An evolution partial differential equation for the surface of a non-wetting single-crystal film in an attractive substrate potential is derived and used to study the dynamics of a pinhole for the varying initial depth of a pinhole and the strengths of the potential and the surface energy anisotropy. The results of the simulations demonstrate how the corresponding parameters may lead to complete or partial dewetting of the film. Anisotropy of the surface energy, through faceting of the pinhole walls, is found to most drastically affect the time to film rupture. In particular, the similations support the conjecture that the strong anisotropy is capable of the complete suppression of dewetting even when the attractive substrate potential is strong.
The surface evolution model based on geometric partial differential equation is used to numerically study the kinetics of dewetting and dynamic morphologies for the localized pinhole defect in the surface of the ultrathin solid film with the strongly anisotropic surface energy. Depending on parameters such as the initial depth and width of the pinole, the strength of the attractive substrate potential and the strength of the surface energy anisotropy, the pinhole may either extend to the substrate and thus rupture the film, or evolve to the quasiequilibrium shape while the rest of the film sur…
The fluid dynamics of the classical dewetting instability in ultrathin films is a non-linear process. However, the physical manifestation of the instability in terms of characteristic length and time scales can be described by a linearized form of the initial conditions of the films's dynamics. Alternately, the thermodynamic approach based on equating the rate of free energy decrease to the viscous dissipation [de Gennes, C. R. Acad. Paris.v298, 1984] can give similar information. Here we have evaluated dewetting in the presence of thermocapillary forces arising from a film-thickness (h) depen…
We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO2 under nanosecond laser melting is found to be film thickness dependent. For films with thickness h between 2 <= h <= 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films 11.5 <= h <= 20 nm, the intermediate stages consisted of regularly-sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetti…
The dewetting dynamics of an ultrathin film is studied in the presence of evaporation - or reaction - of adatoms on the substrate. KMC simulations are in good agreement with an analytical model with diffusion, rim facetting, and substrate sublimation. As sublimation is increased, we find a transition from the usual dewetting regime where the front slows down with time, to a sublimation-controlled regime where the front velocity is approximately constant. The rim width exhibits an unexpected non-monotonous behavior, with a maximum in time.
A mathematical model is developed to analyze the growth/decay rate of surface perturbations of an ultrathin metal film on an amorphous substrate (SiO_{2}). The formulation combines the approach of Mullins [J. Appl. Phys. v30, 77, 1959] for bulk substrates, in which curvature-driven mass transport and surface deformation can occur by surface/volume diffusion and evaporation-condensation processes, with that of Spencer et al. [Phys. Rev. Lett. v67, 26, 1991] to describe solid state transport in thin films under epitaxial strain. The model is applied to study the relative rate of solid state mass…
Nanoscale CoFeB amorphous films have been synthesized on GaAs(100) and studied with X-ray magnetic circular dichroism (XMCD) and transmission electron microscopy (TEM). We have found that the ratios of the orbital to spin magnetic moments of both the Co and Fe in the ultrathin amorphous film have been enhanced by more than 300% compared with those of the bulk crystalline Co and Fe, and in specifically, a large orbital moment of 0.56*10^-6 B from the Co atoms has been observed and at the same time the spin moment of the Co atoms remains comparable to that of the bulk hcp Co. The results indicat…
Microscopy and diffraction measurements are presented of ultrathin binary alloy films of ruthenium and molybdenum that are obtained by standard sputter deposition. For compositions close to Ru50Mo50, we find the films to be amorphous. The amorphicity of the films is accompanied by a significant reduction of the roughness with respect to the roughness of equally thick films of either ruthenium or molybdenum. We ascribe this to the absence of the grain structure that is characteristic of the polycrystalline films of the separate elements.
Everyday experience confirms the tendency of adhesive films to detach from spheroidal regions of rigid substrates -- what is a petty frustration when placing a sticky bandage onto an elbow or knee is a more serious matter in the coating and painting industries. Irrespective of their resistance to bending, a key driver of such phenomena is Gauss' \textit{Theorema Egregium}, which implies that naturally flat sheets cannot conform to doubly-curved surfaces without developing a strain whose magnitude grows sharply with the curved area. Previous attempts to characterize the onset of curvature-induc…
The discovery of ferromagnetism in two-dimensional (2D) monolayers has stimulated growing research interest in both spintronics and material science. However, these 2D ferromagnetic layers are mainly prepared through an incompatible approach for large-scale fabrication and integration, and moreover, a fundamental question whether the observed ferromagnetism actually correlates with the 2D crystalline order has not been explored. Here, we choose a typical 2D ferromagnetic material, Fe3GeTe2, to address these two issues by investigating its ferromagnetism in an amorphous state. We have fabricate…
To explore the further possibilities of nanometer-thick ferromagnetic films (ultrathin ferromagnetic films), we investigated the ferromagnetic resonance (FMR) of 1 nm-thick Co film. Whilst an FMR signal was not observed for the Co film grown on a SiO2 substrate, the insertion of a 3 nm-thick amorphous Ta buffer layer beneath the Co enabled the detection of a salient FMR signal, which was attributed to the smooth surface of the amorphous Ta. This result implies the excitation of FMR in an ultrathin ferromagnetic film, which can pave the way to controlling magnons in ultrathin ferromagnetic film…
The nanometer-scale size-dependent electronic transport properties of crystalline (c-) and amorphous (a-) germanium telluride (GeTe) ultrathin films sandwiched by titanium nitride (TiN) electrodes are investigated using ab initio molecular dynamics (AIMD), density functional theory (DFT), and Green's function calculations. We find that a-GeTe ultrathin films scaled down to about 38 Angstrom (12 atomic layers) still shows a band gap and the electrical conductance is mainly due to electron transport via intra-gap states. If the ultrathin films are further scaled, the a-GeTe band gap disappears d…
This work reports an original method for the fabrication of Metal-Isulator-Semiconductor (MIS) structures with silicon nanocrystals (Si NCs) based active layers embedded in the insulating SiO 2 oxide, for high performance solar cell and photodetector applications. The Si NCs are produced via the in situ solid-state dewetting of ultra-pure amorphous silicon-oninsulator (a-SOI) grown by solid source molecular beam epitaxy (SSMBE). The size and density of Si NCs are precisely tuned by varying the deposited thickness of silicon. The morphological characterization carried out by using atomic force …
Inorganic-organic interfaces are important for enhancing the power conversion efficiency of silicon-based solar cells through singlet exciton fission (SF). We elucidated the structure of the first monolayers of tetracene (Tc), a SF molecule, on hydrogen-passivated Si(111) [H-Si(111)] and hydrogenated amorphous Si (a-Si:H) by combining near-edge X-ray absorption fine structure (NEXAFS) and X-ray photoelectron spectroscopy (XPS) experiments with density functional theory (DFT) calculations. For samples grown at or below substrate temperatures of 265 K, the resulting ultrathin Tc films are domina…
The melting of ultrathin lubricant film is studied by friction between atomically flat surfaces. The fluctuations of lubricant temperature are taken into account defined by Ornstein-Uhlenbeck process. The phase diagrams and portraits are calculated for the cases of second-order and first-order transitions -- the melting of amorphous and crystalline lubricants. It is shown that in the first case the stick-slip friction domain appears, dividing the regions of dry and sliding friction. In the second case the three stick-slip friction domains arise characterized by transitions between dry, metasta…
In recent years, thin-film organic field-effect transistors (OFETs) have begun to be considered as a possible alternative to the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) used in active matrix flat panel displays and other large-area electronics applications. Low-temperature processability, low-cost fabrication and compatibility with arbitrary substrates are some of the promising advantages of OFETs, among others. Of the many organic materials available, pentacene, in particular, is one of the leading candidates for use in current thin-film OFET architectures - this b…
Defining the magnetic anisotropy for in-plane or out-of-plane easy axis in ferrimagnetic insulators films by controlling the strain, while maintaining high-quality surfaces, is desirable for spintronic and magnonic applications. We investigate ways to tune the anisotropy of amorphous sputtered ultrathin thulium iron garnet (TIG) films, and thus tailor their magnetic properties by the thickness (7.5 to 60 nm), substrate choice (GGG and SGGG), and crystallization process. We correlate morphological and structural properties with the magnetic anisotropy of post-growth annealed films. 30 nm thick …
We identify a magnetic field induced transition from a vortex liquid to Bose metal in a 2-dimensional amorphous superconductor, a-MoGe, using a combination of magnetotransport and scanning tunnelling spectroscopy (STS). Below the superconducting transition, Tc ~ 1.36 K, the magnetoresistance isotherms cross at a nearly temperature independent magnetic field, H_c^*~ 36 kOe. Above this field, the temperature coefficient of resistance is weakly negative, but the resistance remains finite as T --> 0, as expected in a bad metal. From STS conductance maps at 450 mK we observe a very disordered vorte…
We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO$_{2}$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the…
An in-situ nanoscopic investigation of the prototypical surface alloying system Ag/Pt(111) is reported. The morphology and the structure of the ultrathin Ag-Pt film is studied using Low Energy Electron Microscopy during growth at about 800 K. An amazingly rich dynamic behaviour is uncovered in which stress relieve plays a governing role. Initial growth leads to surface alloying with prolonged and retarded nucleation of ad-islands. Beyond 50% coverage de-alloying proceeds, joined by partial segregation of Pt towards the centre of large islands in violent processes. Upon coalescence the irregula…
Demonstrate of High-Performance Top-Gate ALD Crystalline In2O3 Transistor Enabled by Lattice-Matched HfO2 and In2O3 Heterostructure
National Key Laboratory of Advanced Micro and Nano Manufacture Technology and School of Information Science and Electronic Engineering, Shanghai Jiao Tong University（上海交通大学信息科学与工程学院及先进微纳制造技术国家重点实验室）
