with a discussion of optical orientation of electron spins, which allows both the creation and detection of spin-polarized carriers in semiconductors. Then we review non-equilibrium spin flow including spin drift and diffusion caused by electric fields and concentration gradients. A controlled spin precession is possible both in external magnetic fields and in effective magnetic fields due to a broken inversion symmetry. Although the Coulomb interaction does no…
We demonstrate theoretically that in gyrotropic semiconductors and semiconductor nanosystems the Brownian motion of electrons results in temporal fluctuations of the polarization plane of light passing through or reflected from the structure, i.e., in stochastic Faraday or Kerr rotation effects. The theory of the effects is developed for a number of prominent gyrotropic systems such as bulk tellurium, ensembles of chiral carbon nanotubes, and GaAs-based quantum wells of different crystallographic orientations. We show that the power spectrum of these fluctuations in thermal equilibrium is prop…
The classification of magnetopolarons in semiconductor quantum wells (QW) is represented. Magnetopolarons appear due to the Johnson - Larsen effect. The wave functions of usual and combined magnetopolarons are obtained by the diodanalization of the Schrodinger equation.
Gyrotropic properties of multiple quantum well structures are studied theoretically. Symmetry analysis is performed yielding the gyrotropy tensor components for structures grown along [001], [110] and [311] crystallographic directions. Angular dependences of circular dichroism and natural optical activity signals are established. Phenomenological model and microscopic theory based on spin-orbit splitting of size-quantized subbands are developed for photon energies close to the energy of the intersubband optical transition. Magneto-spatial dispersion effects arising from the diamagnetic shift o…
In this paper we review both theoretical and experimental studies on spin-related photogalvanic effects. A short phenomenological introduction is followed by the discussion of the circular photogalvanic effect, the direct and inverse spin-galvanic effects and the trembling motion of spin-polarized electrons. Then we consider the pure spin currents and magneto-gyrotropic photocurrents. Finally, we discuss the spin-dependent photocurrents in topological insulators and Weyl semimetals.
Semiconductor-metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. In this paper, we analyze this effect by means of a model based on the finite element method and compare our results with experimental data. In particular, we investigate the important effect of the contact resistance $ρ_c$ between the semiconductor and the metal on the EMR effect. Introducing a realistic $ρ_c=3.5\times 10^{-7} Ω{\rm cm}^2$ in our model we find that at room temperature this reduces the EMR by 30% if compared to an anal…
We show that the magnetoplasmon collective modes in quasi-two-dimensional semiconductor quantum dots can be parametrically amplified by periodically modulating the magnetic field perpendicular to the nanostructure. The two magnetoplasmon modes are excited and amplified simultaneously, leading to an exponential growth of the number of bosonic excitations in the system. We further demonstrate that damping mechanisms as well as anharmonicities in the confinement of the quantum dot lead to a saturation of the parametric amplification. This work constitutes a first step towards parametric amplifica…
The wavelength and the propagation length of the edge magnetoplasmons, running along the edge of a two-dimensional electron layer in a semiconductor quantum-well structure are theoretically studied as a function of frequency, magnetic field, electron density, mobility, and geometry of the structure. The results are intended to be used for analysis and optimization of operation of recently invented quantum-well microwave spectrometers operating at liquid-nitrogen temperatures (I. V. Kukushkin {\em et al}, Appl. Phys. Lett. {\bf 86}, 044101 (2005)).
We introduce a spin-orbit assisted electron-phonon (e-ph) coupling mechanism for carriers in semiconductor quantum wells and predict qualitatively the form and shape of anticrossings between the cyclotron resonance (CR) and optical (LO and TO) phonons. Since this e-ph interaction involves the electron spin it makes the predicted TO-CR anticrossing dependent on the filling factor and therefore on the polarization of the 2D electron gas in the quantum well.
Light reflection and absorption spectra by a semiconductor quantum well (QW) , which width is comparable to a light wave length of stimulating radiation, are calculated. A resonance with two close located exited levels is considered. These levels can arise due to splitting of an energy level of an electron-hole pair (EHP) due to magnetopolaron effect, if the QW is in a quantizing magnetic field directed perpendicularly to the QW plane. It is shown that unlike a case of narrow QWs light reflection and absorption depend on a QW width $d$. The theory is applicable at any ratio of radiative and no…
In a thin strip of a two-dimensional semiconductor electronic system, spin-orbit coupling may be induced near both edges of the strip due to the substantial spatial variation of the confining potential in the boundary regions. In this paper we show that, in the presence of boundary-confinement induced spin-orbit coupling, a longitudinal charge current circulating through a 2D semiconductor strip may cause \textit{strong} non-equilibrium spin accumulation near both edges of the strip. The spins will be polarized along the normal of the 2DEG plane but in opposite directions at both edges of the …
Electrostatic charges placed near the interface between ordinary and topological insulators induce magnetic fields, through the so-called topological magnetoelectric effect. Here, we present a numerical implementation of the associated Maxwell equations. The resulting model is simple, fast and quantitatively as accurate as the image charge method, but with the advantage of providing easy access to elaborate geometries when pursuing specific effects. The model is used to study how magnetoelectric fields are influenced by the dimensions and the shape of the most common semiconductor nanostructur…
We perform a magneto-infrared spectroscopy study of the semiconductor to semimetal transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show that owing to the low carrier density of our samples (approaching the intrinsic limit), the magneto-absorption spectra evolve from a single cyclotron resonance peak in the normal state to multiple absorption peaks in the inverted state with distinct magnetic field dependence. Using an eight-band Pidgeon-Brown model, we explain all the major absorption peaks observed in our experiment. We demonstrate that the semiconductor…
We have numerically solved the Hamiltonian of an electron in a semiconductor double ring subjected to the magnetic flux and Rashba spin-orbit interaction. It is found that the Aharonov-Bohm energy spectrum reveals multi-zigzag periodic structures. The investigations of spin-dependent electron dynamics via Rabi oscillations in two-level and three-level systems demonstrate the possibility of manipulating quantum states. Our results show that the optimal control of photon-assisted inter-ring transitions can be achieved by employing cascade-type and $Λ$-type transition mechanisms. Under chirped pu…
Cooperative spontaneous recombination (superfluorescence) of electron-hole plasmas in semiconductors has been a challenge to observe due to ultrafast decoherence. We argue that superfluorescence can be achieved in quantum-confined semiconductor systems and present experimental evidence for superfluorescence from high-density photoexcited electron-hole plasmas in quantum wells under high magnetic fields (> 20 T). At a critical magnetic field strength and excitation fluence, we observe a clear transition in the band-edge photoluminescence from omnidirectional output to a randomly directed but hi…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the non-magnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the non-magnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.
We consider a line-shape of magnetoexciton photoluminescence from quantum wells when the disorder is sufficiently small. In this case the phonon-assisted optical transitions become important for the line formation. We study both inter-band and intra-band excitons. For inter-band excitons the width of a single peak emission line is calculated as a function of temperature and quantum well width. For intra-band excitons the double peak of the emission line is predicted when the electron filling factor is odd and greater or equal to three. In the latter case the lowest magnetoexciton dispersion cu…
A recent theory of magnetoresistance in positionally disordered organic semiconductors is extended to include exchange and dipolar couplings between polarons. Analytic results are discovered when the hyperfine, exchange, and dipolar interactions have little time to operate between hopping events. We find an angle-of-field dependence of the magnetoresistance that agrees with previous experiments and numerical simulations. In addition we report new magnetoresistive behavior that critically depends upon the amount of anisotropy in the dipolar interaction.
We describe recent experimental efforts to perform polarization-resolved optical spectroscopy of monolayer transition-metal dichalcogenide semiconductors in very large pulsed magnetic fields to 65 tesla. The experimental setup and technical challenges are discussed in detail, and temperature-dependent magneto-reflection spectra from atomically thin tungsten disulphide (WS$_2$) are presented. The data clearly reveal not only the valley Zeeman effect in these 2D semiconductors, but also the small quadratic exciton diamagnetic shift from which the very small exciton size can be directly inferred.…
We reconsider the theory of magnetoresistance in hopping semiconductors. First, we have shown that the random potential of the background impurities affects significantly preexponential factor of the tunneling amplitude which becomes to be a short-range one in contrast to the long-range one for purely Coulomb hopping centers. This factor to some extent suppresses the negative interference magnetoresistance and can lead to its decrease with temperature decrease which is in agreement with earlier experimental observations. We have also extended the theoretical models of positive spin magnetoresi…
We have studied the electron transport in SiO${}_2$(Co)/GaAs and SiO${}_2$(Co)/Si heterostructures, where the SiO${}_2$(Co) structure is the granular SiO${}_2$ film with Co nanoparticles. In SiO${}_2$(Co)/GaAs heterostructures giant magnetoresistance effect is observed. The effect has positive values, is expressed, when electrons are injected from the granular film into the GaAs semiconductor, and has the temperature-peak type character. The temperature location of the effect depends on the Co concentration and can be shifted by the applied electrical field. For the SiO${}_2$(Co)/GaAs heterost…
We present a theory of organic magnetoresistance (OMR) based on the quenching of the quantum correlation between the carrier's spin and its local environment when the incoherent hopping takes place. We prove that this process contributes a spin-dependent prefactor to the attempt-to-escape frequency in the hopping rate, with its value modulated by the magnetic field. The resulting OMR exhibits a positive Lorentzian saturation component and a negative small-field component, which are independent of model parameters. These behaviors, with their isotope effects, are in good agreement with experime…
Beginning with the 'conventional' two-dimensional (2D) quantum wells (QWs) based on III-V and II-VI semiconductors in the 1970s, to the recent atomically-thin sheets of van der Waals materials such as 2D semiconducting transition metal dichalcogenides (TMDCs) and 2D magnets, the research in 2D materials is continuously evolving and providing new challenges. Magnetooptical spectroscopy has played a significant role in this area of research, both from fundamental physics and technological perspectives. A major challenge in 2D semiconductors such as TMDCs is to understand their spin-valley-resolv…
We present a theoretical study of the electronic thermoelectric power of a semiconductor parabolic quantum well in a magnetic field. The case of a longitudinal magnetic field, with respect to the temperature gradient, has been considered. The calculations were carried out taking into account spin-splitting of the dimensionally quantized electronic energy levels. It has been shown that in the region of strong confinement the thermoelectric power decreases with increasing magnetic field, which is related to the downward shift of the lower Zeeman-split spin subband.
We report 65 tesla magneto-absorption spectroscopy of exciton Rydberg states in the archetypal monolayer semiconductor WSe$_2$. The strongly field-dependent and distinct energy shifts of the 2s, 3s, and 4s excited neutral excitons permits their unambiguous identification and allows for quantitative comparison with leading theoretical models. Both the sizes (via low-field diamagnetic shifts) and the energies of the $ns$ exciton states agree remarkably well with detailed numerical simulations using the non-hydrogenic screened Keldysh potential for 2D semiconductors. Moreover, at the highest magn…
We present a theoretical study of the infrared magneto-optical properties of ferromagnetic (III,Mn)V semiconductors. Our analysis combines the kinetic exchange model for (III,Mn)V ferromagnetism with Kubo linear response theory and Born approximation estimates for the effect of disorder on the valence band quasiparticles. We predict a prominent feature in the ac-Hall conductivity at a frequency that varies over the range from 200 to 400 meV, depending on Mn and carrier densities, and is associated with transitions between heavy-hole and light-hole bands. In its zero frequency limit, our Hall c…
Superconductor films on semiconductor substrates draw much attention recently since the derived superconductor-based electronics have been shown promising for future data process and storage technologies. By growing atomically uniform single-crystal epitaxial Pb films of several nanometers thick on Si wafers to form a sharp superconductor-semiconductor heterojunction, we have obtained an unusual giant magnetoresistance effect when the Pb film is superconducting. In addition to the great fundamental interest of this effect, the simple structure and compatibility and scalability with current Si-…
