离子束微机械多电极金刚石探测器的IBIC表征
IBIC characterization of an ion-beam-micromachined multi-electrode diamond detector
摘要：
深离子束光刻（DIBL）已被用于直接写入单晶金刚石中的埋石墨区，具有微米级的分辨率。针对全离子束微加工固态电离室的研制和表征，采用1.8 MeV He+离子微束扫描化学气相沉积（CVD）生长的同质外延层，制作了一种叉指电极器件。为了评估该设备的电离辐射检测性能，电荷收集效率（CCE）的地图提取从离子束感应电荷（IBIC）的测量进行探测不同的埋置微电极的安排。的CCE地图的分析允许一个详尽的评价的检测器功能，特别是个性化的不同作用所发挥的电子和空穴在形成的感应电荷脉冲。最后，埋石墨电极与传统的金属表面电极相关的检测器的性能的比较证明了作为制造过程的结果，形成覆盖埋电极的死层。
英文摘要：
Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined solid state ionization chamber, a device with interdigitated electrodes was fabricated by using a 1.8 MeV He+ ion microbeam scanning on a homoepitaxial, grown by chemical vapour deposition (CVD). In order to evaluate the ionizing-radiation-detection performance of the device, charge collection efficiency (CCE) maps were extracted from Ion Beam Induced Charge (IBIC) measurements carried out by probing different arrangements of buried microelectrodes. The analysis of the CCE maps allowed for an exhaustive evaluation of the detector features, in particular the individuation of the different role played by electrons and holes in the formation of the induced charge pulses. Finally, a comparison of the performances of the detector with buried graphitic electrodes with those relevant to conventional metallic surface electrodes evidenced the formation of a dead layer overlying the buried electrodes as a result of the fabrication process.
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