We calculate the conductance G of a bipolar junction in a graphene nanoribbon, in the high-magnetic field regime where the Hall conductance in the p-doped and n-doped regions is 2e^2/h. In the absence of intervalley scattering, the result G=(e^2/h)(1-cos Phi) depends only on the angle Phi between the valley isospins (= Bloch vectors representing the spinor of the valley polarization) at the two opposite edges. This plateau in the conductance versus Fermi energy is insensitive to electrostatic disorder, while it is destabilized by the dispersionless edge state which may exist at a zigzag boundary. A strain-induced vector potential shifts the conductance plateau up or down by rotating the valley isospin.
Graphene's outstanding mechanical properties lend to strain engineering, allowing for future valleytronics and nanoelectromechanic applications. In this work, we have found that a Gaussian-shaped strain on a graphene p-n junction results in quantum Hall conductance oscillations due to the rotated angle between valley isospins at the graphene armchair edges. Furthermore, additional Fano resonances were observed as the value of the strain-induced pseudo-magnetic field approaches that of the external magnetic field. The lifted valley degeneracy, stemming from the interplay between the real and ps…
In the presence of crossed electric and magnetic fields, a graphene ribbon has chiral states running along sample edges and along boundaries between $p$-doped and $n$-doped regions. We here consider the scattering of edge states into interface states, which takes place whereever the $pn$ interface crosses the sample boundary, as well as the reverse process. For a graphene ribbon with armchair boundaries, the evolution of edge states into interface states and {\em vice versa} is governed by the conservation of valley isospin. Although valley isospin is not conserved in simplified models of a ri…
The transport properties of Chern insulator junctions generated by bipolar junctions in quantum Hall graphene are theoretically studied in the coherent regime. Coherent transport across the junction exhibits two mesoscopic features: valley-isospin dependence of the quantum Hall conductance, and the Aharonov-Bohm (AB) effects with the interface channels. We demonstrate that the valley-isospin dependence can be measured in a graphene sample with perfect edge terminations, resulting in conductance oscillation for the smallest Chern number case. On the other hand, while conductance plateaus are fo…
We show that bilayer graphene exhibits magneto-electric effects that are formally similar to those commonly seen in band insulators with broken inversion and time-reversal symmetries. Three unusual features characterize the magneto-electric responses exhibited by bilayer graphene: (i) unlike most other magneto-electric media, bilayer graphene is a conductor, (ii) bilayer graphene has a non-quantized magneto-electric coupling even though its electronic structure does not break parity and time-reversal symmetry, and (iii) the magnitude of the magneto-electric coupling in bilayer graphene is dete…
We study spin and valley transports in junctions composed of silicene and topological crystalline insulators. We consider normal/magnetic/normal Dirac metal junctions where a gate electrode is attached to the magnetic region. In normal/antiferromagnetic/normal silicene junction, we show that the current through this junction is valley and spin polarized due to the coupling between valley and spin degrees of freedom, and the valley and spin polarizations can be tuned by local application of a gate voltage. In particular, we find a fully valley and spin polarized current by applying the electric…
We investigate charge, valley, and spin transports in normal/ferromagnetic/normal silicene junc- tion. We show that the charge, valley, and spin conductances in this junction oscillate with the length of the ferromagnetic silicene. It is also found that the current through this junction is valley and spin polarized due to the coupling between valley and spin degrees of freedom, and the valley and spin polarizations can be tuned by local application of a gate voltage. In particular, we find fully valley and spin polarized current by applying the electric field. We also obtain the condition for …
We study spin-valley and lattice-pseudo spin currents in a dual ferromagnetic-gated silicene-based junction. Silicene has buckled atomic structure which allows us to take sublattice-dependent ferromagnetism into account in the investigation. One of the study results show that transmission at the junctions exhibits anisotropic property only in anti-parallel cases. Interestingly, the studied junctions can be switched from a pure spin-polarizer to a pure valley-polarizer by reversing directions of exchange fields in the parallel junctions. The perfect control of spin-valley currents can be done o…
At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall channels co-propagate. It has been predicted by Tworzidło and co-workers that if only the lowest Landau level is filled on both sides of the junction, the conductance is determined by the valley (isospin) polarization at the edges and by the width of the flake. This effect remained hidden so far due to scattering between the channels co-propagating along the \tex…
Low-energy excitations in graphene exhibit relativistic properties due to the linear dispersion relation close to the Dirac points in the first Brillouin zone. Two of the Dirac points located at opposite corners of the first Brillouin zone can be chosen as inequivalent, representing a new valley degree of freedom, in addition to the charge and spin of an electron. Using the valley degree of freedom to encode information has attracted significant interest, both theoretically and experimentally, and gave rise to the field of valleytronics. We study a graphene $p$-$n$ junction in a uniform out-of…
We consider a lateral hetero-junction where the left and right leads are made of monolayer graphene and the middle region is made of a gapped tilted Dirac material (borophene or quinoid graphene) illuminated with off-resonant circularly polarized radiation. The tilt parameter $v_t$ makes the band gap indirect and smaller in magnitude as compared to Dirac materials without tilt. Exposure to radiation makes the band gaps of the central region valley-dependent which show their signatures as valley polarized charge and thermal currents, thereby causing a valley Seebeck effect. We study the variati…
We study transport across p-n junctions of gapped two-dimensional semi-Dirac materials: nodal semimetals whose energy bands disperse quadratically and linearly along distinct crystal axes. The resulting electronic properties --- relevant to materials such as TiO$_2$/VO$_2$ multilayers and $α$-(BEDT-TTF)$_2$I$_3$ salts --- continuously interpolate between those of mono- and bi-layer graphene as a function of propagation angle. We demonstrate that tunneling across the junction depends on the orientation of the tunnel barrier relative to the crystalline axes, leading to strongly non-monotonic cur…
Veselago lens focusing in graphene p-n junction is promising for realizations of new generation electron optics devices. However, the effect of the strain-induced Aharonov-Bohm interference in a p-n junction has not been discussed before. We provide an experimentally feasible setup based on the Veselago lens in which the presence of strain can result in both the valley-dependent Lorentz force and Aharonov-Bohm interference. In particular, by employing the Green's function and tight binding methods, we study the strain induced by dislocations and line defects in a p-n junction and show how the …
Graphene pn junction is the brick to build up variety of graphene nano-structures. The analytical formula of the conductance of graphene gradual pn junctions in the whole bipolar region has been absent up to now. In this paper, we analytically calculated that pn conductance with the spin-orbit coupling and stagger potential taken into account. Our analytical expression indicates that the energy gap causes the conductance to drop a constant value with respect to that without gap in a certain parameter region, and manifests that the curve of the conductance versus the stagger potential consists …
We investigate the transport characteristics of monolayer graphene p-n junctions by means of the non-equilibrium Green's function technique. It is shown that thanks to the high interband tunneling of chiral fermions and to a finite bandgap opening when the inversion symmetry of graphene plane is broken, a strong negative-differential-conductance behavior with peak-to-valley ratio as large as a few tens can be achieved even at room temperature. The dependence of this behavior on the device parameters such as the Fermi energy, the barrier height, and the transition length is then discussed.
The paper addresses boundary electronic properties of graphene with a complex edge structure of the armchair/zigzag/armchair type. It is shown that the finite zigzag region supports edge bound states with discrete equidistant spectrum obtained from the Green's function of the continuum Dirac equation. The energy levels exhibit the coupling between the valley degree of freedom and the orbital quantum number, analogous to a spin-orbit interaction. The characteristic feature of the spectrum is the presence of a zero mode, the bound state of vanishing energy. It resides only in one of the graphene…
We investigate charge conductance and spin and valley polarization along with the tunnelling magneto-resistance (TMR) in silicene junctions composed of normal silicene and ferromagnetic silicene. We show distinct features of the conductances for parallel and anti-parallel spin configurations and the TMR, as the ferromagnetic-normal-ferromagnetic (FNF) junction is tuned by an external electric field. We analyse the behavior of the charge conductance and valley and spin polarizations in terms of the independent conductances of the different spins at the two valleys and the band structure of ferr…
We theoretically demonstrate a simple way to significantly enhance the spin/valley polarizations and tunnel- ing magnetoresistnace (TMR) in a ferromagnetic-normal-ferromagnetic (FNF) silicene junction by applying a circularly polarized light in off-resonant regime to the second ferromagnetic (FM) region. We show that the fully spin-polarized current can be realized in certain ranges of light intensity. Increasing the incident energy in the presence of light will induce a transition of perfect spin polarization from positive to negative or vice versa depending on magnetic configuration (paralle…
Lateral-hetero structures of atomic layered materials alter the electronic properties of pristine crystals and provide a possibility to produce useful monolayer materials. We reveal that metal-semiconductor-metal lateral-hetero junctions of $1H$-transition-metal dichalcogenides intrinsically possess conducting channels of electrons with spin-valley locking, e.g., gate electrode. We theoretically investigate the electronic structure and transport properties of the lateral-hetero junctions and show that the hetero-structure produces conducting channels through the $K$ and $K'$ valleys in the sem…
Electron bands in the untwisted bilayer graphene flatten out in a transverse electric field, offering a promising platform for correlated electron physics. We predict that the spin/valley isospin magnetism, resembling that seen in moiré bands, coexists with momentum-polarized phases occurring via a ``flocking transition'' in momentum space. This transition results in the electron momentum distribution being spontaneously displaced relative to the $K$ and $K'$ valley centers. These phases feature unusual observables such as persistent currents in the ground state. Momentum-polarized carriers ``…
The Corbino geometry allows one to investigate the propagation of electric current along a p-n interface in ballistic graphene in the absence of edge states appearing for the familiar Hall-bar geometry. Using the transfer matrix in the angular-momentum space we find that for sufficiently strong magnetic fields the current propagates only in one direction, determined by the magnetic field direction and the interface orientation, and the two valleys, K and K', are equally occupied. Spatially-anisotropic effective mass may suppress one of the valley currents, selected by the external electric fie…
A Zener diode is a paradigmatic device in semiconductor-based electronics that consists of a pn junction where an external electric field induces a switching behavior in the current-voltage characteristics. We study Zener tunneling in HgTe quantum wells and graphene multilayers. We find that the tunneling transition probability depends asymmetrically on the parallel momentum of the carriers to the barrier. In HgTe quantum wells the asymmetry is the opposite for each spin, whereas for graphene multilayers it is the opposite for each valley degree of freedom. In both cases, a spin/valley current…
We show that an $n-n^{-}-n$ junction in 2D semiconductors can flexibly realize two basic valleytronic functions, i.e. valley filter and valley source, with gate controlled switchability between the two. Upon carrier flux passing through the junction, the valley filter and valley source functions are enabled respectively by intra- and inter-valley scatterings, and the two functions dominate respectively at small and large band-offset between the $n$ and $n^{-}$ regions. It can be generally shown that, the valley filter effect has an angular dependent polarity and vanishes under angular integrat…
We study massive Dirac fermion tunneling through time periodic potential in a silicene-based N-TP-N junction, where Ns are normal silicene regions and TP is the time periodic potential barrier. The fermions would absorb or emit photons due to the presence of the Floquet sidebands created in the TP. The nearly perfect spin-valley-sideband filtering is predicted. Applying only the exchange field leads to just only the electron absorbing a single photon almost purely allowed to tunnel through the junction for the large electric field. Reversing direction of electric field can select spin of the a…
We study ballistic transport of Dirac fermions in silicene through arrays of barriers, of width $d$, in the presence of an exchange field $M$ and a tunable potential of height $U$ or depth $-U$. The spin- and valley-resolved conductances as functions of $U$ or $M$, exhibit resonances away from the Dirac point (DP) and close to it a pronounced dip that becomes a gap when a critical electric field $E_z$ is applied. This gap widens by increasing the number of barriers and can be used to realize electric field-controlled switching of the current. The spin $p_s$ and valley $p_v$ polarizations of th…
New phase of matter usually emerges when a given symmetry breaks spontaneously, which can involve charge, spin, and valley degree of freedoms. Here, we report an observation of new correlated insulators evolved from spin polarized states to valley polarized states in AB-BA stacked twisted double bilayer graphene (TDBG). The transition of the isospin polarization is a result of the competition between spin and valley, driven by the displacement field (D). At a high field |D| > 0.7 V/nm, we observe valley polarized correlated insulators with a big Zeeman g factor of ~10, both at v = 2 in the moi…
Because the valleys in the band structure of graphene are related by time-reversal symmetry, electrons from one valley are reflected as holes from the other valley at the junction with a superconductor. We show how this Andreev reflection can be used to detect the valley polarization of edge states produced by a magnetic field. In the absence of intervalley relaxation, the conductance G_NS=2(e^2/h)(1-cos(Theta)) of the junction on the lowest quantum Hall plateau is entirely determined by the angle Theta between the valley isospins of the edge states approaching and leaving the superconductor. …
We analyze theoretically the electronic properties of Aharonov-Bohm rings made of graphene. We show that the combined effect of the ring confinement and applied magnetic flux offers a controllable way to lift the orbital degeneracy originating from the two valleys, even in the absence of intervalley scattering. The phenomenon has observable consequences on the persistent current circulating around the closed graphene ring, as well as on the ring conductance. We explicitly confirm this prediction analytically for a circular ring with a smooth boundary modelled by a space-dependent mass term in …
In a graphene Landau level (LL), strong Coulomb interactions and the fourfold spin/valley degeneracy lead to an approximate SU(4) isospin symmetry. At partial filling, exchange interactions can spontaneously break this symmetry, manifesting as additional integer quantum Hall plateaus outside the normal sequence. Here we report the observation of a large number of these quantum Hall isospin ferromagnetic (QHIFM) states, which we classify according to their real spin structure using temperature-dependent tilted field magnetotransport. The large measured activation gaps confirm the Coulomb origin…
We propose a scheme for coherent rotation of the valley isospin of a single electron confined in a carbon nanotube quantum dot. The scheme exploits the ubiquitous atomic disorder of the nanotube crystal lattice, which induces time-dependent valley mixing as the confined electron is pushed back and forth along the nanotube axis by an applied ac electric field. Using experimentally determined values for the disorder strength we estimate that valley Rabi oscillations with a period on the nanosecond timescale are feasible. The valley resonance effect can be detected in the electric current through…
The valley-Chern and spin-valley-Chern numbers are the key concepts in valleytronics. They are topological numbers in the Dirac theory but not in the tight-binding model. We analyze the bulk-edge correspondence between the two phases which have the same Chern and spin-Chern numbers but different valley-Chern and spin-valley-Chern numbers. The edge state between them is topologically trivial in the tight-binding model but is shown to be as robust as the topological edge. We construct Y-junctions made of topological edges. They satisfy the topological Kirchhoff law, where the topological charges…
Recent experiments by Gutiérrez $\textit{et al.}$ [Nature Phys. $\textbf{12}$, 950 (2016)] on a graphene-copper superlattice have revealed an unusual Kekulé bond texture in the honeycomb lattice --- a Y-shaped modulation of weak and strong bonds with a wave vector connecting two Dirac points. We show that this so-called "Kek-Y" texture produces two species of massless Dirac fermions, with valley isospin locked parallel or antiparallel to the direction of motion. In a magnetic field $B$ the valley degeneracy of the $B$-dependent Landau levels is removed by the valley-momentum locking --- but a …
The effect of resonant tunneling on magnetoresistance (MR) is studied theoretically in a double junction system. We have found that the ratio of the MR of the resonant peak current is reduced more than that of the single junction, whereas that of the valley current is enhanced depending on the change of the discrete energy-level under the change of magnetic field. We also found that the peak current-valley current (PV) ratio decreases when the junction conductance increases.
We theoretically study the superconducting proximity effect in silicene, which features massive Dirac fermions with a tunable mass (band gap), and compute the conductance across a normal/superconductor (N/S) silicene junction, the non-local conductance of an N/S/N junction, and the supercurrent flowing in an S/N/S junction. It is demonstrated that the transport processes consisting of local and non-local Andreev reflection may be efficiently controlled via an external electric field owing to the buckled structure of silicene. In particular, we demonstrate that it is possible to obtain a fully …
We study transport in twisted bilayer graphene and show that electrostatic barriers can act as valley splitters, where electrons from the $K$ ($K'$) valley are transmitted only to e.g.\ the top (bottom) layer, leading to valley-layer locked currents. We show that such a valley splitter is obtained when the barrier varies slowly on the moiré scale and induces a Lifshitz transition across the junction, i.e.\ a change in the Fermi surface topology. Furthermore, we show that for a given valley the reflected and transmitted current are transversely deflected, as time-reversal symmetry is effectivel…
We describe an angularly asymmetric interface-scattering mechanism which allows to spatially separate the electrons in the two low-energy valleys of bilayer graphene. The effect occurs at electrostatically defined interfaces separating regions of different pseudospin polarization, and is associated with the helical winding of the pseudospin vector across the interface, which breaks the reflection symmetry in each valley. Electrons are transmitted with a preferred direction of up to 60 degree over a large energetic range in one of the valleys, and down to -60 degree in the other. In a Y-junctio…
We performed a series of theoretical transport studies on Y-branch electron waveguides which are embedded in mid-size armchair graphene nanoribbons (AGNRs). Non-equilibrium Greens function (NEGF) with different approximations of tight-binding (TB) Hamiltonian has been employed. Using the first nearest hopping approximation, we observed very pronounced conductance quantization, the structure of which depends on geometrical design and shows a spacing of $4e^2/h$, indicating the existence of valley degree of freedom. Moreover, by incorporating the third nearest approximation, we observed seminal …
Topologically protected zero-line modes appear at the interface between two regions of the monolayer graphene in quantum anomalous Hall phase with different Chern number. In the presence of staggered sublattice potential, the band gaps of the two valleys become different, and the phase diagram defined by the Chern number has an additional regime of topologically trivial phase. The interface between the topologically trivial and non-trivial regions hosts zero-line mode in only one valley. By tuning the exchange field, three types of interface that host zero-line modes in selected valley(s) are …
The linear conductance spectrum of a metallic graphene junction formed by interconnecting two gapless graphene nanoribbons is calculated. A strong conductance suppression appears in the vicinity of the Dirac point. We found that such a conductance suppression arises from the antiresonance effect associated with the edge state localized at the zigzag-edged shoulder of the junction. The conductance valley due to the antiresonance is rather robust in the presence of the impurity and vacancy scattering. And the center of the conductance valley can be readily tuned by an electric field exerted on t…
We study a cluster of quantum dots defined within silicene that host confined electron states with spin and valley degrees of freedom. Atomistic tight-binding and continuum Dirac approximation are applied for few-electron system in quest for spontaneous valley polarization driven by inter-dot tunneling and electron-electron interaction, i.e. a valley counterpart of itinerary Nagaoka ferromagnetic ordering recently identified in GaAs square cluster of quantum dots with three excess electrons [P. Dehollain, {\it et al.}, Nature {\bf 579}, 528 (2020)]. We find that for Hamiltonian without intrins…
Graphene matter in a strong magnetic field, realizing one-dimensional quantum Hall channels, provides a unique platform for studying electron interference. Here, using the Landauer-Büttiker formalism along with the tight-binding model, we investigate the quantum Hall (QH) effects in unipolar and bipolar monolayer-bilayer graphene (MLG-BLG) junctions. We find that a Hall bar made of an armchair MLG-BLG junction in the bipolar regime results in valley-polarized edge-channel interferences and can operate a fully tunable Mach-Zehnder (MZ) interferometer device. Investigation of the bar-width and m…
We study a Josephson junction involving an inversion-asymmetric Weyl semimetal in presence of time-reversal symmetric (TRS) or time-reversal symmetry broken tilt in the Weyl spectra. We reveal that both types of tilts in the Weyl nodes lead to a Josephson $0$-$π$ transition and a zero bias valley/chiral supercurrent. Strikingly, the TRS tilt gives rise to a pure valley Josephson current (VJC) and TRS broken tilt induces a pure chirality Josephson current (CJC) in this system. The VJC and CJC are the manifestation of valley symmetry broken and $\mathbb{Z}_2$ symmetry broken by the respective ti…
In graphene, a Kekulé-Y bond texture modifies the electronic band structure generating two concentric Dirac cones with different Fermi velocities lying in the Γ-point in reciprocal space. The energy dispersion results in different group velocities for each isospin component at a given energy. This energy spectrum combined with the negative refraction index in p-n junctions, allows the emergence of an electronic analog of optical birefringence in graphene. We characterize the valley birefringence produced by a circularly symmetric Kekulé patterned and gated region using the scattering approach.…
