一种新型集成偏置电阻的交流耦合GaAs微带检波器
AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors
摘要：
在3“基片上制作了集成耦合电容和偏置电阻的全尺寸单面GaAs微带探测器。用PECVD淀积的SiO_2和SiO_2/Si_3N_4层分别提供32.5pF/cm和61.6pF/cm的耦合电容。电阻器是由溅射金属陶瓷使用简单的电梯技术。薄层电阻率为78 kOhm/sq。电阻的热系数小于4 × 10 ^-3 /℃，满足了小面积偏置电阻的要求，工作温度范围宽。
英文摘要：
Full size single-sided GaAs microstrip detectors with integrated coupling capacitors and bias resistors have been fabricated on 3'' substrate wafers. PECVD deposited SiO_2 and SiO_2/Si_3N_4 layers were used to provide coupling capacitaces of 32.5 pF/cm and 61.6 pF/cm, respectively. The resistors are made of sputtered CERMET using simple lift of technique. The sheet resistivity of 78 kOhm/sq. and the thermal coefficient of resistance of less than 4x10^-3 / degree C satisfy the demands of small area biasing resistors, working on a wide temperature range.
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