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arXiv 1408.6458cond-mat.str-el
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莫特绝缘体GaV4S8和GaTa4Se8的局域Wannier轨道基

Localised Wannier orbital basis for the Mott insulators GaV4S8 and GaTa4Se8

A. Camjayi, R. Weht, M. J. Rozenberg

摘要:

本文研究了硫属化合物AM_4X_8(A={Ga,Ge},M={V,Nb,Ta,Mo},X={S,Se})中的两个远亲GaV_4S_8(GVS)和GaTaSe_8(GTS)的电子性质。虽然所有这些化合物都是莫特绝缘体,但它们的基态显示出许多类型的磁序,其中GVS是铁磁性的,而GTS是非磁性的。基于它们的能带结构,用密度泛函理论方法计算,我们计算了一个有效的紧束缚哈密顿量在一个局域化的Wannier基组,为每一个的两个化合物。定域轨道提供了一个非常精确的能带结构表示,跳跃幅度随着距离的增加而迅速减小。我们估计的超交换相互作用,并表明库仑排斥与Hund的耦合可以解释不同的基态中观察到的GVS和GTS。我们的本地化Wannier基础提供了一个起点,现实的动态平均场论研究强相关效应,在这个家庭的化合物。

英文摘要:

We study the electronic properties of GaV4S8 (GVS) and GaTaSe8 (GTS), two distant members within the large family of chalcogenides AM4X8, with A={Ga, Ge}, M={V, Nb, Ta, Mo} and X={S, Se}. While all these compounds are Mott insulators, their ground state show many types of magnetic order, with GVS being ferromagnetic and GTS non-magnetic. Based on their bandstructures, calculated with Density Functional Theory methods, we compute an effective tight binding Hamiltonian in a localised Wannier basis set, for each one of the two compounds. The localised orbitals provide a very accurate representation of the bandstructure, with hopping amplitudes that rapidly decrease with distance. We estimate the super-exchange interactions and show that the Coulomb repulsion with the Hund's coupling may account the for the different ground states observed in GVS and GTS. Our localised Wannier basis provides a starting point for realistic Dynamical Mean Field Theory studies of strong correlation effects in this family compounds.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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