生长参数对MOVPE系统中沉积的InN外延层结构特性和带隙的影响
Influence of growth parameters on structural properties and bandgap of InN epilayers deposited in a showerhead MOVPE system
摘要：
从一个详细的分析InN外延层沉积在一个紧密耦合的喷头金属有机物气相外延（MOVPE）系统在各种条件下，我们调查的InN层的晶格常数的生长参数的影响。这些层处于显著的内部流体静压应力下，这影响光学性质。样品通常分为两大类应力，产生的发光发射约为0.8eV和1.1eV。我们可以将层中的内应力与光吸收边的值和PL发射波长相关联。
英文摘要：
From a detailed analysis of InN epilayers deposited in a close-coupled showerhead metalorganic vapour phase epitaxy (MOVPE) system under various conditions we investigate the effect of growth parameters on the lattice constants of the InN layer. The layers are under significant internal hydrostatic stress which influences the optical properties. Samples typically fall into two broad categories of stress, with resultant luminescence emission around 0.8eV and 1.1eV. We can correlate the internal stress in the layer and the value of the optical absorption edge, and the PL emission wavelength.
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