A first-principles study of the electronic polarization of BN and AlN nanotubes and their graphitic sheets under an external electric field has been performed. We found that the polarization per atom of zigzag nanotubes increases with decreasing diameter while that of armchair nanotubes decreases. The variation of the polarization is related to the exterior angle of the bonds around the B or Al atoms rather than that around the N atoms. The increase in the polarization of the zigzag nanotubes with decreasing diameter is caused by the large variation of the exterior angle when they are wrapped into the tubular form. On the other hand, the decrease in the bond length results in the weak polarization of thin armchair nanotubes.
Substrate and nanotube polarization are shown to change qualitatively a nanotube bandstructure. The effect is studied in a linear approximation in an external potential which causes the changes. A work function difference between the nanotube and gold surface is estimated to be large enough to break the band symmetry and lift a degeneracy of a lowest but one subband of a metallic nanotube. This subband splitting for [10,10] nanotube is about 50 meV in absence of other external potential.
Ab initio calculations of the spontaneous polarization and piezoelectric properties of boron nitride nanotubes show that they are excellent piezoelectric systems with response values larger than those of piezoelectric polymers. The intrinsic chiral symmetry of the nanotubes induces an exact cancellation of the total spontaneous polarization in ideal, isolated nanotubes of arbitrary indices. Breaking of this symmetry by inter-tube interaction or elastic deformations induces spontaneous polarization comparable to those of wurtzite semiconductors.
Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires on SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter a…
Unusual physical properties of single-wall carbon nanotubes have started a search for similar tubular structures of other elements. In this paper, we present a theoretical analysis of single-wall nanotubes of silicon and group III-V compounds. Starting from precursor graphene-like structures we investigated the stability, energetics and electronic structure of zigzag and armchair tubes using first-principles pseudopotential plane wave method and finite temperature ab-initio molecular dynamics calculations. We showed that (n,0) zigzag and (n,n) armchair nanotubes of silicon having n > 6 are sta…
The three-fold symmetry of planar boron nitride, the III-V analog to graphene, prohibits an electric polarization in its ground state, but this symmetry is broken when the sheet is wrapped to form a BN nanotube. We show that this leads to an electric polarization along the nanotube axis which is controlled by the quantum mechanical boundary conditions on its electronic states around the tube circumference. Thus the macroscopic dipole moment has an {\it intrinsically nonlocal quantum} mechanical origin from the wrapped dimension. We formulate this novel phenomenon using the Berry's phase approa…
We report on helicity sensitive photovoltaic terahertz radiation response of a carbon nanotube made in a conguration of a field effect transistor. We find that the magnitude of the rectified voltage is different for clockwise and anticlockwise circularly polarized radiation. We demonstrate that this effect is a fingerprint of the plasma waves interference in the transistor channel. We also find that that the presence of the helicity- and phase-sensitive interference part of the photovoltaic response is a universal phenomenon which is obtained in the systems of different dimensionality with dif…
Recently, it was suggested that the polarization dependence of light absorption to a single-walled carbon nanotube is altered by carrier doping. We specify theoretically the doping level at which the polarization anisotropy is reversed by plasmon excitation. The plasmon energy is mainly determined by the diameter of a nanotube, because pseudospin makes the energy independent of the details of the band structure. We find that the effect of doping on the Coulomb interaction appears through the screened exchange energy, which can be observed as changes in the absorption peak positions. Our result…
In this paper we study the size effects of the ferroelectric nanotube phase diagrams and polar properties allowing for effective surface tension and depolarization field influence. The approximate analytical expression for the paraelectric-ferroelectric transition temperature dependence on the radii of nanotube, polarization gradient coefficient, extrapolation length, surface tension and electrostriction coefficient was derived. It was shown that the transition temperature could be higher than the one of the bulk material for negative electrostriction coefficient. Therefore we predict conserva…
To optimize the performance of multifunctional carbon nanotube-ferroelectric devices, it is necessary to understand both the polarization and charge dynamics effects on their transconductance. Directly comparing ferroelectric Pb(Zr0.2Ti0.8)O3 and dielectric SrTiO3 field effect transistors, we show that the two effects strongly compete, with transient charge dynamics initially masking up to 40% of the ferroelectric field effect. For applications, it is therefore crucial to maximize the quality of the ferroelectric film and the interface with the carbon nanotube to take full advantage of the swi…
Using Landau-Ginzburg-Devonshire theory we study the complex interplay between structural antiferrodistortive order parameter (oxygen octahedron rotations), polarization and magnetization in EuxSr1-xTiO3 nanotubes and nanowires. We calculated EuxSr1-xTiO3 bulk and nanosystem phase diagrams, which include the antiferrodistortive, ferroelectric, ferromagnetic and antiferromagnetic phases. Our calculation shows the presence of "triple" antiferrodistortive-ferroelectric-ferromagnetic phases for EuxSr1-xTiO3 nanowires and nanotubes. presents interest for fundamental study and can be important for t…
Understanding the kinetic selectivity of carbon nanotube growth at the scale of individual nanotubes is essential for the development of high chiral selectivity growth methods. Here we demonstrate that homodyne polarization microscopy can be used for high-throughput imaging of long individual carbon nanotubes under real growth conditions (at ambient pressure, on a substrate), and with sub-second time resolution. Our in situ observations on hundreds of individual nanotubes reveal that about half of them grow at a constant rate all along their lifetime while the other half exhibits stochastic ch…
We present it ab-initio calculations of the non-resonant Raman spectra of zigzag and armchair BN nanotubes. In comparison, we implement a generalized bond-polarizability model where the parameters are extracted from first-principles calculations of the polarizability tensor of a BN sheet. For light-polarization along the tube-axis, the agreement between model and it ab-initio spectra is almost perfect. For perpendicular polarization, depolarization effects have to be included in the model in order to reproduce the it ab-initio Raman intensities.
Nitrogen-doped carbon nanotubes can provide reactive sites on the porphyrin-like defects. It's well known that many porphyrins have transition metal atoms, and we have explored transition metal atoms bonded to those porphyrin-like defects in N-doped carbon nanotubes. The electronic structure and transport are analyzed by means of a combination of density functional theory and recursive Green's functions methods. The results determined the Heme B-like defect (an iron atom bonded to four nitrogens) as the most stable and with a higher polarization current for a single defect. With randomly posit…
We have performed polarization-dependent ultrafast pump-probe spectroscopy of a film of aligned single-walled carbon nanotube bundles. By taking into account imperfect nanotube alignment as well as anisotropic absorption cross sections, we quantitatively determined distinctly different photo-bleaching dynamics for polarizations parallel and perpendicular to the tube axis. For perpendicular polarization, we observe a slow (1.0-1.5 ps) relaxation process, previously unobserved in randomly-oriented nanotube bundles. We attribute this slower dynamics to the excitation and relaxation of surface pla…
Flexoelectricity is the polar response of an insulator to strain gradients such as bending. While the size dependence of this effect makes it weak in bulk systems in comparison to piezoelectricity, it suggests that it plays a bigger role in nanoscale systems such as thin films and nanotubes (NTs). In this paper we demonstrate using first-principles calculations that the walls of carbon nanotubes (CNTs) and transition metal dichalcogenide nanotubes (TMD NTs) are polarized in the radial direction, the strength of the polarization increasing as the size of the NT decreases. For CNTs and TMD NTs w…
The elasticity and piezoelectricity of zinc oxide (ZnO) crystals and single layers are investigated from the first-principles calculations. It is found that a ZnO thin film less than three Zn-O layers prefers a planar graphite-like structure to the wurtzite structure. ZnO single layers are much more flexible than graphite single layers in the elasticity and stronger than boron nitride single layers in the piezoelectricity. Single-walled ZnO nanotubes (SWZONTs) can exist in principle because of their negative binding energy. The piezoelectricity of SWZONTs depends on their chirality. For most Z…
We study heat dissipation from a (10,10) CNT to a SiO2 substrate using equilibrium and non-equilibrium classical molecular dynamics. The CNT-substrate thermal boundary conductance (TBC) is computed both from the relaxation time of the CNT-substrate temperature difference, and from the time autocorrelation function of the interfacial heat flux at equilibrium (Green-Kubo relation). The power spectrum of interfacial heat flux fluctuation and the time evolution of the internal CNT energy distribution suggest that: 1) thermal coupling is dominated by long wavelength phonons between 0-10 THz, 2) hig…
The spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry phase approach to polarization in solids. The piezoelectric constants are found to be up 10 times larger than in conventional III-V's and II-VI's, and comparable to those of ZnO. Further properties at variance with those of conventional III-V compounds are the sign of the piezoelectric constants (positive as in II-VI's) and the very large spontaneous polarization.
We have used a femtosecond pump-probe impulsive Raman technique to explore the polarization dependence of coherent optical phonons in highly-purified and aligned semiconducting single-wall carbon nanotubes (SWCNTs). Coherent phonon spectra for the radial breathing modes (RBMs) exhibit a different monochromatic frequency between the film and solution samples, indicating the presence of differing exciton excitation processes. By varying the polarization of the incident pump beam on the aligned SWCNT film, we found that the anisotropy of the coherent RBM excitation depends on the laser wavelength…
The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.
Macroscopic polarization plays a major role in determining the optical and electrical properties of nitride nanostructures via polarization-induced built-in electrostatic fields. While currently fashionable, this field of endeavour is still by far in its early infancy. Here we contribute some clarifications on the conceptual issues involved in determining built-in fields in III-V nitride nanostructures, sorting out in particular the roles of spontaneous and piezoelectric polarization.
Coherent one photon ($2 ω$) and two photon ($ ω$) electronic excitations are studied for graphene sheets and for carbon nanotubes using a long wavelength theory for the low energy electronic states. For graphene sheets we find that coherent superposition of these excitations produces a polar asymmetry in the momentum space distribution of the excited carriers with an angular dependence which depends on the relative polarization and phases of the incident fields. For semiconducting nanotubes we find a similar effect which depends on the square of the semiconducting gap, and we calculate its fre…
Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the nitrides. Here we discuss the background theory, the role of spontaneous polarization in this context, and the practical implications of built-in polarization fields in nitride nanostructures. To support our arguments, we present detailed self-consistent tight-binding simulations of typical nitride QW structures in which polarization effects are dominant.
Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the nitrides. Here we discuss the background theory, the role of spontaneous polarization in this context, and the practical implications of built-in polarization fields in nitride nanostructures. To support our arguments, we present detailed self-consistent tight-binding simulations of typical nitride QW structures in which polarization effects are dominant.
We report an environmentally stable nanotube mode-locked fibre laser producing linearly-polarized, nanosecond pulses. A simple all-polarization-maintaining fibre ring cavity is used, including 300 m of highly nonlinear fibre to elongate the cavity and increase intracavity dispersion and nonlinearity. The laser generates scalar pulses with a duration of 1.23 ns at a centre wavelength of 1042 nm, with 1.3-nm bandwidth and at 641-kHz repetition rate. Despite the long cavity, the output characteristics show no significant variation when the cavity is perturbed, and the degree of polarization remai…
Accurate values for polarization discontinuities between pyroelectric materials are critical for understanding and designing the electronic properties of heterostructures. For wurtzite materials, the zincblende structure has been used in the literature as a reference to determine the effective spontaneous polarization constants. We show that, because the zincblende structure has a nonzero formal polarization, this method results in a spurious contribution to the spontaneous polarization differences between materials. In addition, we address the correct choice of "improper" versus "proper" piez…
In a theoretical study of gas adsorption on carbon nanotubes (CNT) nonequilibrium processes of ionization, polarization, surface diffusion and desorption of atoms are considered self-consistently. The approach is based on Zubarev's method of nonequilibrium statistical operator and reaction-diffusion theory. The set of nonlinear transport equations are obtained for the chosen parameters of description: the average numbers of adsorbed atoms, ionized and polarized atoms in the electromagnetic field of CNT, and the average number of atoms desorbed from the CNT surface. Ab initio simulations are co…
We study the dependence of macroscopic polarization on composition and strain in wurtzite III-V nitride ternary alloys using ab initio density-functional techniques. The spontaneous polarization is characterized by a large bowing, strongly dependent on the alloy microscopic structure. The bowing is due to the different response of the bulk binaries to hydrostatic pressure, and to internal strain effects (bond alternation). Disorder effects are instead minor. Deviations from parabolicity (simple bowing) are of order 10 % in the most extreme case of AlInN alloy, much less at all other compositio…
We demonstrate the epitaxial growth of optical-quality electrically-gated III-V ferromagnetic quantum structures. Photoluminescence spectroscopy reveals that initially unpolarized photoexcited holes in a GaAs quantum well become spin-polarized opposite to the magnetization of an adjacent digital ferromagnetic layer in the AlGaAs barrier. A vertical bias is used to tune the spin polarization from -0.4 to 6.3 percent at T = 5 K and B = 1 kG during which the luminescence becomes quenched, indicating that the polarization is mediated by wave function overlap between heavy holes in the quantum well…
Effect of contact interfaces, between metallic single-wall carbon nanotubes (SWCNT) and external electrodes made also of nanotubes, on the electrical conductance is studied. A tight-binding model with both diagonal and off-diagonal disorder, a recursive Green function technique as well as the Landauer formalism are used. The studies are carried out within the coherent transport regime and are focused on: (i) evolution from conductance quantization to resonant tunneling, (ii) SWCNT's length effects and (iii) magnetoresistance. It is shown that the so-called on-resonance devices, i.e. nanotubes …
The effective linear coupling coefficient and the total spin-splitting are calculated in Ga- and N- face InGaN quantum wells. Alloy content, geometry, and gate voltage affect an internal field and an electron density distribution in the growth direction that has direct effect on a spin-splitting. The sign of structural inversion asymmetry (SIA) spin-orbit coupling coefficient depends on an internal electric field in the well that results in different signs for Ga-face and N-face III-Nitride structures. The effective linear coupling coefficient is always positive because of the Dresselhaus-type…
We present a lattice dynamics study of the vibrations of a linear chain of Xe adsorbates in groove positions of a bundle of carbon nanotubes. The characteristic phonon frequencies are calculated and the adsorbate polarization vectors discussed. Comparison of the present results with the ones previously published shows that the adsorbate vibrations cannot be treated as completely decoupled from the vibrations of carbon nanotubes and that a significant hybridization between the adsorbate and the tube modes occurs for phonons of large wavelengths.
The spontaneous and piezoelectric polarizations of III-nitrides considerably affect the operation of various III-nitride-based devices. We report an ab initio study of the spontaneous polarization (SP) and piezoelectric (PZ) constants of the III-nitride binary and ternary alloys with the hexagonal reference structure. These calculated polarization properties offer us a profound principle for polarization engineering of nitride semiconductor devices, based on which we propose a few heterojunctions which have nearly-zero polarization effect at the junctions that can potentially enhance optical a…
The integration of ferroelectrics that exhibit high dielectric, piezoelectric, and thermal susceptibilities with the mainstream semiconductor industry will enable novel device types for widespread applications, and yet there are few silicon-compatible ferroelectrics suitable for device downscaling. We demonstrate with first-principles calculations that the enhanced depolarization field at the nanoscale can be utilized to soften unswitchable wurtzite III-V semiconductors, resulting in ultrathin two-dimensional (2D) sheets possessing reversible polarization states. A 2D sheet of AlSb consisting …
We calculated the effects of structural distortions on the electronic structure of carbon nanotubes. The key modification of the electronic structure brought about by bending a nanotube involves an increased mixing of $σ$ and $π$-states. This mixing leads to an enhanced density-of-states in the valence band near the Fermi energy region. While in a straight tube the states accessible for electrical conduction are essentially pure C($2p_π$)-states, they acquire significant C($2sp_σ$) character upon bending. Bending also leads to a charge polarization of the C-C bonds in the deformed region remin…
We present a theory of local electric polarization in crystalline solids and apply it to study the case of wurtzite group-III nitrides. We show that a local value of the electric polarization, evaluated at the atomic sites, can be cast in terms of a summation over nearest-neighbor distances and Born effective charges. Within this model, the local polarization shows a direct relation to internal strain and can be expressed in terms of internal strain parameters. The predictions of the present theory show excellent agreement with a formal Berry phase calculation for random distortions of a test-…
We report the first theoretical study of hydroxyl vacancies in aluminosilicate and aluminogermanate single-walled metal-oxide nanotubes. The defects are modeled on both sides of the tube walls and lead to occupied and empty states in the band gap which are highly localized both in energy and in real space. We find different magnetization states depending on both the chemical composition and the specific side with respect to the tube cavity. The defect-induced perturbations to the pristine electronic structure are related to the electrostatic polarization across the tube walls and the ensuing c…
Ferroelectric switching is unambigiously demonstrated for the first time in a III-V semiconductor based material: AlScN -- A discovery which could help to satisfy the urgent demand for thin film ferroelectrics with high performance and good technological compatibility with generic semiconductor technology which arises from a multitude of memory, micro/nano-actuator and emerging applications based on controlling electrical polarization. The appearance of ferroelectricity in AlScN can be related to the continuous distortion of the original wurtzite-type crystal structure towards a layered-hexago…
In this work, we report on the electrochemical behavior of nitrided spaced TiO$_2$ nanotubes conformally coated with a nanocrystalline Nb$_2$O$_5$ layer and find for these hierarchical structures an excellent supercapacitor performance. Highly aligned conductive 1D electrodes were obtained by a three step process: i) growth of self-organized nanotubes with defined and adjustable intertube spacing, ii) conformal Nb$_2$O$_5$ decoration in the tube interspace (while providing full electrolyte access to the entire active area), and iii) high temperature nitridation. Key is the growth of a nanotube…
We report a novel, polarization dependent, femtosecond laser-induced modification of surface nanostructures of indium, gallium, and arsenic grown on silicon via molecular beam epitaxy, yielding shape control from linear and circular polarization of laser excitation. Linear polarization causes an elongation effect, beyond the dimensions of the unexposed nanostructures, ranging from 88 nm to over 1 um, and circular polarization causes the nanostructures to flatten out or form loops of material, to diameters of approximately 195 nm. During excitation, it is also observed that the generated second…
We study theoretically the electronic structure, transport and optical properties for a zigzag single-wall carbon nanotube connected to two normal conductor leads under the irradiation of an external electromagnetic field at low temperatures, with particular emphasis on the features of high-frequency response. Using the standard nonequilibrium Green's function techniques, we examine the time-averaged density of states, the conductivity, the dielectric function and the electron energy loss spectra for the system with photon polarization parallel with the tunneling current direction, respectivel…
As a novel function of ferromagnet (FM)/spacer/FM junctions, we theoretically investigate multiple-valued (or multi-level) cell property, which is in principle realized by sensing conductances of four states recorded with magnetization configurations of two FMs; (up,up), (up,down), (down,up), (down,down). In order to sense all the states, 4-valued conductances corresponding to the respective states are necessary. We previously proposed that 4-valued conductances are obtained in FM1/spin-polarized spacer (SPS)/FM2 junctions, where FM1 and FM2 have different spin polarizations, and the spacer de…
The element-specific technique of x-ray magnetic circular dichroism (XMCD) is used to directly determine the magnitude and character of the valence band orbital magnetic moments in (III,Mn)As ferromagnetic semiconductors. A distinct dichroism is observed at the As K absorption edge, yielding an As 4p orbital magnetic moment of around -0.1 Bohr magnetons per valence band hole. This is strongly influenced by strain, indicating its crucial influence on the magnetic anisotropy. The dichroism at the Ga K edge is much weaker. The K edge XMCD signals for Mn and As both have positive sign, which indic…
Printed electronics rely on the deposition of conductive liquid inks, typically onto polymeric or paper substrates. Among available conductive fillers for use in electronic inks, carbon nanotubes (CNTs) have high conductivity, low density, processability at low temperatures, and intrinsic mechanical flexibility. However, the electrical conductivity of printed CNT structures has been limited by CNT quality and concentration, and by the need for nonconductive modifiers to make the ink stable and extrudable. This study introduces a polymer-free, printable aqueous CNT ink, and presents the relatio…
Optical properties of semiconductors can exhibit strong polarization dependence due to crystalline anisotropy. A number of recent experiments have shown that the photoluminescence intensity in free standing nanowires is polarization dependent. One contribution to this effect is the anisotropy of the dielectric function due to the fact that most nanowires crystalize in the wurtzite form. While little is known experimentally about the band structures wurtzite phase III-V semiconductors, we have previously predicted the bulk band structure of nine III-V semiconductors in wurtzite phase.Here, we p…
