高性能顶栅ALD晶态In2O3晶体管：晶格匹配的HfO2/In2O3异质结构实现
Demonstrate of High-Performance Top-Gate ALD Crystalline In2O3 Transistor Enabled by Lattice-Matched HfO2 and In2O3 Heterostructure
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology and School of Information Science and Electronic Engineering, Shanghai Jiao Tong University（上海交通大学信息科学与工程学院及先进微纳制造技术国家重点实验室）
机构由 AI 辅助整理，请以论文原文为准。
AI总结：
本研究通过HfO2/In2O3晶格匹配异质结构实现晶态In2O3沟道，结合富氧工艺抑制氧清除，显著提升顶栅ALD晶体管迁移率与短沟道阈值稳定性，实现高性能BEOL兼容器件。
AI中文摘要：
本工作中，我们通过同时进行界面与结晶度工程，展示了高性能顶栅（TG）原子层沉积（ALD）晶态In2O3晶体管。首先，采用HfO2/In2O3/HfO2叠层结构，由于单斜相HfO2与立方相In2O3之间的晶格匹配，实现了超薄In2O3沟道的类外延结晶。其次，采用高剂量O3前驱体和升高沉积温度的富氧栅绝缘体工艺，有效抑制了栅介质沉积过程中的氧 scavenging，显著减少了界面缺陷的形成。第三，晶态In2O3中均匀的In-O键合网络对源/漏接触的氧 scavenging表现出显著增强的抵抗力，与非晶In2O3相比，这显著改善了短沟道长度下阈值电压（VTH）滚降的免疫性。结果，实现了高性能TG长沟道In2O3晶体管，具有163 cm2/V s的高迁移率和64 mV/dec的陡峭亚阈值摆幅。同时展示了高性能TG短沟道In2O3晶体管，在VD为1 V时具有1650 μA/μm的高ION，超过10^10的大开关比，以及-0.27 V的VTH。这些结果确立了晶格工程化晶态In2O3作为适用于BEOL兼容应用的高迁移率、积极缩放的TG氧化物晶体管的有效策略。
英文摘要：
In this work, we demonstrate high-mobility top-gate (TG) atomic-layer-deposited (ALD) crystalline In2O3 transistors through simultaneous interface and crystallinity engineering. First, a HfO2/In2O3/HfO2 stack is employed, enabling epitaxial-like crystallization of the ultrathin In2O3 channel, because of the lattice matching between monoclinic phase HfO2 and cubic phase In2O3. Second, an oxygen-rich gate insulator process is applied using high-dose O3 precursor and elevated deposition temperature, effectively suppressing oxygen scavenging during gate dielectric deposition, significantly reducing interfacial defect formation. Third, the homogeneous In-O bonding network in crystalline In2O3 exhibits substantially enhanced resistance to oxygen scavenging by source/drain contacts, which significantly improves the immunity to threshold voltage (VTH) roll-off at short channel length compared to amorphous In2O3. As a result, high-performance TG long-channel In2O3 transistors are achieved with a high mobility of 163 cm2/V s and a steep subthreshold slope of 64 mV/dec. High-performance TG short-channel In2O3 transistors with high ION of 1650 μA/μm at VD of 1 V, large on/off ratio over 1010 and VTH of -0.27 V are demonstrated. These results establish lattice-engineered crystalline In2O3 as an effective strategy for high-mobility, aggressively scaled TG oxide transistors suitable for BEOL-compatible applications.
