MOS电容器界面态密度分析的完整高-低方法
The completed High-Low method for interface state density analysis in MOS capacitors
AI总结：
本文提出一种改进的高-低频率技术，通过引入电静力学约束，解决了MOS电容器积累区界面态密度测量中的根本性限制，实现了物理一致的提取。
摘要：
金属-氧化物-半导体（MOS）电容器中的界面态密度$D_{IT}$在积累能区很少被报道。已知在积累区确定$D_{IT}$的根本障碍在于用户定义的氧化层电容$C_{OX}$的小误差。这种误差源阻止高-低频率技术报告积累$D_{IT}$，即使对于足够快的高频测量也是如此。为了解决这个问题，从已确立的理论中推导出一个仅由物理一致的$C_{OX}$满足的静电约束，从而完善了高-低框架。通过模拟n-SiC MOS结构的电容数据验证了“完善”框架的理论有效性，并展示了该方法的频率限制。这一分析进步确保了在能带边缘附近提取物理一致的$D_{IT}$，克服了MOS电容器表征中的根本限制。
英文摘要：
Interface state densities, $D_{IT}$, in metal-oxide-semiconductor (MOS) capacitors are rarely reported in the accumulation energy range. It is recognized that the determination of $D_{IT}$ in accumulation is fundamentally obscured by small inaccuracies in the user-defined oxide capacitance, $C_{OX}$. This source of error prevents the High-Low frequency technique from reporting accumulation $D_{IT}$, even for sufficiently fast high-frequency measurements. To resolve this, an electrostatic constraint that is uniquely satisfied by a physically consistent $C_{OX}$ is derived from the established theory, thereby completing the High-Low framework. The "completed" framework's theoretical validity is confirmed using simulated capacitance data for an n-SiC MOS structure, and the method's frequency limitations are demonstrated. This analytical advancement ensures a physically consistent extraction of $D_{IT}$ near the band edge, overcoming a fundamental limitation in MOS capacitor characterization.
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