饱和条件下场效应晶体管中依赖于掺杂浓度的沟道电势的计算
Calculation of DOS-Dependent Channel Potentials in FETs in the Saturation Condition
摘要：
我们使用器件模拟器计算了具有不同局域态密度的场效应晶体管沟道中的电势Vch的函数。在饱和条件下，Vch满足解析函数Vch（y）=Vg（1-（1-y/L）k），其中Vg为栅偏压，y为沿沟道的位置，L为沟道长度.即使DOS有很大的变化，k的幂也取决于DOS，范围从0到0.5。结果，饱和条件下的总感应电荷密度可以通过引入范围在0.65和1.0之间的校正因子α以类似于线性条件的方式表示。
英文摘要：
We calculated functions for the potential, Vch, in the channel of a field effect transistor with various densities of the localized states (DOS) by using a device simulator. In the saturation condition, Vch is found to fit satisfactorily to the analytical function, Vch(y)=Vg(1-(1-y/L) k), where Vg is the gate bias, y is the position along the channel, and L is the channel length. The power k, which depends on the DOS, ranges from 0 to 0.5 even with an extensive variation of DOS. As a result, the total induced charge density in the saturation condition can be expressed a way similar to the linear condition by introducing a correction factor, alpha, ranging between 0.65 and 1.0.
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