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arXiv quant-ph/0506226quant-ph
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含光子晶体的三能级模型中纠缠的定性研究

Qualitative aspects of the entanglement in the three-level model with photonic crystals

Mahmoud Abdel-Aty

摘要:

本文探讨了在三能级系统中,当存在光子晶体时,在复合态中的量子纠缠问题可以用并发和相熵方法来解决。提出了一种适用于任意三能级系统的光子带隙解析方法。利用这个解析解,我们最终计算了纠缠度和相熵,特别关注纠缠现象。具体来说,我们使用并发作为一个衡量的纠缠位于两个半无限的一维周期性光子晶体,平面腔激光器结构的情况下,在薄板区域的偶极发射器。这里考虑的制度的一个特点是,封闭形式的时间演化的评估可以进行失谐和光子带隙的存在下,这提供了洞察原子场耦合,模式频率和不同的腔参数的并发函数的性质的差异。我们演示了如何波动的相位和数量熵的存在下的光子带隙的影响。结果示出了数值模拟应用到GaAs。最后,我们将所得到的结果与任何三能级系统的纠缠成本可以计算的实例。潜在的固态系统中的实验观察进行了讨论,发现是有前途的。

英文摘要:

This communication is an enquiry into the circumstances under which concurrence and phase entropy methods can give an answer to the question of quantum entanglement in the composite state when the photonic band gap is exhibited by the presence of photonic crystals in a three-level system. An analytic approach is proposed for any three-level system in the presence of photonic band gap. Using this analytic solution, we conclusively calculate the concurrence and phase entropy, focusing particularly on the entanglement phenomena. Specifically, we use concurrence as a measure of entanglement for dipole emitters situated in the thin slab region between two semi-infinite one-dimensionally periodic photonic crystals, a situation reminiscent of planar cavity laser structures. One feature of the regime considered here is that closed-form evaluation of the time evolution may be carried out in the presence of the detuning and the photonic band gap, which provides insight into the difference in the nature of the concurrence function for atom-field coupling, mode frequency and different cavity parameters. We demonstrate how fluctuations in the phase and number entropies effected by the presence of the photonic-band-gap. The outcomes are illustrated with numerical simulations applied to GaAs. Finally, we relate the obtained results to instances of any three-level system for which the entanglement cost can be calculated. Potential experimental observations in solid-state systems are discussed and found to be promising.

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