Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an InAs/InP nanowire, using the tip as a movable gate. Images of dot conductance vs. tip position at T = 4.2 K show concentric rings as electrons are added, starting with the first electron. The SPM can locate a dot along a nanowire and individually tune its charge, abilities that will be very useful for the control of coupled nanowire dots.
We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.
We report a combined electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperature-evolution of the phonon linewidths. From these studies, temperature-dependent Raman measurements emerge has a non-invasive method to study polytypism in such nanowires.
The [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires have been studied by the $8\times 8$ Luttinger-Kohn $\vec{k}\cdot\vec{p}$ Hamiltonian to search for non-vanishing fundamental gaps between inverted electron and hole bands. We focus on the variations of the topologically nontrivial fundamental gap, the hybridization gap, and the effective gap with the core radius and shell thickness of the nanowires. The evolutions of all the energy gaps with the structural parameters are shown to be dominantly governed by quantum size effects. With a fixed core radius, a topologically nontrivial …
We measure transport at finite bias through a double quantum dot formed by top-gates in an InAs nanowire. Pauli spin-bockade is confirmed with several electrons in the dot. This is expected due to the small exchange interactions in InAs and the large singlet-triplet splitting, which can be measured and tuned by a gate voltage.
To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs-nanowire-based circuits, an on-chip photocurrent pump-probe spectroscopy based on coplanar striplines was utilized. The data are interpreted in terms of a photo-thermoelectric current and the transport of photogenerated holes to the electrodes as the dominating ultrafast photocurrent contributions. Moreover, it is shown that THz radiation is generated in the optically excited InAs-nanowires, which is interpreted in terms of a dominating photo-Dember effect. The results are relevant for…
We report on half-integer Shapiro steps observed in an InAs nanowire Josephson junction. We observed the Shapiro steps of the short ballistic InAs nanowire Josephson junction and found anomalous half-integer steps in addition to the conventional integer steps. The half-integer steps disappear as the temperature increases or transmission of the junction decreases. These experimental results agree closely with numerical calculation of the Shapiro response for the skewed current phase relation in a short ballistic Josephson junction.
The combination of strong spin-orbit coupling, large $g$-factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure. We find the strongest spin-orbit interaction at intermediate compositions in zincblende InAs$_{1-x}$Sb$_{x}$ nanowires, exceeding that of both InAs and InSb materials, confirming recent theoretical studies \cite{winkler2016topological}. We show that the epitaxial InAsSb/Al inter…
We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate control of the Fermi energy reveal the Landau fragmentation, carrying the fingerprints of the confined InAs material. Our numerical simulations of the magnetic band structure consistently support the experimental results and reveal key parameters of the electronic confinement.
We report on \textit{in situ} growth of crystalline Al and Nb shells on InAs nanowires. The nanowires are grown on Si(111) substrates by molecular beam epitaxy (MBE) without foreign catalysts in the vapor-solid mode. The metal shells are deposited by electron-beam evaporation in a metal MBE. High quality supercondonductor/semiconductor hybrid structures such as Al/InAs and Nb/InAs are of interest for ongoing research in the fields of gateable Josephson junctions and quantum information related research. Systematic investigations of the deposition parameters suitable for metal shell growth are …
We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence ($μ$PL) spectroscopy and micro-Raman ($μ$-Raman) spectroscopy measurements. We observe that the core-shell nanowires are of wurtzite (WZ) crystal phase and are coherently strained, with the core and the shell having the same number of atomic planes in each nanowire. We determi…
An internal field induced resonant intensity enhancement of Raman scattering of phonon excitations in InAs nanowires is reported. The experimental observation is in good agreement with the simulated results for the scattering of light under varying incident wavelengths, originating from the enhanced internal electric field in an infinite dielectric cylinder. Our analysis demonstrates the combined effect of the first higher lying direct band gap energy (E1) and the refractive index of the InAs nanowires in the internal field induced resonant Raman scattering. Furthermore, the difference in the …
We constructed the Hamiltonian of spin-orbit splitting for carriers of a tubular electron gas in InAs nanowires. The spectral problem is solved using an exact numerical diagonalization. It is shown that the contribution of k-linear Dresselhaus-like spin-orbit (SO) coupling leads to renormalization of so-called SO-gaps and appearance of anticrossings in subband spectrum. These features can be detected in ballistic transport.
Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of their conductance. Contacting multiple sections of each wire, we can study the diameter dependence within individual wires without the need to compare different nanowire batches. At room temperature we find a diameter-independent conductivity for diameters larger than 40 nm, indicative of three-dimensional diffusive transport. For smaller diameters, the resistan…
We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to 300K. At low temperatures (T< ~100K), oscillations in the thermopower and power factor concomitant with the stepwise conductance increases are observed as the gate voltage shifts the chemical potential of electrons in InAs nanowire through quasi-one-dimensional (1D) sub-bands. This work experimentally shows the possibility to modulate semiconductor nanowire's t…
We report on observation of coherent electron transport in suspended high-quality InAs nanowire-based devices. The InAs nanowires were grown by low-temperature gold-assisted vapor-liquid-solid molecular-beam-epitaxy. The high quality of the nanowires was achieved by removing the typically found stacking-faults and reducing possible Au incorporation. Minimizing substrate-induced scattering in the device was achieved by suspending the nanowires over predefined grooves. Coherent transport involving more than a single one-dimensional mode transport, was observed in the experiment, manifested by Fa…
We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown core-shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shell are grown preferentially on specific {1$\bar{1}$00} facets, leading to the formation of the core-shell nanowires with an overall triangular cross section. The…
We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctions. The measured photocurrent characteristics are consistent with an excess charge carrier transport through mid-gap trap states, which form at the Si/InAs heterojunctions. Namely, the trap states add an additional transport path across a heterojunction, and the charge of the defects changes the band bending at the junction. The bending gives rise …
We show how a scanning probe microscope (SPM) can be used to image electron flow through InAs nanowires, elucidating the physics of nanowire devices on a local scale. A charged SPM tip is used as a movable gate. Images of nanowire conductance vs. tip position spatially map the conductance of InAs nanowires at liquid He temperatures. Plots of conductance vs. back gate voltage without the tip present show complex patterns of Coulomb-blockade peaks. Images of nanowire conductance identify multiple quantum dots located along the nanowire - each dot is surrounded by a series of concentric rings cor…
Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of InAsSb/Al nanowires was studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibited periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire …
We report the graded electronic band gap along the axis of individual heterostructured WZ-ZB InAs/InSb0.12As0.88 nanowires. Resonance Raman imaging has been exploited to map the axial variation in the second excitation gap energy (E1) at the high symmetry point (L point) of the Brillouin zone. We relate the origin of the observed evolution of the gap energy to the fine tuning of the alloy composition from the tip towards the interface of the nanowire. The electronic band structures of InAs, InSb and InSbxAs1-x alloy systems at x=0.125, 0.25, 0.50, 0.75 and 0.875, using all electron density fun…
We report fabrication and measurement of a device where closely-placed two parallel InAs nanowires (NWs) are contacted by source and drain normal metal electrodes. Established technique includes selective deposition of double nanowires onto a previously defined gate region. By tuning the junction with the finger bottom gates, we confirmed the formation of parallel double quantum dots, one in each NW, with a finite electrostatic coupling between each other. With the fabrication technique established in this study, devices proposed for more advanced experiments, such as Cooper-pair splitting and…
The transfer of heat between electrons and phonons plays a key role for thermal management in future nanowire-based devices, but only a few experimental measurements of electron-phonon (e-ph) coupling in nanowires are available. Here, we combine experimental temperature measurements on an InAs/InP heterostructure nanowire system with finite element modeling (FEM) to extract information on heat flow mediated by e-ph coupling. We find that the electron and phonon temperatures in our system are highly coupled even at temperatures as low as 2 K. Additionally, we find evidence that the usual power-…
We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to the spin 1/2-Kondo effect. Unlike to previous studies based on 2DEG quantum dots, the g-factors of neighboring electron states show a surprisingly large fluctuation: g can scatter between 2 and 18. Furthermore electric gate tunability of the g-factor is demonstrated.
Surface energies play a dominant role in the self-assembly of three dimensional (3D) nanostructures. In this letter, we show that using surfactants to modify surface energies can provide a means to externally control nanostructure self-assembly, enabling the synthesis of novel hierarchical nanostructures. We explore Bi as a surfactant in the growth of InAs on the {1-10} sidewall facets of GaAs nanowires. The presence of surface Bi induces the formation of InAs 3D islands by a process resembling the Stranski-Krastanov mechanism, which does not occur in the absence of Bi on these surfaces. The I…
We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating with the SiO2 /Si++ substrate. Thanks to this wide modulation we show the controlled evolution from semiconductor to metallic-like behavior in the nanowire. This work provides the first systematic study of ionic-liquid gating in electronic devices based on individual III-V semiconductor nanowires: we argue this architecture opens the way to a wide range of …
The determination and control of the electron $g$-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the $g$-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the $g$-factor from the splitting of Kondo resonances and find that it varies continuously in the range between $|g^*| = 5$ and 15.
We present low temperature transport measurements on double quantum dots in InAs nanowires grown by metal-organic vapor phase epitaxy. Two dots in series are created by lithographically defined top-gates with a procedure involving no extra insulating layer. We demonstrate the full tunability from strong to weak coupling between the dots. The quantum mechanical nature of the coupling leads to the formation of a molecular state extending over both dots. The excitation spectra of the individual dots are observable by their signatures in the nonlinear transport.
We report growth and characterization of a coupled quantum dot structure that utilizes nanowire templates for selective epitaxy of radial heterostructures. The starting point is a zinc blende InAs nanowire with thin segments of wurtzite structure. These segments have dual roles: they act as tunnel barriers for electron transport in the InAs core, and they also locally suppress growth of a GaSb shell, resulting in coaxial InAs-GaSb quantum dots with integrated electrical probes. The parallel quantum dot structure hosts spatially separated electrons and holes that interact due to the type-II bro…
A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin orbit interaction. Here, we demonstrate the generation and tuning of electric field induced Rashba spin orbit interaction in InAs nanowires where a strong electric field is created either by a double gate or a solid electrolyte surrounding gate. In particular, the electrolyte gating enables six-fold tuning of Rashba coefficient and nearly three orders of magnitude tuning of spin relaxation time within only 1 V of gate …
We report on a comprehensive study of spin-1/2 Kondo effect in a strongly-coupled quantum dot realized in a high-quality InAs nanowire. The nanowire quantum dot is relatively symmetrically coupled to its two leads, so the Kondo effect reaches the Unitary limit. The measured Kondo conductance demonstrates scaling with temperature, Zeeman magnetic field, and out-of-equilibrium bias. The suppression of the Kondo conductance with magnetic field is much stronger than would be expected based on a g-factor extracted from Zeeman splitting of the Kondo peak. This may be related to strong spin-orbit cou…
A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot in an InAs nanowire. The quantum dot is strongly coupled to the underlying point contact which is used as a charge detector. The addition of one electron to the quantum dot leads to a change of the conductance of the charge detector by typically 20%. The charge sensitivity of the detector is used to measure Coulomb diamonds as well as charging events outsid…
We report on experimental detection of the spin-orbit interaction field in an InAs nanowire double quantum dot device. In the spin blockade regime, leakage current through the double quantum dot is measured and is used to extract the effects of spin-orbit interaction and hyperfine interaction on spin state mixing. At finite magnetic fields, the leakage current arising from the hyperfine interaction is suppressed and the spin-orbit interaction dominates spin state mixing. We observe dependence of the leakage current on the applied magnetic field direction and determine the direction of the spin…
We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO$_2$ substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of $Δ_{ST}\sim 2.3$ meV, a strong spin-orbit interaction of $Δ_{SO}\sim 140$ $μ$eV, and a large and strongly level-dependent Landé g factor of $\sim 12.5$. These results imply that…
With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investigate single-electron tunneling in hard-wall InAs/InP nanowires in the presence of an off-resonant microwave drive. Our heterostructured nanowires include InAs quantum dots (QDs) and exhibit different tunnel-current regimes. In particular, for source-drain bias up to few mV Coulomb diamonds spread with increasing contrast as a function of microwave …
We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport signatures characteristic of diffusive junctions with highly transparent interfaces - sizable excess current, re-entrant resistance effect and proximity gap values ($Δ_N$) close to the Al gap ($Δ_0$). At decreasing $V_g$, we observe a reduction of the proximity gap down to $Δ_N\approxΔ_0/2$ at NW conductances $\sim2e^2/h$, which is interpreted in terms of c…
A systematic numerical investigation of spin-orbit fields in the conduction bands of III-V semiconductor nanowires is performed. Zinc-blende InSb nanowires are considered along [001], [011], and [111] directions, while wurtzite InAs nanowires are studied along [0001] and [10$\overline{1}$0] or [11$\overline{2}$0] directions. Realistic multiband $\vec{k} \cdot \vec{p}\,$ Hamiltonians are solved by using plane-wave expansions of real-space parameters. In all cases the linear and cubic spin-orbit coupling parameters are extracted for nanowire widths from 30 to 100 nm. Typical spin-orbit energies …
In the current paper a set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at helium temperatures in the presence of a charged atomic-force microscope tip is presented. Both nanowires without defects and with internal tunneling barriers were studied. The measurements were performed at various carrier concentrations in the systems and opacity of contact-to-wire interfaces. The regime of Coulomb blockade is investigated in detail including negative differential conductivity of the whole system. The situation with open contacts with one tunneling…
We report measurements of the nonlinear conductance of InAs nanowire quantum dots coupled to superconducting leads. We observe a clear alternation between odd and even occupation of the dot, with sub-gap-peaks at $|V_{sd}|=Δ/e$ markedly stronger(weaker) than the quasiparticle tunneling peaks at $|V_{sd}|=2Δ/e$ for odd(even) occupation. We attribute the enhanced $Δ$-peak to an interplay between Kondo-correlations and Andreev tunneling in dots with an odd number of spins, and substantiate this interpretation by a poor man's scaling analysis.
A key concept in the field of semiconductor spintronics is an electric field control of spins via the spin-orbit coupling (SOC) and the SOC strength governs efficiency of this control. We propose a new approach that allows the experimental determination of the Rashba SOC strength for ballistic InAs nanowires. The energy spectrum and ballistic transport of carriers through the nanowire with surface two-dimensional electron gas (2DEG) in a homogeneous magnetic field are studied. A general formula for the linear-response one-dimensional ballistic thermopower is derived in the case of complex subb…
Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can be tuned either by field-effect or doping. We investigated a series of InAs nanowires which conductivity has been modified by n-type doping using tellurium. In addition to electron microscopy studies, the wires were also examined with atomic probe tomography to obtain information about the local incorporation of Te atoms. It was found that the Te atoms mainly accumulate in the core of the nanowire and at the corners…
We investigate the triplet-singlet relaxation in a double quantum dot defined by top-gates in an InAs nanowire. In the Pauli spin blockade regime, the leakage current can be mainly attributed to spin relaxation. While at weak and strong inter-dot coupling relaxation is dominated by two individual mechanisms, the relaxation is strongly reduced at intermediate coupling and finite magnetic field. In addition we observe a charateristic bistability of the spin-non conserving current as a function of magnetic field. We propose a model where these features are explained by the polarization of nuclear…
A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as time-resolved charge detection experiments for electron flow through the quantum dot. We demonstrate that the Fano factor describing shot noise or time-correlations in single-electron transport depends in the theoretically expected way on the asymmetry of the tunneling barriers even in a regime where the thermal energy $k_\mathrm{B}T$ is comparable to the singl…
Superconductor-semiconductor nanowire hybrid structures are useful in fabricating devices for quantum information processing. While selective area growth (SAG) offers the flexibility to grow semiconductor nanowires in arbitrary geometries, in-situ evaporation of superconductors ensures pristine superconductor-semiconductor interfaces, resulting in strong induced superconductivity in the semiconducting nanowire. In this work, we evaporated islands of superconductor tin on InAs SAG nanowires, by using in-situ shadowing with high aspect-ratio pre-fabricated SiOx dielectric walls. Our technique al…
Millivolt range thermovoltage is demonstrated in single InAs-nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias DT>10K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity between room temperature and 100K$. Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates…
Gate-controlled supercurrent (GCS) in superconductor nanobridges has recently attracted attention as a means to create superconducting field effect transistors. Despite the clear advantage for applications with low power consumption and high switching speeds, the microscopic mechanism of the field effect is still under debate. In this work, we realize GCS for the first time in an epitaxial superconductor, which is created as a shell on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying $\simeq\pm$ 23$\,$V on a bottom gate i…
We study the electronic structure of full-shell superconductor-semiconductor nanowires, which have recently been proposed for creating Majorana zero modes, using an eight-band $\vec{k} \cdot \vec{p}$ model within a fully self-consistent Schrödinger-Poisson scheme. We find that the spin-orbit coupling induced by the intrinsic radial electric field is generically weak for sub-bands with their minimum near the Fermi energy. Furthermore, we show that the chemical potential windows consistent with the emergence of a topological phase are small and sparse and can only be reached by fine tunning the …
Bound states in superconductor-nanowire hybrid devices play a central role, carrying informationon the ground states properties (Shiba or Andreev states) or on the topological properties of thesystem (Majorana states). The spectroscopy of such bound states relies on the formation of well-defined tunnel barriers, usually defined by gate electrodes, which results in smooth tunnel barriers.Here we used thin InP segments embedded into InAs nanowire during the growth process to forma sharp built-in tunnel barrier. Gate dependence and thermal activation measurements have beenused to confirm the pres…
In this report, we study electromechanical properties of a suspended InAs nanowire (NW) resonator. At low temperatures, the NW acts as the island of a single electron transistor (SET) and we observe a strong coupling between electrons and mechanical modes at resonance; the rate of electron tunneling is approximately 10 times the resonant frequency. Above and below the mechanical resonance, the magnitude of Coulomb peaks is different and we observe Fano resonance in conductance due to the interference between two contributions to potential of the SET. The quality factor ($Q$) of these devices i…
We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe approximately quantized conductance plateaus associated with the first two spin-polarized one-dimensional modes. For $B < 1$ T, the onset of superconductivity occurs in concomitance with the development of sizeable charge localization leading to a 0.7-type conductance anomaly. In this regime, the proximity su…
We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous works, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer sub-band regime. The four-terminal device design excludes electrode contact resistance, an unknown value which has inevitably affected previously reported device conductance. Using tunneling spectroscopy, we find large zero-bias peaks (ZBPs) in differential conductance on the order of $2e^2/h$. Investigating the ZBP evolution by sweeping various gate voltag…
We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we ascribe to single-hole tunneling through a quantum dot in the GaSb core. As the gate voltage increases, the measured charge stability diagram indicates the appearance of an additional quantum dot, which we suggest is an electron quantum dot formed in the InAsSb shell. We find that an electron-hole interaction induces shifts of transport resonances in the sou…
Semiconductor-superconductor hybrids are widely used for realising complex quantum phenomena such as topological superconductivity and spins coupled to Cooper pairs. Accessing exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. The challenge is to generate favourable conditions for heterostructure formation between materials with the desired inherent properties. Here, we harness increased knowledge of metal-on-semiconductor growth to develop InAs nanowires with epitaxi…
Time- and spectrally-resolved PL from a periodic array of InP/InAs/InP core-multishell nanowires is presented. InAs layer shows multipeak PL spectra. PL decay is nonexponential and very slow, with decay rate depending on energy.
We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to extract valuable quantitative information of the QD. The QD shows very regular Coulomb blockade (CB) resonances over a large gate voltage range. By analyzing the resonance line shapes, we map the evolution of the tunnel couplings from the few to the many electron regime, with electrically tunable tunnel couplings from <1 $μ$eV to >600 $μ$eV, and a transition from…
The superconducting proximity effect is probed experimentally in Josephson junctions fabricated with InAs nanowires contacted by Nb leads. Contact transparencies $t \sim 0.7$ are observed. The electronic phase coherence length at low temperatures exceeds the channel length. However, the elastic scattering length is a few times shorter than the channel length. Electrical measurements reveal two regimes of quantum transport: (i) the Josephson regime, characterized by a dissipationless current up to $\sim 100$ nA, and (ii) the quantum dot regime, characterized by the formation of Andreev Bound St…
We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment [S. Vaitiekenas \emph{et al.}, Nat. Phys. (2020)], combining both spectroscopic results and microscopic device simulations. In particular, we use angle-resolved photoemission spectroscopy to investigate the band bending at the InAs/EuS interface. The resulting band offset value serves as an essential input to subsequent microscopic device simulations, allowing us to map the electronic wave function distribution. We conclude that the magnetic proximity effects at the Al/EuS as well as the InAs/…
Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires. Comparison between switching current distributions at opposite gate polarities and between the gate dependence of two opposite side gates with different nanowire$-$gate spacings shows that the …
