静水应力在决定InN外延层带隙中的作用
The role of hydrostatic stress in determining the bandgap of InN epilayers
摘要：
我们建立了InN外延层的内应力和它们的光学性质，如测量的吸收带边和光致发光发射波长之间的相关性。通过仔细评估的晶格常数的InN外延生长在C-平面蓝宝石衬底上的金属有机气相外延在各种条件下，我们发现，该薄膜主要是在静水应力。这导致带边缘向更高能量的偏移。这种效应是显著的，并且可能是文献中报道的InN带隙中的一些变化的原因。
英文摘要：
We establish a correlation between the internal stress in InN epilayers and their optical properties such as the measured absorption band edge and photoluminescence emission wavelength. By a careful evaluation of the lattice constants of InN epilayers grown on c-plane sapphire substrates under various conditions by metalorganic vapor phase epitaxy we find that the films are under primarily hydrostatic stress. This results in a shift in the band edge to higher energy. The effect is significant, and may be responsible for some of the variations in InN bandgap reported in the literature.
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