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arXiv 0802.2972cond-mat.supr-con
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高各向异性金属中点电荷杂质的筛选:应用于欠掺杂铜氧化物的$μ^+$自旋弛豫

Screening of point charge impurities in highly anisotropic metals: application to $μ^+$ spin relaxation in underdoped cuprates

Arkady Shekhter, Lei Shu, Vivek Aji, D. E. MacLaughlin, C. M. Varma

摘要:

我们计算屏蔽电荷密度分布由于点电荷,如正μ子($μ^+$),放置在平面之间的高度各向异性的层状金属。在欠掺杂的空穴铜氧化物中,屏蔽电荷将$μ^+$附近的金属平面晶胞中的电荷密度转换为接近其在绝缘状态下的值。极化中子衍射所观察到的电流环有序状态,然后消失在这样的细胞,也在附近的细胞在一个距离的顺序的内在相关长度的环有序状态。这又强烈地抑制了$μ^+$位置处的回路电流场。我们估计了欠掺杂$_2$ Cu $_3$ O $_{6+x}$和La $_{2-x}$ Sr $_x$ CuO $_4$中的抑制场,发现在前一种情况下与观测到的0.2- 0.3 G场一致,在后一种情况下与观测到的$\sim$ 0.2 G上界一致.这解决了中子衍射和$μ$ SR实验之间的争议。筛选计算也有相关的铜酸盐中的其他电荷杂质的影响,如掺杂剂本身。

英文摘要:

We calculate the screening charge density distribution due to a point charge, such as that of a positive muon ($μ^+$), placed between the planes of a highly anisotropic layered metal. In underdoped hole cuprates the screening charge converts the charge density in the metallic-plane unit cells in the vicinity of the $μ^+$ to nearly its value in the insulating state. The current-loop ordered state observed by polarized neutron diffraction then vanishes in such cells, and also in nearby cells over a distance of order the intrinsic correlation length of the loop-ordered state. This in turn strongly suppresses the loop-current field at the $μ^+$ site. We estimate this suppressed field in underdoped YBa$_2$Cu$_3$O$_{6+x}$ and La$_{2-x}$Sr$_x$CuO$_4$, and find consistency with the observed 0.2--0.3 G field in the former case and the observed upper bound of $\sim$0.2 G in the latter case. This resolves the controversy between the neutron diffraction and $μ$SR experiments. The screening calculation also has relevance for the effect of other charge impurities in the cuprates, such as the dopants themselves.

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