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arXiv 2602.21724physics.optics
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依赖陷阱的光学激发III-V纳米线在低温下的电流抑制

Trap-dependent current suppression of optically excited III-V nanowires at cryogenic temperatures

IBM Research(IBM研究院);University of Glasgow(格拉斯哥大学);Paul Scherrer Institut(保罗谢尔研究所);École Polytechnique Fédérale de Lausanne (EPFL)(洛桑联邦理工学院)

Myriam Rihani, Cristina Martinez-Oliver, Markus A. Scherrer, Heinz Schmid, Kirsten E. Moselund, Simone Iadanza

AI总结:

本研究首次在低温下研究III-V异质结构,揭示了陷阱状态对电流的温度依赖性抑制机制,并展示了通过热或光能调控陷阱的双调制方法。

摘要:

量子技术网络的发展需要在低温和室温组件之间具有高速、低热负荷和低噪声的通信链路。在现代电信中,光互连技术通过光纤实现大容量数据传输。然而,低温光子技术仍 largely 未被探索,需要深入了解材料行为和缺陷动力学在低温下的特性。在本工作中,我们首次全面研究了在低温下(最低至5K)操作的集成III-V异质结构。使用在硅上单片生长的n-InP/i-InGaAs/p-InP/p-InGaAs堆叠结构,我们识别出一种温度依赖的电流降低机制,该机制源于陷阱状态在低于140K时变得越来越活跃。我们首次证明这些陷阱可以通过热能或光能等效激发和控制,揭示出一种双调制机制。这些发现为低温下III-V异质结构中的载流子传输和缺陷行为提供了新的见解,推动了低温光子学领域的发展,并提供了一种非破坏性方法来识别和表征集成量子和光电设备中的材料杂质。

英文摘要:

The advancement of quantum technology networks necessitates high-speed, low-thermal load, and minimal-noise communication links between cryogenic and room-temperature components. At the heart of modern telecommunication, lay optical interconnects allowing for large data transfer capabilities via optical fibers. However, cryogenic photonic technologies remain largely unexplored and require a detailed understanding of material behavior and defect dynamics at low temperatures. In this work, we present the first comprehensive study of integrated III-V heterostructures operating at cryogenic temperatures down to 5K. Using an integrated n-InP/i-InGaAs/p-InP/p-InGaAs stack monolithically grown on silicon, we identify a temperature-dependent current-lowering mechanism arising from trap states becoming increasingly active below 140K. We demonstrate for the first time that these traps can be equivalently excited and controlled through either thermal or optical energy, revealing a dual modulation mechanism. These findings provide new insights into carrier transport and defect behavior in III-V heterostructures at cryogenic temperatures, advancing the field of cryogenic photonics and offering a non-destructive approach for identifying and characterizing material impurities in integrated quantum and optoelectronic devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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