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arXiv physics/0411185physics.ins-det
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用于Cd(Zn)Te光谱成像系统的IDeF-X ASIC

IDeF-X ASIC for Cd(Zn)Te spectro-imaging systems

O. Limousin, O. Gevin, F. Lugiez, R. Chipaux, E. Delagnes, B. Dirks, B. Horeau

摘要:

在Cd(Zn)Te探测器、微电子和互连技术方面的联合进展为新一代能量范围从1到1000 keV的物理和天体物理应用仪器开辟了道路。即使在-20至20摄氏度之间工作,这些仪器也将提供高空间分辨率(像素大小从300 x 300平方微米到几平方毫米),高光谱响应和高检测效率。为了实现这些目标,可靠、高度集成、低噪声和低功耗的电子设备是必不可少的。我们的团队目前正在开发一种新的ASIC探测器前端,名为IDEF-X,用于基于Cd(Zn)Te探测器的模块化光谱成像系统。我们在这里介绍的第一个版本的IDEF-X,其中包括一组10个低噪声电荷敏感前置放大器(CSA)。它已处理与标准AMS 0.35微米CMOS技术。CSA被设计为DC耦合到在室温下具有低暗电流的检测器。所实现的各种斩波器针对0.5至30 pF的检测器电容进行了优化。

英文摘要:

Joint progresses in Cd(Zn)Te detectors, microelectronics and interconnection technologies open the way for a new generation of instruments for physics and astrophysics applications in the energy range from 1 to 1000 keV. Even working between -20 and 20 degrees Celsius, these instruments will offer high spatial resolution (pixel size ranging from 300 x 300 square micrometers to few square millimeters), high spectral response and high detection efficiency. To reach these goals, reliable, highly integrated, low noise and low power consumption electronics is mandatory. Our group is currently developing a new ASIC detector front-end named IDeF-X, for modular spectro-imaging system based on the use of Cd(Zn)Te detectors. We present here the first version of IDeF-X which consists in a set of ten low noise charge sensitive preamplifiers (CSA). It has been processed with the standard AMS 0.35 micrometer CMOS technology. The CSA are designed to be DC coupled to detectors having a low dark current at room temperature. The various preamps implemented are optimized for detector capacitances ranging from 0.5 up to 30 pF.

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