高压下脉冲沉积laser控制GaAs纳米线生长
Growth control of GaAs nanowires using pulsed laser deposition with arsenic over pressure
摘要：
采用脉冲激光烧蚀砷超压法，系统地研究和优化了GaAs纳米线的生长条件。砷超压与作为$_2$分子被引入到系统的多晶GaAs的热分解，以控制化学计量和形状的纳米线在生长过程中。GaAs纳米线在不同的砷压下呈现出不同的几何形状，这可以通过气-液-固机制的不同生长过程来理解。单晶GaAs纳米线具有均匀的直径，长度超过20 $μ$ m，和薄的表面氧化层，并可以潜在地用于进一步的电子表征。
英文摘要：
Using pulsed laser ablation with arsenic over pressure, the growth conditions for GaAs nanowires have been systematically investigated and optimized. Arsenic over pressure with As$_2$ molecules was introduced to the system by thermal decomposition of polycrystalline GaAs to control the stoichiometry and shape of the nanowires during growth. GaAs nanowires exhibit a variety of geometries under varying arsenic over pressure, which can be understood by different growth processes via vapor-liquid-solid mechanism. Single-crystal GaAs nanowires with uniform diameter, lengths over 20 $μ$m, and thin surface oxide layer were obtained and can potentially be used for further electronic characterization.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
