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arXiv physics/0409120physics.ins-det
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CVD金刚石像素探测器非均匀电荷收集的表征与建模

Characterization and Modeling of Non-Uniform Charge Collection in CVD Diamond Pixel Detectors

T. Lari, A. Oh, N. Wermes, H. Kagan, M. Keil, W. Trischuk

摘要:

在180 GeV/c π介子束流中,研究了CVD金刚石传感器象素探测器。用硅微带望远镜测量了金刚石传感器的电荷收集特性,并研究了其随径迹位置的变化规律。在与金刚石微晶尺寸相当的长度尺度上观察到不均匀性。在传感器的某些区域中,电荷漂移似乎具有平行于传感器表面的分量(即,垂直于所施加的电场),导致轨道位置和命中位置之间的系统残差大至40 $μ$ m。对多晶金刚石中的电荷漂移进行了数值模拟,计算了多晶金刚石中的电子和空穴在电极上的感应信号。模拟考虑了微晶结构、传感器上的非均匀捕获、扩散和偏振效应。这是在定性协议的数据。额外的横向电场分量是由体中电荷的非均匀捕获引起的。这为观察到的较大残差提供了很好的解释。

英文摘要:

A pixel detector with a CVD diamond sensor has been studied in a 180 GeV/c pion beam. The charge collection properties of the diamond sensor were studied as a function of the track position, which was measured with a silicon microstrip telescope. Non-uniformities were observed on a length scale comparable to the diamond crystallites size. In some regions of the sensor, the charge drift appears to have a component parallel to the sensor surface (i.e., normal to the applied electric field) resulting in systematic residuals between the track position and the hits position as large as 40 $μ$m. A numerical simulation of the charge drift in polycrystalline diamond was developed to compute the signal induced on the electrodes by the electrons and holes released by the passing particles. The simulation takes into account the crystallite structure, non-uniform trapping across the sensor, diffusion and polarization effects. It is in qualitative agreement with the data. Additional lateral electric field components result from the non-uniform trapping of charges in the bulk. These provide a good explanation for the large residuals observed.

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