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arXiv 0801.3055cond-mat.str-el
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The Kondo effect of surface excitons

P. D. Altukhov

英文摘要:

A recombination radiation line of real excitons in dense two-dimensional electron gas at the [100] silicon surface is observed in luminescence spectra of metal-oxide-semiconductor (MOS) structures. A new effect of anisotropic paramagnetic reduction of the luminescence line indicates a strong influence of the Kondo correlations on electron paramagnetism of the excitons.

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