Spin-polarized transport through a band-gap-matched ZnSe/Zn_{1-x}Mn_{x} Se/ZnSe/Zn_{1-x}Mn_{x}Se/ZnSe multilayer structure is investigated. The resonant transport is shown to occur at different energies for different spins owing to the split of spin subbands in the paramagnetic layers. It is found that the polarization of current density can be reversed in a certain range of magnetic field, with the peak of polarization moving towards a stronger magnetic field for increasing the width of central ZnSe layer while shifting towards an opposite direction for increasing the width of paramagnetic layer. The reversal is limited in a small-size system. A strong suppression of the spin up component of the current density is present at high magnetic field. It is expected that such a reversal of the polarization could act as a possible mechanism for a selective spin filter device.
Using the transfer matrix method and the effective-mass approximation, the effect of resonant states on spin transport is studied in ZnSe/ZnMnSe/ZnSe/ZnMnSe/ZnSe structures under the influence of both electric and magnetic fields. The numerical results show that the ZnMnSe layers, which act as spin filters, polarize the electric currents. Variation of thickness of the central ZnSe layer shifts the resonant levels and exhibits an oscillatory behavior in spin current densities. It is also shown that the spin polarization of the tunneling current in geometrical asymmetry of the heterostructure wh…
Existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is evidenced experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective band gap of the structure; they are characterized by a high density and high carrier capture rate. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.
We have studied the effects of Mn concentration on the ballistic spin-polarized transport through diluted magnetic semiconductor heterostructures with a single paramagnetic layer. Using a fitted function for zero-field conduction band offset based on the experimental data, we found that the spin current densities strongly depend on the Mn concentration. The magnitude as well as the sign of the electron-spin polarization and the tunnel magnetoresistance can be tuned by varying the Mn concentration, the width of the paramagnetic layer, and the external magnetic field. By an appropriate choice of…
Using a single-band model, the lowest transition energy was analysed between the lowest unoccupied molecular orbital (LUMO) of the conduction band and the highest occupied molecular orbital (HOMO) of the valence band. We focus on categorising the confinement strength in type-II core-shell quantum dots (CSQDs) based on the step-potential and show how it will affect their transition energy. Our model is applied to CSQDs of the heterostructures PbS/CdS and ZnTe/ZnSe through narrow and wide band gaps, respectively. It found that PbS/CdS CSQDs demonstrates a strong confinement in which their transi…
Magnetic doping of semiconductor nanostructures is actively pursued for applications in magnetic memory and spin-based electronics. Central to these efforts is a drive to control the interaction strength between carriers (electrons and holes) and the embedded magnetic atoms. In this respect, colloidal nanocrystal heterostructures provide great flexibility via growth-controlled `engineering' of electron and hole wavefunctions within individual nanocrystals. Here we demonstrate a widely tunable magnetic sp-d exchange interaction between electron-hole excitations (excitons) and paramagnetic manga…
Multilayer van der Waals (vdWs) heterostructures assembled by diverse atomically thin layers have demonstrated a wide range of fascinating phenomena and novel applications. Understanding the interlayer coupling and its correlation effect is paramount for designing novel vdWs heterostructures with desirable physical properties. Using a detailed theoretical study of 2D MoS2-graphene (GR)-based heterostructures based on state-of-the-art hybrid density functional theory, we reveal that for 2D few-layer heterostructures, vdWs forces between neighboring layers depend on the number of layers. Compare…
We use first-principle density functional theory (DFT) to study the transport properties of single and double barrier heterostructures realized by stacking multilayer h-BN or BC$_{2}$N, and graphene films between graphite leads. The heterostructures are lattice matched. The considered single barrier systems consist of layers of up to five h-BN or BC$_{2}$N monoatomic layers (Bernal stacking) between graphite electrodes. The transmission probability of an h-BN barrier exhibits two unusual behaviors: it is very low also in a classically allowed energy region, due to a crystal momentum mismatch b…
We present a theory for carrier transport in semiconducting nanoscale heterostructures that emphasizes the effects of strain at the interface between two different crystal structures. An exactly solvable model shows that the interface region, or junction, acts as a scattering potential that facilitates charge separation but also supports bound interfacial states. As a case study, we model a Type-II CdS/ZnSe heterostructure. After advancing a theory similar to that employed in model molecular conductance calculations, we calculate the electron and hole photocurrents and conductances, including …
Combining both vertical and in-plane two-dimensional (2D) heterostructures opens up the possibility to create an unprecedented architecture using 2D atomic layer building blocks. The thermal transport properties of such mixed heterostructures, critical to various applications in nanoelectronics, however, have not been thoroughly explored. Herein, we construct two configurations of multilayer in-plane graphene/hexagonal boron nitride (Gr/h-BN) heterostructures (i.e. mixed heterostructures) via weak van der Waals (vdW) interactions and systematically investigate the dependence of their interfaci…
Spin transport analysis for a spin pseudovalve-type L_l/SC/L_r trilayer for L = {FeCr, Fe, Co, NiFe, Ni} and SC = {GaSb, InSb, InAs, GaAs, ZnSe}
Instituto de Física La Plata IFLP-CONICET, CCT La Plata. Departamento de Física, Facultad de Ciencias Exactas, Universidad Nacional de La Plata UNLP（拉普拉塔物理研究所 (IFLP-CONICET)、拉普拉塔中央科学技术区、拉普拉塔国立大学理学院）；Grupo de Ciencia y Tecnología de Materiales Cerámicos CYTEMAC, Departamento de Física, Facultad de Ciencias Naturales, Exactas y de la Educación, Universidad del Cauca UNICAUCA（考卡大学自然科学、精确与教育学院物理系陶瓷材料科学与技术小组）
The concept of swapping the two most important spin interactions -- exchange and spin-orbit coupling -- is proposed based on two-dimensional multilayer van der Waals heterostructures. Specifically, we show by performing realistic ab initio simulations, that a single device consisting of a bilayer graphene sandwiched by a 2D ferromagnet Cr$_2$Ge$_2$Te$_6$ (CGT) and a monolayer WS$_2$, is able not only to generate, but also to swap the two interactions. The highly efficient swapping is enabled by the interplay of gate-dependent layer polarization in bilayer graphene and short-range spin-orbit an…
The so called quantum spin Hall phase is a topologically non trivial insulating phase that is predicted to appear in graphene and graphene-like systems. In this work we address the question of whether this topological property persists in multilayered systems. We consider two situations: purely multilayer graphene and heterostructures where graphene is encapsulated by trivial insulators with a strong spin-orbit coupling. We use a four orbital tight-binding model that includes the full atomic spin-orbit coupling and we calculate the $Z_{2}$ topological invariant of the bulk states as well as th…
Multilayer van der Waals (vdWs) semiconductors have great promising application in high-performance optoelectronic devices. However, the photoconductive photodetectors based on layered semiconductors often suffer from large dark current and high external driven bias voltage. Here, we report a vertical van der Waals heterostructures (vdWHs) consisting of multilayer indium selenide (InSe) and tellurium (Te). The multilayer InSe-Te vdWHs device shows a record high forward rectification ratio greater than 107 at room temperature. Furthermore, an ultrasensitive and broadband photoresponse photodete…
Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here we report novel multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. These…
We demonstrate the tuneablity of the ultrafast energy flow in magnetic/non-magnetic bilayer structures by changing the wavelength of the optical excitation. This is achieved by an advanced description of the temperature based $μ$T-model that explicitly considers the wavelength- and layer-dependent absorption profile within multilayer structures. For the exemplary case of a Ni/Au bilayer, our simulations predict that the energy flow from Ni to Au is reversed when changing the wavelength of the excitation from the infrared to the ultraviolet spectral range. These predictions are fully supported …
Using a combination of magnetometry and magnetotransport techniques, we studied temperature and magnetic field behavior of magnetization in Py/Gd heterostructures. It was shown quantitatively that proximity with Py enhances magnetic order of Gd. Micromagnetic simulations demonstrate that a spin-flop transition observed in a Py/Gd bilayer is due to exchange-spring rotation of magnetization in the Gd layer. Transport measurements show that the magnetoresistance of a [Py(2 nm)/Gd(2 nm)]25 multilayer changes sign at the compensation temperature and below 20 K. The positive magnetoresistance above …
Digital Magnetic Heterostructures (DMH) are semiconductor structures with magnetic monolayers. Here we study electronic and magneto-transport properties of shallow modulation-doped (ZnSe/ZnCdSe) DMHs with spin-5/2 Mn impurities. We compare the "reservoir" model, possibly relevant to shallow geometries, to the usual "constant-density" model. Our results are obtained by solving the Kohn-Sham equations within the Local Spin Density Approximation (LSDA). In the presence of a magnetic field, we show that both models exhibit characteristic behaviors for the electronic structure, two-dimensional carr…
In a study of the ferromagnetic phase of a multilayer digital ferromagnetic semiconductor in the mean-field and effective-mass approximations, we find the exchange interaction to have the dominant energy scale of the problem, effectively controlling the spatial distribution of the carrier spins in the digital ferromagnetic heterostructures. In the ferromagnetic phase, the majority and minority carriers tend to be in different regions of the space (spin separation). Hence, the charge distribution of carriers also changes noticeably from the ferromagnetic to the paramagnetic phase. An example of…
We study the anomalous Josephson effect, as well as the dependence on the direction of the critical Josephson current, in an S/N/S junction, where the normal part is realized by alternating spin-orbit coupled and ferromagnetic layers. We show that to observe these effects it is sufficient to break spin rotation and time reversal symmetry in spatially separated regions of the junction. Moreover, we discuss how to further improve these effects by engineering multilayers structures with more that one couple of alternating layers.
We study the switching-process of the magnetization in a ferromagnetic-normal-metal multilayer system by a spin polarized electrical current via the spin transfer torque. We use a spin drift-diffusion equation (SDDE) and the Landau-Lifshitz-Gilbert equation (LLGE) to capture the coupled dynamics of the spin density and the magnetization dynamic of the heterostructure. Deriving a fully analytic solution of the stationary SDDE we obtain an accurate, robust, and fast self-consistent model for the spin-distribution and spin transfer torque inside general ferromagnetic/normal metal heterostructures…
One-dimensional (1D) topologically protected states are usually formed at the interface between two-dimensional (2D) materials with different topological invariants. Therefore, 1D chiral interface channels (CICs) can be created at the boundary of two quantum anomalous Hall (QAH) insulators with different Chern numbers. Such a QAH junction can function as a chiral edge current distributer at zero magnetic field, but its realization remains challenging. Here, by employing an in-situ mechanical mask, we use molecular beam epitaxy (MBE) to synthesize QAH insulator junctions, in which two QAH insul…
The isothermal magnetic entropy changes are studied in Ni80Fe20/Ni67Cu33/Co90Cu10/Mn80Ir20 stacks at temperatures near the Curie point of the Ni67Cu33 spacer by applying magnetic fields in a few tens of Oersted. Such low fields were sufficient for toggling magnetic moments in the soft ferromagnetic (FM) layer (Ni80Fe20). It is found out that this switching provides the magnetic entropy change, which is up to 20 times larger than that achievable in a single Ni67Cu33 film subjected to such low fields. Our finding holds promise to be utilized in the magnetocaloric devices that would be based on F…
We analyze the phase diagram of multilayer-graphene sandwiched between identical transition metal dichalcogenides. Recently realized in all van-der-Wall heterostructures, these sandwiches induce sizable (1-15 meV) spin orbit coupling in the graphene, offering a way to engineer topological band-structures in a pristine and gate-tunable platform. We find a rich phase diagram that depends on the number of layers $N$ and the gate-tunable perpendicular electric field. For $N > 1$ and odd, the system is a strong 2D topological insulator with a gap equal to the strength of proximity-induced Ising spi…
Exchange-dominated frequency shift of spin-wave nonreciprocal dispersion relation in planar magnetic multilayers
Universidad Católica del Norte（天主教辅仁大学北部分校）；Helmholtz-Zentrum Dresden - Rossendorf, Institute of Ion Beam Physics and Materials Research（德累斯顿-罗森多夫亥姆霍兹中心离子束物理与材料研究所）
The ultrashort laser excitation of Co/Pt magnetic heterostructures can effectively generate spin and charge currents at the interfaces between magnetic and nonmagnetic layers. The direction of these photocurrents can be controlled by the helicity of the circularly polarized laser light and an external magnetic field. Here, we employ THz time-domain spectroscopy to investigate further the role of interfaces in these photo-galvanic phenomena. In particular, the effects of either Cu or ZnO interlayers on the photocurrents in Co/X/Pt (X = Cu, ZnO) have been studied by varying the thickness of the …
Most studies on moiré superlattices formed from a stack of h-BN and graphene have focused on single layer graphene; graphene with multiple layers is less understood. Here, we show that a moiré superlattice of multilayer graphene shows new features arising from the anisotropic Fermi surface affected by the superlattice structure. The moiré superlattice of a h-BN/AB-stacked tetralayer graphene heterostructure exhibited resistivity peaks showing a complicated dependence on the perpendicular electric field. The peaks were not due to secondary Dirac cones forming, but rather opening of the energy g…
Two-dimensional (2D) transition metal dichalcogenide (TMD) nanosheets exhibit remarkable electronic and optical properties. The 2D features, sizable bandgaps, and recent advances in the synthesis, characterization, and device fabrication of the representative MoS$_2$, WS$_2$, WSe$_2$, and MoSe$_2$ TMDs make TMDs very attractive in nanoelectronics and optoelectronics. Similar to graphite and graphene, the atoms within each layer in 2D TMDs are joined together by covalent bonds, while van der Waals interactions keep the layers together. This makes the physical and chemical properties of 2D TMDs …
Photoluminescence (PL) from excitons serves as a powerful tool to characterize the optoelectronic property and band structure of semiconductors, especially for atomically thin 2D transition metal chalcogenide (TMD) materials. However, PL quenches quickly when the thickness of TMD material increases from monolayer to few-layers, due to the change from direct to indirect band transition. Here we show that PL can be recovered by engineering multilayer heterostructures, with the band transition reserved to be direct type. We report emission from layer engineered interlayer excitons from these mult…
We studied the spin torque efficiency and the Dzyaloshinskii-Moriya interaction (DMI) of heterostructures that contain interface(s) of Ir and Co. The current-induced shifts of the anomalous Hall loops were used to determine the spin torque efficiency and DMI of [Pt/Co/X] multilayers (X=Ir, Cu) as well as Ir/Co and Pt/Ir/Co reference films. We find the effective spin Hall angle and the spin diffusion length of Ir to be ~0.01 and less than ~1 nm, respectively. The short spin diffusion length and the high conductivity make Ir an efficient spin sink layer. Such spin sink layer can be used to contr…
We show that odd-parity superconductivity occurs in multilayer Rashba systems without requiring spin-triplet Cooper pairs. A pairing interaction in the spin-singlet channel stabilizes the odd-parity pair-density-wave (PDW) state in the magnetic field parallel to the two-dimensional conducting plane. It is shown that the layer-dependent Rashba spin-orbit coupling and the orbital effect play essential roles for the PDW state in binary and tricolor heterostructures. We demonstrate that the odd-parity PDW state is a symmetry-protected topological superconducting state characterized by the one-dime…
La(0.7)Sr(0.3)MnO3/BiFeO3 and La(0.7)Sr(0.3)MnO3/PbZr20Ti80O3 epitaxial heterostructures have been grown on SrTiO3 substrates. Spin wave resonances are used to study interface properties of the ferromagnetic La(0.7)Sr(0.3)MnO3. We find that the addition of the BiFeO3 or PbZr20Ti80O3 causes out-of-plane surface pinning of the La(0.7)Sr(0.3)MnO3. We are able to place new limits on the exchange constant D of La(0.7)Sr(0.3)MnO3 grown on these substrates and confirm the presence of uniaxial and biaxial anisotropies caused by the SrTiO3 substrate.
We use electron transport to characterize monolayer graphene - multilayer MoS2 heterostructures. Our samples show ambipolar characteristics and conductivity saturation on the electron branch which signals the onset of MoS2 conduction band population. Surprisingly, the carrier density in graphene decreases with gate bias once MoS2 is populated, demonstrating negative compressibility in MoS2. We are able to interpret our measurements quantitatively by accounting for disorder and using the random phase approximation (RPA) for the exchange and correlation energies of both Dirac and parabolic-band …
Terahertz emission spectroscopy of ultrathin multilayers of magnetic and heavy metals has recently attracted much interest. This method not only provides fundamental insights into photoinduced spin transport and spin-orbit interaction at highest frequencies but has also paved the way to applications such as efficient and ultrabroadband emitters of terahertz electromagnetic radiation. So far, predominantly standard ferromagnetic materials have been exploited. Here, by introducing a suitable figure of merit, we systematically compare the strength of terahertz emission from X/Pt bilayers with X b…
Quasi-1D Planar Magnetic Topological Heterostructure
MIPT（莫斯科物理技术学院）；Abrikosov Center for Theoretical Physics, MIPT（莫斯科物理技术学院阿布里科索夫理论物理中心）；Institute of Physics of DFRS, Russian Academy of Sciences（俄罗斯科学院达吉斯坦共和国科学中心物理研究所）
We describe a theoretical approach for spin-polarized hot-electron transport, as it occurs after excitation by ultrafast optical pulses in heterostructures formed by ferromagnetic and normal metals. We formulate a spin-dependent particle-in-cell model that solves the Boltzmann equation for excited electrons. It includes lifetimes and transmission coefficients as parameters, which can be taken from ab-initio calculations or experiment, and can be easily extended to multilayer systems. This approach is capable of describing electron transport in the ballistic, super-diffusive and diffusive regim…
Normal-incidence transmission and dispersion properties of optical multilayers and one-dimensional stepwise potential barriers in the non-tunneling regime are analytically investigated. The optical paths of every constituent layer in a multilayer structure, as well as the parameters of every step of the stepwise potential barrier, are constrained by a generalized quarter-wave condition. No other restrictions on the structure geometry is imposed, i.e., the layers are arranged arbitrarily. We show that the density of states (DOS) spectra of the multilayer or barrier in question are subject to in…
The quantum spin Hall insulator (QSHI) state has been demonstrated in two semiconductor systems - HgTe/CdTe quantum wells (QWs) and InAs/GaSb QW bilayers. Unlike the HgTe/CdTe QWs, the inverted band gap in InAs/GaSb QW bilayers does not open at the $Γ$ point of the Brillouin zone, preventing the realization of massless Dirac fermions. Here, we propose a new class of semiconductor systems based on InAs/Ga(In)Sb multilayers, hosting a QSHI state, a graphene-like phase and a bilayer graphene analogue, depending on their layer thicknesses and geometry. The QSHI gap in the novel structures can reac…
We report strongly enhanced perpendicular magnetic anisotropy (PMA) of Co films by graphene coating from both first-principles and experiments. Our calculations show that graphene can dramatically boost the surface anisotropy of Co films up to twice the value of its pristine counterpart and can extend the out-of-plane effective anisotropy up to unprecedented thickness of 25~Å. These findings are supported by our experiments on graphene coating on Co films grown on Ir substrate. Furthermore, we report layer-resolved and orbital-hybridization-resolved anisotropy analysis which help understanding…
By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic properties [2-5]. However, various adsorbates become trapped between layers during their assembly, and this not only affects the resulting quality but also prevents the formation of a true artificial layered crystal upheld by van der Waals interaction, creating instead a laminate glued together by contamination. Transmission electron microscopy (TEM) has shown that graphene and boron nitride monolayers, the two best charact…
The advent of topological phases of matter revealed a variety of observed boundary phenomena, such as chiral and helical modes found at the edges of two-dimensional (2D) topological insulators. Antichiral states in 2D semimetals, i.e., copropagating edge modes on opposite edges compensated by a counterpropagating bulk current, are also predicted, but, to date, no realization of such states in a solid-state system has been found. Here, we put forward a procedure to realize antichiral states in twisted van der Waals multilayers, by combining the electronic Dirac-cone spectra of each layer throug…
Photoexcited intralayer excitons in van der Waals heterostructures (vdWHs) with type-II band alignment have been observed to tunnel into interlayer excitons on ultrafast timescales. Such interlayer excitons have sufficiently long lifetimes that inducing dissociation with external in-plane electric fields becomes an attractive option of improving efficiency of photocurrent devices. In the present paper, we calculate interlayer exciton binding energies, Stark shifts, and dissociation rates for six different transition metal dichalcogenide (TMD) vdWHs using a numerical procedure based on exterior…
Combined diverse two-dimensional (2D) materials for semiconductor interfaces are attractive for electrically controllable carrier confinement to enable excellent electrostatic control. We investigated the transport characteristic in heterointerface of multilayer molybdenum disulfide and hexagonal boron nitride (MoS$_2$/h-BN) to reveal that the charge transfer switching (CTS) is highly dependent on both the local gate constriction and bias in the channel. Notably, the CTS is shown to be controlled at a molecular level through electrotunable gated constriction. The resulting significant change i…
We report on the results of investigation the conductivity and magnetoresistance (MR) temperature dependencies for the two strained multilayer p-type Ge/Ge_{1-x}Si_x heterostructures. The usual logarithmic temperature dependencies for zero magnetic field conductivity due to the weak localization (WL) and electron- electron interaction (EEI) effects take place in both samples. For one of the samples the negative MR is observed in a whole range of magnetic fields up to ~1T at T <=12K, but for the other sample the MR transforms from the negative to positive at B >= 0.2T and T >=1.3K. We attribute…
