Non-Arrhenius grain growth has been observed in a range of polycrystalline materials; however, its fundamental mechanisms, particularly whether the process is thermally activated or exhibits anti-thermally activation, remain controversial. In this study, SrTiO3 was employed as a model system to systematically investigate non-Arrhenius grain growth behavior through combined experimental and theoretical approaches, utilizing a newly developed grain growth model. The results reveal that non-Arrhenius grain growth is a thermally activated process without a definitive characteristic temperature, which is primarily controlled by the interplay between temperature-dependent factors and the temperature-independent parameters such as grain size and its distribution. Moreover, during abnormal grain growth (AGG), the non-Arrhenius behavior of grain growth primarily occurs at lower temperatures and gradually transitions to Arrhenius-type behavior as the temperature increases.
Modeling the Slow Arrhenius Process (SAP) in Polymers
Michigan State University（密歇根州立大学）；Technion（以色列理工学院）；Universite libre de Bruxelles (ULB)（布鲁塞尔自由大学）；Naval Research Laboratory（海军研究实验室）；University of Milan（米兰大学）
Graph neural network prediction of temperature-dependent hydrogen diffusion and thermal conductivity tensors of tungsten containing helium bubbles and grain boundaries
Graduate School of Science and Engineering, Yamagata University（山形大学理工学研究科）；National Institute for Fusion Science（国立研究開発法人核融合科学研究所）
Grain Growth Kinetics in (Cr,Mo,Ta,V,W)C1-δ High-Entropy Carbide Ceramics
Missouri University of Science and Technology（密苏里科技大学）；Pennsylvania State University（宾夕法尼亚州立大学）；Duke University（杜克大学）；University of California, Irvine（加州大学尔湾分校）
Origin of Large Dielectric Constant with Large Remnant Polarization and Evidence of Magnetoelectric Coupling in Multiferroic La modified BiFeO3-PbTiO3 Solid Solution
Grain boundary ferromagnetism in vanadium-doped In$_2$O$_3$ thin films
室温铁磁性在In $_2$ O $_3 thin films doped with 5 at.% vanadium, prepared by pulsed laser deposition at substrate temperatures ranging from 300 to 600 $ \，^{ \circ }{ \rm C} $. X-ray absorption fine structure measurement indicated that vanadium was substitutionally dissolved in the In$ _2 $O$ _3$主晶格中观察到，从而排除了钒化合物第二相的存在。基于SQUID磁强计和磁性圆二色性的磁性测量证实了磁性在晶界处，也在晶粒中。整体磁化源于晶粒和晶界之间的竞争效应。
Temperature dependent conductivity, dielectric relaxation, electrical modulus and impedance spectroscopy of Ni substituted Na$_{3+2x}$Zr$_{2-x}$Ni$_{x}$Si$_2$PO$_{\rm 12}$
