From a macroscopic point of view phase transitions as surface melting or two dimensional (2D) towards three dimensional (3D) growth mode (Stranski-Krastanov transition) can be described in terms of Gibbs excess quantity duly amended by size effects (since usual Gibbs excess quantities are only well defined for semi-infinite systems). The aim of this study is to consider such amended quantities to describe surface melting and Stranski-Krastanov transition of epitaxial layers. the so-introduced size effects allows us to predict the equilibrium thickness of the wetting layer of the Stranski-Krastanov growth mode and to describe and classify two different melting cases: the incomplete melting relayed by a first order transition and the continuous premelting relayed by continuous overheating
Stoichiometric Epitaxial Strontium Titanate Thin Films on Silicon by High-Temperature Sr Segregation
Imec；Department of Materials Engineering (MTM), KU Leuven（荷语鲁汶大学材料工程系）；Physics Department, Jean Monnet University（圣艾蒂安让·穆内大学物理系）；Department of Information Technology (INTEC), Photonics Research Group, Ghent University（根特大学信息与科技学院光子学研究组）
Hybrid Epitaxial Al/InGaAs system: Solid-state dewetting and Al facet formation
University of Waterloo（滑铁卢大学）；Waterloo Institute for Nanotechnology, University of Waterloo（滑铁卢大学纳米技术研究所）；Quantum Nanofabrication and Characterization Facility (QNFCF), University of Waterloo（滑铁卢大学量子纳米加工与表征设施）；Canadian Light Source Inc.（加拿大光源公司）；Institute for Quantum Computing, University of Waterloo（滑铁卢大学量子计算研究所）
Molecular beam epitaxy preparation and in situ characterization of FeTe thin films
我们利用分子束外延（MBE）技术在Te限制的生长条件下合成了Fe $_{1+y}$ Te薄膜。我们发现，外延逐层生长是可能的，在很宽的范围内的过量Fe值，宽于预期从什么是已知的散装材料。使用X射线磁性圆二色光谱在Fe L $_{2,3}$和Te M $_{4,5}$边缘，我们观察到，具有高过量Fe的薄膜包含铁磁团簇，而具有较低过量Fe的薄膜保持铁磁团簇。此外，X射线吸收光谱表明，它是可能的，以获得与高品质的块状单晶Fe $_{1.14}$ Te的电子结构非常相似的膜。我们的研究结果表明，分子束外延与Te有限的增长可能提供一个机会，合成FeTe薄膜与少量的过剩Fe来接近一个可能的超导相。
Thickness-dependent degradation and optical access in epitaxial 2H-MoTe2 protected by metallic capping layers
University of Lodz（罗兹大学）；University of Warsaw（华沙大学）；Military University of Technology（军事理工大学）；Polish Academy of Sciences, Institute of Physics（波兰科学院物理研究所）；Ensemble3 Centre of Excellence（卓越中心 Ensemble3）
High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)
PtSe 2作为一种高迁移率二维材料，在微电子学、光电探测和自旋电子学等领域有着广泛的应用前景。在绝缘衬底上生长具有晶片级均匀性的高质量PtSe 2是电子输运研究和器件实际应用的先决条件。在这里，我们报告的高度取向的少层PtSe 2 ZnO（0001）的分子束外延生长。用电子衍射、X射线衍射、原子力显微镜和透射电子显微镜对薄膜的晶体结构进行了表征。与生长在石墨烯、蓝宝石、云母、SiO2和Pt（111）上的PtSe 2层的比较表明，在绝缘衬底中，ZnO（0001）产生具有优异结构质量的膜。在ZnO/PtSe 2外延层上进行的霍尔测量显示出明显的半导体特性和高迁移率，室温下超过200 cm ~ 2 V ~（-1）s ~（-1），低温下高达447 cm ~ 2 V ~（-1）s ~（-1）。
