硅单电子晶体管的Single Shot测量
Single shot measurement of a silicon single electron transistor
摘要：
我们已经制作了一个定制的低温互补金属氧化物半导体（CMOS）集成电路，具有更高的测量带宽相比，传统的室温电子。这允许实施Single Shot操作，并观察用微波脉冲照射的磷掺杂硅单电子晶体管的电流的实时演变。弛豫时间高达90 us的观察，表明设备内的隔离电子激发的存在。预期这些与长的退相干时间相关联，并且该设备可能适合于量子信息处理。
英文摘要：
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorous-doped silicon single electron transistor that was irradiated with a microwave pulse. Relaxation times up to 90 us are observed, suggesting the presence of well isolated electron excitations within the device. It is expected that these are associated with long decoherence time and the device may be suitable for quantum information processing.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
