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arXiv 0705.1692cond-mat.str-elcond-mat.mtrl-sci
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NiO:电荷转移绝缘体的相关能带结构

NiO: Correlated Bandstructure of a Charge-Transfer Insulator

J. Kunes, V. I. Anisimov, S. L. Skornyakov, A. V. Lukoyanov, D. Vollhardt

摘要:

采用{ \it ab initio}能带结构方法和动力学平均场论结合量子Monte-Carlo杂质求解器计算了典型电荷转移绝缘体NiO的能带结构.采用一个哈密顿量,其中包括Ni-d和O-p轨道,我们发现很好的协议,从角分辨光电子能谱确定的能带。这解决了固态理论中一个长期存在的问题。最值得注意的是,我们得到了低能Zhang-Rice带与强依赖于k的轨道特性的背景下,先前讨论的低能模型理论。

英文摘要:

The bandstructure of the prototypical charge-transfer insulator NiO is computed by using a combination of an {\it ab initio} bandstructure method and the dynamical mean-field theory with a quantum Monte-Carlo impurity solver. Employing a Hamiltonian which includes both Ni-d and O-p orbitals we find excellent agreement with the energy bands determined from angle-resolved photoemission spectroscopy. This solves a long-standing problem in solid state theory. Most notably we obtain the low-energy Zhang-Rice bands with strongly k-dependent orbital character discussed previously in the context of low-energy model theories.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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