arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0705.3428cond-mat.str-el
收藏

Wigner-莫特绝缘体的自掺杂不稳定性

Self-doping instability of the Wigner-Mott insulator

S. Pankov, V. Dobrosavljevic

摘要:

我们提出了一个理论描述的二维(2D)的金属-绝缘体转变(MIT)在没有无序的机制。介绍了描述维格纳晶体中空位-间隙对激发的两带哈伯德模型。发现通过离域这种激发获得的动能导致绝缘体在临界载流子浓度$n=n_c$以上自掺杂的不稳定性,将问题映射到密度驱动的Mott MIT。这种机制提供了一个自然的微观图片的几个令人困惑的实验功能,包括大的有效质量增强,大的电阻率下降,和大的正磁阻的过渡金属侧。我们还提出了清洁的二维电子气作为$n$和平行磁场$B_{\shortparallel}$的函数的全球相图,这与超洁净样品中的实验结果吻合得很好。

英文摘要:

We present a theory describing the mechanism for the two-dimensional (2D) metal-insulator transition (MIT) in absence of disorder. A two-band Hubbard model is introduced, describing vacancy-interstitial pair excitations within the Wigner crystal. Kinetic energy gained by delocalizing such excitations is found to lead to an instability of the insulator to self-doping above a critical carrier concentration $n=n_c$, mapping the problem to a density-driven Mott MIT. This mechanism provides a natural microscopic picture of several puzzling experimental features, including the large effective mass enhancement, the large resistivity drop, and the large positive magneto-resistance on the metallic side of the transition. We also present a global phase diagram for the clean 2D electron gas as a function of $n$ and parallel magnetic field $B_{\shortparallel}$, which agrees well with experimental findings in ultra clean samples.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑