电场诱导的聚乙炔分子拓扑相变
Electrostatically-induced topological phase transitions in polyacetylene molecules
AI总结：
本研究通过电场调控聚乙炔分子的拓扑相变，揭示了门电压对电子-电子相互作用和晶格二元化模式的影响，为纳米电子器件设计提供理论依据。
摘要：
我们研究了一种线性反式聚乙炔（tPA）分子通过电容耦合到外部门电压$V_g$（宽度$d$）的电子性质。我们使用Takayama-Lin-Liu-Maki（TLM）模型在连续域中描述该系统，并在Abelian玻色化形式主义框架内分析它，这使我们能够处理电子和晶格自由度，并纳入电子之间的排斥库仑相互作用的影响。描述tPA分子的同时电子电荷密度场和晶格二元化场的全局基态被证明由修改后的正弦-戈登方程的多kink解组成，该方程受$V_g$、宽度$d$和编码电子-电子相互作用强度的Luttinger参数$K$控制。这些解属于由整数不变量$q$标记的不同拓扑领域，同时量化了束缚电荷和在门控区域诱导的二元化模式中的域墙数量。增加$V_g$驱动了一系列拓扑相变，其特征是$q$的突然变化。我们进一步研究了排斥库仑相互作用对由此产生的拓扑相图的影响，最后讨论了我们的发现对基于门控tPA分子的潜在纳米电子器件的相关性。
英文摘要：
We study the electronic properties of a linear trans-polyacetylene (tPA) molecule capacitively coupled to an external gate voltage $V_g$ of width $d$. We describe this system using the Takayama-Lin-Liu-Maki model, a continuum version of the Su-Schrieffer-Heeger model, and analyze it within the Abelian bosonization formalism, which allows us to treat both electronic and lattice degrees of freedom and to incorporate the effects of repulsive Coulomb interactions among electrons. The global ground state describing simultaneously the electronic charge-density field as well as the lattice dimerization field of a tPA molecule is shown to consist of multikink solutions of a modified sine-Gordon equation for the charge-density field, which is controlled by $V_g$, the width $d$, and the Luttinger parameter $K$ encoding the strength of electron-electron interactions. We show that these solutions belong to distinct topological sectors labeled by an integer invariant $q$ that simultaneously quantifies both the bound charge and the number of domain walls in the dimerization pattern induced at the gated region. Increasing $V_g$ drives a sequence of topological phase transitions characterized by abrupt changes in $q$. We further examine the effect of repulsive Coulomb interactions on the resulting topological phase diagram, and, finally, we discuss the relevance of our findings for potential nanoelectronic devices based on gated tPA molecules.
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