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arXiv 0801.0144cond-mat.mtrl-sci
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Characterization of ZnO:Si Nanocomposite Films Grown by Thermal Evaporation

Shabnam Siddiqui, Chhaya Ravi Kant, P. Arun, N. C. Mehra

英文摘要:

Nanocomposite thin films of Zinc Oxide and Silicon were grown by co-evaporating powdered ZnO and Si. This resulted in nanocrystallites of ZnO being embedded in Silicon. The mismatch in crystal structures of constituent materials result in the ZnO nanocrystals to exist in a state of stress. This along with oxygen vacancies in the samples result in good Photoluminescence emission at 520nm. Also, Silicon background gave a photoluminescence emission at 620nm. The structure was found quite stable over time since the homgenously dispersed ZnO nanocrystals do not agglomerate. The nanocomposites promises to be a useful candidate for future optoelectronic devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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