Spontaneous Relaxation of a Charge Qubit under Electrical Measurement

Spontaneous emission in a silicon charge qubit

The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge state's response to non-adiabatic driving of its excited state population. The charge distribution is sensed remotely in the weak measurement regime. We extract emission rates down to kHz frequencies by measuring the variation of the non-equilibrium charge occupancy as a function of amplitude and dwell ti…

Controlling spin relaxation with a cavity

Spontaneous emission of radiation is one of the fundamental mechanisms by which an excited quantum system returns to equilibrium. For spins, however, spontaneous emission is generally negligible compared to other non-radiative relaxation processes because of the weak coupling between the magnetic dipole and the electromagnetic field. In 1946, Purcell realized that the spontaneous emission rate can be strongly enhanced by placing the quantum system in a resonant cavity -an effect which has since been used extensively to control the lifetime of atoms and semiconducting heterostructures coupled t…

Electrical suppression of spin relaxation in GaAs(111)B Quantum Wells

Spin dephasing via the spin-orbit interaction (SOI) is a major mechanism limiting the electron spin lifetime in III-V zincblende quantum wells. The dephasing can be suppressed in GaAs(111) quantum wells by applying an electric field. The suppression has been attributed to the compensation of the intrinsic SOI associated by the bulk inversion asymmetry (BIA) of the GaAs lattice by a structural induced asymmetry (SIA) SOI term induced by an electric field. We provide direct experimental evidence for this mechanism by demonstrating the transition between the BIA-dominated to a SIA-dominated regim…

铝约瑟夫森结在室温下的电学后制备调谐

Electrical post-fabrication tuning of aluminum Josephson junctions at room temperature

通过电压脉冲在室温下可控地增加铝约瑟夫森结电阻并调节约瑟夫森能量，实现高达270%的电阻增加，对应量子比特频率降低近2 GHz，有助于缓解量子处理器中的频率拥挤问题。

Broadband Filters for Abatement of Spontaneous Emission in Circuit Quantum Electrodynamics

The ability to perform fast, high-fidelity readout of quantum bits (qubits) is essential to the goal of building a quantum computer. However, coupling a fast measurement channel to a superconducting qubit typically also speeds up its relaxation via spontaneous emission. Here we use impedance engineering to design a filter by which photons may easily leave the resonator at the cavity frequency but not at the qubit frequency. We implement this broadband filter in both an on-chip and off-chip configuration.

Near-field relaxation of a quantum emitter to 2D semiconductors: surface dissipation and exciton polaritons

The total spontaneous emission rate of a quantum emitter in the presence of an infinite MoS\textsubscript{2} monolayer is enhanced by several orders of magnitude, compared to its free-space value, due to the excitation of surface exciton polariton modes and lossy modes. The spectral and distance dependence of the spontaneous emission rate are analyzed and the lossy-surface-wave, surface exciton polariton mode and radiative contributions are identified. The transverse magnetic and transverse electric exciton polariton modes can be excited for different emission frequencies of the quantum emitte…