含反缺口坡莫合金弯曲丝畴壁结构的直接观察
Direct observation of domain wall structures in curved permalloy wires containing an anti-notch
摘要：
用洛伦兹显微镜研究了弯曲坡莫合金丝中头对头畴壁的形成和场响应。高空间分辨率地图的矢量感应分布在畴壁接近的反缺口已被推导出来，并与微磁模拟。在厚度为10 nm的线中，壁通常是改进的不对称横向壁类型。研究了它们对反缺口位置处与导线相切的外加场的响应。墙结构的变化方式取决于场是将墙移离槽口还是进一步移进槽口。在后一种情况下，需要更高的场，并且观察到更多的扭曲壁结构，这表明反缺口作为畴壁的能量势垒。
英文摘要：
The formation and field response of head-to-head domain walls in curved permalloy wires, fabricated to contain a single anti-notch, have been investigated using Lorentz microscopy. High spatial resolution maps of the vector induction distribution in domain walls close to the anti-notch have been derived and compared with micromagnetic simulations. In wires of 10 nm thickness the walls are typically of a modified asymmetric transverse wall type. Their response to applied fields tangential to the wire at the anti-notch location was studied. The way the wall structure changes depends on whether the field moves the wall away from or further into the notch. Higher fields are needed and much more distorted wall structures are observed in the latter case, indicating that the anti-notch acts as an energy barrier for the domain wall.
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