在掺杂Mn的PDMATHAAB分子束外延生长的$GaAs/Al_{0.3}Ga_{0.7}As$异质结构中实现与埋置二维电子气欧姆接触的新技术
A novel technique to make Ohmic contact to a buried two-dimensional electron gas in a molecular-beam-epitaxy grown $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure with Mn $δ$-doping
摘要：
我们报道了一种新的稀磁半导体（DMS）异质结构的生长和表征，该异质结构呈现二维电子气（2DEG），其载流子密度为$n \sim 1.08 \times 10^{12} cm^{-2}$，迁移率为$μ\sim 600 cm^{2} / (Vs)$，T $\sim$ 4.2K。据我们所知，这是文献中报道的GaMnAs系统的最高迁移率值。开发了一种新的技术，使欧姆接触到掩埋的2DEG不破坏我们的晶体的磁性。
英文摘要：
We report on the growth and characterization of a new Diluted Magnetic Semiconductor (DMS) heterostructure that presents a Two-Dimensional Electron Gas (2DEG) with a carrier density $n \sim 1.08 \times 10^{12} cm^{-2}$ and a mobility $μ\sim 600 cm^{2} / (Vs)$ at T $\sim$ 4.2K. As far as we know this is the highest mobility value reported in the literature for GaMnAs systems. A novel technique was developed to make Ohmic contact to the buried 2DEG without destroying the magnetic properties of our crystal.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
