本文研究了低RE（La，Ce，Pr）含量的高$T_c$超导化合物Y $_{1-x}$ RE $_{x}$ Ba $_{2}$ Cu $_{3}$ O $_{7-δ}$的晶粒内钉扎。磁性和输运测量表明，钉扎是最大的浓度的异价稀土，使杂质离子之间的平均距离在平面的稀土元素接近的Abrikosov涡旋的直径在YBCO。
英文摘要：
The intragrain pinning in high-$T_c$ superconductor compounds Y$_{1-x}$RE$_{x}$Ba$_{2}$Cu$_{3}$O$_{7-δ}$ with low concentration of RE (La, Ce, Pr) was investigated. Magnetic and transport measurements reveal that the pinning is maximal for the concentration of heterovalent RE such that the average distance between the impurity ions in the plane of rare-earth elements close to the diameter of Abrikosov vortices in YBCO.
We have previously shown for powders that Mo substitution into the CuO chains of YBa2Cu3O7 can create effective pinning centres which significantly increase the critical current density (j_c) in 7 T field by a factor of 4 and 10 at 50 and 60 K, respectively. The present work reports on the influence of the Mo substitution and high-pressure oxygen annealing on the pinning properties and critical currents of YBa_2Cu_{3-x}Mo_xO_{7-d} by comparing pure (x = 0, d > 0) and substituted (x = 0.03, d < 0) single crystals. Pinning properties have been investigated by measurements of magnetization loops …
Disorder, critical currents, and vortex pinning energies in isovalently substituted BaFe$_{2}$(As$_{1-x}$P$_{x}$)$_{2}$
我们提出了一个全面的概述的涡旋钉扎在单晶体的同质取代铁基超导体BaFe $_{2}$（As $_{1-x}$ P $_{x}$）$_{2}$，一种材料，有资格作为一个典型的清洁超导体，只包含稀疏的强点状钉[在意义上的C. J.范德贝克{ \em等人}，B { \bf 66}，024523（2002）]。名义上相似的组合物的临界电流值变化很大，表明磁通钉扎是外在的起源。涡旋配置，使用Bitter装饰方法成像，显示比以前观察到的电荷掺杂的Ba（Fe $_{1-x}$ Co $_{x}$）$_{2}$ As $_{2}$单晶的密度波动小。分析表明，钉扎力和能量分布依赖于P含量$x$。然而，它们总是比Ba（Fe $_{1-x}$ Co $_{x}$）$_{2}$ As $_{2}$窄得多，这一结果归因于BaFe $_{2}$（As $_{1-x}$ P $_{x}$）$_{2}$中接近$T_{c}$时超流密度的温度依赖性较弱。临界电流密度测量和钉扎力分布独立地产生有效钉扎中心之间的平均距离$\bar{\mathcal L} \sim 90$ nm，随着P含量的增加而增加。这种演变可以被理解为是伦敦渗透深度的P依赖性的结果。进一步的显着特点是一个广泛的涡流自由的“迈斯纳带”，观察过掺杂晶体的边缘，和特征链状的旋涡安排，观察在所有级别的P-取代。
Fluorine-substitution-dependent phase diagram and superconducting properties of Sm-based oxypnictides synthesized by a high-pressure growth technique
Institute of High Pressure Physics (IHPP), Polish Academy of Sciences（波兰科学院高压物理研究所）；Institute of Physics, Polish Academy of Sciences（波兰科学院物理研究所）；National Centre for Nuclear Research（国家核研究中心）；Faculty of Physics, Warsaw University of Technology（华沙理工大学物理学院）；Core Electronics Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)（产业技术综合研究所核心电子技术研究所）
