NSN异质结构中的非局域电子输运和交叉电阻峰
Non-local electron transport and cross-resistance peak in NSN heterostructures
摘要：
我们发展了一个微观理论，描述了三端NSN器件的非局部电阻的温度依赖性的峰值。这个峰值出现在足够高的温度作为准粒子/电荷不平衡和subgap（Andreev）的贡献之间的竞争的结果的电导矩阵。该峰的高度和形状都表明幂律依赖于超导体厚度$L$，而零温度非局部电阻随着$L$的增加（大致）呈指数衰减。在最近的实验中也观察到了类似的行为。
英文摘要：
We develop a microscopic theory describing the peak in the temperature dependence of the non-local resistance of three-terminal NSN devices. This peak emerges at sufficiently high temperatures as a result of a competition between quasiparticle/charge imbalance and subgap (Andreev) contributions to the conductance matrix. Both the height and the shape of this peak demonstrate the power law dependence on the superconductor thickness $L$ in contrast to the zero-temperature non-local resistance which decays (roughly) exponentially with increasing $L$. A similar behavior was observed in recent experiments.
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