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arXiv 0706.4372quant-ph
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半导体二能级系统Rabi振荡的驱动相关阻尼

Driving-dependent damping of Rabi oscillations in two-level semiconductor systems

D. Mogilevtsev, A. P. Nisovtsev, S. Kilin, S. B. Cavalcanti, H. S. Brandi, L. E. Oliveira

摘要:

我们提出了一种机制来解释拉比振荡的阻尼与本地化的半导体系统中的驱动脉冲面积增加的性质,并提出了一个一般的方法,描述了一个相干驱动的两能级系统与退相水库相互作用。目前的计算表明,正如实验观察到的那样,水库的非马尔科夫特征导致退相速率对驱动场强度的依赖性。此外,我们已经表明,拉比振荡的阻尼可能会发生由于不同的退相机制的固定和非固定的影响,由于耦合到环境。目前的计算结果与现有的实验测量结果相当吻合。

英文摘要:

We propose a mechanism to explain the nature of the damping of Rabi oscillations with increasing driving-pulse area in localized semiconductor systems, and have suggested a general approach which describes a coherently driven two-level system interacting with a dephasing reservoir. Present calculations show that the non-Markovian character of the reservoir leads to the dependence of the dephasing rate on the driving-field intensity, as observed experimentally. Moreover, we have shown that the damping of Rabi oscillations might occur as a result of different dephasing mechanisms for both stationary and non-stationary effects due to coupling to the environment. Present calculated results are found in quite good agreement with available experimental measurements.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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