室温下低能单离子对微米级晶体管冲击的探测
Detection of low energy single ion impacts in micron scale transistors at room temperature
摘要：
我们报告的检测单离子的影响，通过监测在室温下的场效应晶体管（FET）的源漏电流的变化。通过电子束辅助蚀刻在平面微尺度FET的层间沟道和栅电极中形成注入孔。当离子（121 Sb 12+、14+、Xe 6 +; 50至70 keV）撞击沟道区域时，由于在栅极氧化物中产生带正电荷的缺陷，FET电流增加。植入损伤修复的快速热退火，使迭代周期的设备掺杂和电特性的发展单原子器件和掺杂剂的波动影响的研究。
英文摘要：
We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes of planar, micro-scale FETs by electron beam assisted etching. FET currents increase due to the generation of positively charged defects in gate oxides when ions (121Sb12+, 14+, Xe6+; 50 to 70 keV) impinge into channel regions. Implant damage is repaired by rapid thermal annealing, enabling iterative cycles of device doping and electrical characterization for development of single atom devices and studies of dopant fluctuation effects.
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